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    onsemi IRFM120ATF

    MOSFET N-CH 100V 2.3A SOT223-4
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    DigiKey IRFM120ATF Reel 4,000 4,000
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    IRFM120ATF Cut Tape 2,000 1
    • 1 $0.79
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    • 100 $0.477
    • 1000 $0.3392
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    Avnet Americas IRFM120ATF Reel 47 Weeks 4,000
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    IRFM120ATF Reel 47 Weeks 4,000
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    Mouser Electronics IRFM120ATF 11,840
    • 1 $0.79
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    • 100 $0.472
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    Bristol Electronics IRFM120ATF 995
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    Avnet Asia IRFM120ATF 47 Weeks 4,000
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    Ohmite Mfg Co HS50E34RFM145

    50 WATTS AL HOUSED 4 OHM 1% E3
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    DigiKey HS50E34RFM145 Bulk 186 1
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    • 1000 $5.72318
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    Master Electronics HS50E34RFM145
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    • 1000 $5.85
    • 10000 $5.55
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    Ohmite Mfg Co HS50E31RFM145

    50 WATTS AL HOUSED 1 OHM 1% E3
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    DigiKey HS50E31RFM145 Bulk 120 1
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    • 100 $9.41733
    • 1000 $6.81625
    • 10000 $5.6055
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    Ohmite Mfg Co HS50E350RFM145

    50 WATTS AL HOUSED 50 OHM 1% E3
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    DigiKey HS50E350RFM145 Bulk 120 1
    • 1 $10.59
    • 10 $10.59
    • 100 $9.26867
    • 1000 $6.70883
    • 10000 $5.51713
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    IndustrialeMart HRF-M1-G

    FOOT SWITCH 1NO IP54 PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HRF-M1-G Box 35 1
    • 1 $8.4
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    Find more RFM1 price and stock on Findchips.com

    RFM1 Datasheets (144)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFM10N12 Intersil 10.0A, 120V and 150V, 0.300 ?, N-Channel Power MOSFET FN1445.2 Original PDF
    RFM10N12 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V. Drain current RMS continuous 10A. Scan PDF
    RFM10N12 General Electric (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS Scan PDF
    RFM10N12 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM10N12 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFM10N12 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM10N12 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM10N12 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM10N12L General Electric N-channel logic level power field-effect transistor (LL FET). 120V, 10A. Scan PDF
    RFM10N12L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM10N12L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM10N15 Intersil 10.0A, 120V and 150V, 0.300 ?, N-Channel Power MOSFET FN1445.2 Original PDF
    RFM10N15 General Electric (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS Scan PDF
    RFM10N15 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Drain current RMS continuous 10A. Scan PDF
    RFM10N15 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM10N15 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFM10N15 Intersil Obsolete Product Datasheet Scan PDF
    RFM10N15 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM10N15 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM10N15L General Electric N-channel logic level power field-effect transistor (LL FET). 150V, 10A. Scan PDF
    ...

    RFM1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dv4 mosfets

    Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
    Text: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its


    Original     		PDF AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036

    Untitled

    Abstract: No abstract text available
    Text: RFM110W/RFM117W Features „ Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: y 240 to 480 MHz RFM110W y 240 to 960 MHz (RFM117W) „ OOK Modulation „ Symbol Rate: 0.5 to 30 ksps „ Output Power: -10 to +13 dBm


    Original     		PDF RFM110W/RFM117W RFM110W) RFM117W) RFM110W/RFM117W

    Untitled

    Abstract: No abstract text available
    Text: RFM12B RFM12B Universal ISM Band FSK Transceiver RFM12B DESCRIPTION Hoperf’ RFM12B is a single chip, low power, multi-channel FSK transceiver designed for use in applications requiring FCC or ETSI conformance for unlicensed use in the 433, 868 and 915 MHz bands.


