Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RFM04U6P Search Results

    SF Impression Pixel

    RFM04U6P Price and Stock

    Toshiba America Electronic Components RFM04U6P(TE12L,F)

    RF MOSFET 6V PW-MINI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFM04U6P(TE12L,F) Cut Tape 1
    • 1 $2.71
    • 10 $2.71
    • 100 $2.71
    • 1000 $2.71
    • 10000 $2.71
    Buy Now
    RFM04U6P(TE12L,F) Digi-Reel 1
    • 1 $2.71
    • 10 $2.71
    • 100 $2.71
    • 1000 $2.71
    • 10000 $2.71
    Buy Now
    RFM04U6P(TE12L,F) Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.40167
    • 10000 $1.305
    Buy Now
    Verical RFM04U6P(TE12L,F) 431 18
    • 1 -
    • 10 -
    • 100 $1.5125
    • 1000 $1.5125
    • 10000 $1.5125
    Buy Now
    Chip1Stop RFM04U6P(TE12L,F) Cut Tape 431
    • 1 $1.93
    • 10 $1.47
    • 100 $1.21
    • 1000 $1.21
    • 10000 $1.21
    Buy Now

    Toshiba America Electronic Components RFM04U6P(TE12LF)

    TOSRFM04U6P(TE12LF) RADIO-FREQUENCY POW (Alt: RFM04U6P(TE12L,F))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia RFM04U6P(TE12LF) 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.26651
    • 10000 $1.1475
    Buy Now

    RFM04U6P Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFM04U6P Toshiba Japanese - Transistors Original PDF
    RFM04U6P Toshiba Transistors Original PDF
    RFM04U6P(TE12L,F) Toshiba RF FETs, Discrete Semiconductor Products, MOSFET N-CH PW-MINI Original PDF

    RFM04U6P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RFM04U6P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM04U6P VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original
    PDF RFM04U6P

    RFM04U6P

    Abstract: RFM04U6P datasheet MARKING 43W
    Text: RFM04U6P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM04U6P VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original
    PDF RFM04U6P RFM04U6P RFM04U6P datasheet MARKING 43W

    RFM04U6P

    Abstract: RFM04U6P datasheet
    Text: RFM04U6P 東芝電界効果トランジスタ シリコンNチャネルMOS形 RFM04U6P ○ VHF/UHF 帯電力増幅用 単位: mm ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使 用されることを意図しています。他の用途に使用することは意図もされてい


    Original
    PDF RFM04U6P SC-62 RFM04U6P RFM04U6P datasheet

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET RFM04U6P Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V, 6.0V, 7.2V 7.2V Vgs = 0.5V ~ 1.7V 0.05V Vgs = 0.5V ∼ 1.7V ( 0.05V Step


    Original
    PDF RFM04U6P 100mA, 200mA, 300mA, 400mA, 500mA, 600mA, 700mA

    Untitled

    Abstract: No abstract text available
    Text: RFM04U6P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM04U6P VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original
    PDF RFM04U6