    Original     		PDF RFM12BÂ RFM12B RFM12B

    tx rx module 315mhz

    Abstract: tx rx 315mhz RFM12 RFM12 B Rx module 315mhz 869MHZ 315MHZ 434MHZ tx module 315mhz SW-200
    Text: RFM12 Demo RFM12 Demo Kit User Manual HOPE MICROELECTRONICS CO.,LTD Rm B.8/F LiJingGe Emperor Regency 6012 ShenNan Rd., Shenzhen,China Tel: 86-755-82973805 Fax: 86-755-82973550 Email: sales@hoperf.com trade@hoperf.com Website: http://www.hoperf.com http://hoperf.en.alibaba.com


    Original     		PDF RFM12 RFM12 tx rx module 315mhz tx rx 315mhz RFM12 B Rx module 315mhz 869MHZ 315MHZ 434MHZ tx module 315mhz SW-200

    433mhz rx tx module

    Abstract: RFM12B-433S2P RFM12B-433S1P RFM12B RFM12B-433S2 RFM12B-868D RFM12B-433DP RFM12B-433-S1 rfm12b868s1 rfm12b-433s1
    Text: RFM12B Datasheet REV2.0 UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE RFM12B （the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12B data sheets） RFM12B


    Original     		PDF RFM12B RF12B RFM12B 433/868/915MHZ 433mhz rx tx module RFM12B-433S2P RFM12B-433S1P RFM12B-433S2 RFM12B-868D RFM12B-433DP RFM12B-433-S1 rfm12b868s1 rfm12b-433s1

    GSM repeater ic

    Abstract: DP-36 IMT-2000 cdma repeater circuit
    Text: Power Amplifier RFM1855-10 Product Features Application • Small size by using simple matching circuit board • High Efficiency • Single Supply Voltage • High Linearity, 10W Power • Heat sink 99.9% copper, gold plate • High Productivity • Low Manufacturing Cost


    Original     		PDF RFM1855-10 DP-36 IMT-2000, GSM repeater ic DP-36 IMT-2000 cdma repeater circuit

    RFM12-433-D

    Abstract: tx rx module 315mhz RFM12 CRYSTAL 433 315 mhz crystal Rx module 315mhz RFM12-868-S1 433Mhz crystal oscillator RFM124 45KHZ
    Text: RFM12 UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE RFM12 （the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12 data sheets） RFM12 General Introduction


    Original     		PDF RFM12 RFM12 315/433/868/915MHZ RFM12-433-D tx rx module 315mhz CRYSTAL 433 315 mhz crystal Rx module 315mhz RFM12-868-S1 433Mhz crystal oscillator RFM124 45KHZ

    rfm110

    Abstract: No abstract text available
    Text: RFM113W Features „ Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: 240 to 480 MHz „ OOK, FSK and GFSK Modulation „ Symbol Rate: y 0.5 to 30 ksps OOK y 0.5 to 100 ksps (FSK) „ Deviation: 1.0 to 200 kHz


    Original     		PDF RFM113W RFM113W rfm110

    RFM10N50

    Abstract: AN7254 AN7260 RFM10N45 TA17435
    Text: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,


    Original     		PDF RFM10 O204AA) RFM10N45, RFM10N50 AN7254 AN7260. RFM10N50 AN7260 RFM10N45 TA17435

    Diode Mark N10

    Abstract: RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334
    Text: [ /Title RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10 /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10


    Original     		PDF RFM18 RFP18N O204AA, O220AB) RFM18N08, RFM18N10, RFP18N08, RFP18N10 Diode Mark N10 RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334

    GSM repeater power amplifier module

    Abstract: DP-36 IMT-2000 RFM1765-10 cdma repeater circuit
    Text: Power Amplifier RFM1765-10 Product Features Application • Small size by using simple matching circuit board • High Efficiency • Single Supply Voltage • High Linearity, 10W Power • Heat sink 99.9% copper, gold plate • High Productivity • Low Manufacturing Cost


    Original     		PDF RFM1765-10 DP-36 IMT-2000, GSM repeater power amplifier module DP-36 IMT-2000 RFM1765-10 cdma repeater circuit

    RFM12U7X

    Abstract: No abstract text available
    Text: RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF RFM12U7X RFM12U7X

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


    OCR Scan     		PDF RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15

    F15N05L

    Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
    Text: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m


    OCR Scan     		PDF RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L* 92CS-38IS0 F15N05L F15N06L f15n05 f15n RFP15N06L rca application notes RCA bipolar transistors

    ta9230

    Abstract: RFM15N12 RFM15N15 RFP15N12 RFP15N15 ta9195
    Text: Standard Power MOSFETs RFM15N12, RFM15N15, RFP15N12, RFP15N15 File N u m be r 1443 N-Channel Enhancement-Mode Power Field-Effect Transistors 15 A, 120 V — 150 V rDs on : 0.15 fi Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		PDF RFM15N12, RFM15N15, RFP15N12, RFP15N15 RFM15N12 RFM15N15 RFP15N12 RFP15N15* ta9230 RFP15N15 ta9195

    RCA 467

    Abstract: TA9405 RFM10P12 transistor RCA 467 RFP10P12 TA9404 TA940 92CS-38272 RFM10P15 RFP10P15
    Text: Standard Power M O S F E Ts_ RFM10P12, RFM10P15, RFP10P12, RFP10P15 File Number 1595 P-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, -120V and -150 V rDS on = 0.5 n TE R M IN A L DIA G R A M Features: • ■ ■ •


    OCR Scan     		PDF RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V RFM10P12 RFM10P15 RFP10P12 RFP10P15* 2CS-992T3 RCA 467 TA9405 transistor RCA 467 TA9404 TA940 92CS-38272 RFP10P15

    f12n10l

    Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
    Text: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits


    OCR Scan     		PDF RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 92CS-33741 RFM12N08L RFM12N10L RFP12N08L RFP12N10L* l92CS-37213 f12n10l f12N08L F12N08L FET f12n10 f12n08 f12n "Voltage to Current Converter"

    RFM15N05

    Abstract: RFP15N05 80a ctc RFP15N06 RFM15N06
    Text: G E SOLI» STATE OIE D • 3075001 ODlfllbT 5 ■ GESS Standard Power MOSFETs ' _ RFM15N05, RFM15N06, RFP15N05, RFP15N06 File Number 1478 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF RFM15N05, RFM15N06, RFP15N05, RFP15N06 92CS-3374I RFM15N05 RFM15N06 RFP15N05 RFP15N06* 80a ctc

    f12n10l

    Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L
    Text: 3875081 G E-" S O L I D S T A T E D 1 ^ F | BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L


    OCR Scan     		PDF 01fl4Mfl RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L RFM12N08L RFM12N10L RFP12N08L RFP12N10L* f12n10l f12N08L F12N08L FET f12n10 f12n08 "Voltage to Current Converter"

    M339

    Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15
    Text: □1 DE I 3fl7SDfll DDlflim S | ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi


    OCR Scan     		PDF 3fl75Dfll RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* switchin5081" M339 transistor m339 ta9192

    CS3705

    Abstract: RFM10n50 RFM10N45
    Text: Standard Power M O S F E T s - RFM10N45, RFM10N50 File Number 1788 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 450 V - 500 V 0.6 1 N-CHANNEL ENHANCEMENT MODE fD S lo n *


    OCR Scan     		PDF RFM10N45, RFM10N50 RFM10N45 RFM10N50* 92CS-5706I AN-7254 AN-7260. 92CS-37062 J2CS-37063 92CS-37376 CS3705 RFM10n50

    TA17435

    Abstract: RFM10n50 AN7254 AN7260 RFM10N45
    Text: RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 O hm , N-Channel Power M O SFETs September 1998 Features Description • 10A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFM10N45, RFM10N50 RFM10N45 T0-204AA RFM10N45 RFM10N50 TA17435. 50BVnSS AN7254 TA17435 AN7260

    Untitled

    Abstract: No abstract text available
    Text: J W S RFM12N08, RFM12N10, RFP12N08, RFP12N10 S em iconductor October 1998 Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 TB334 AN7254 AN7260.

    RFP12N08

    Abstract: TA9284 RFM12N08 RFM12N10 RFP12N10
    Text: 3 8 7 5 0 8 1 G E S O L I D S T A T E 01 Standard Power M O S F E T s_ _ DE ,| 3Ô 7 S Ü Û 1 DOlfllSB 1 | _ RFM12N08, RFM12N10, RFP12N08, RFP12N10 File Number 1386 N-Channel Enhancement-Mode


    OCR Scan     		PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 92cs-33t4i RFM12N08 RFM12N10 RFP12N08 RFP12N10 l3fl750fll TA9284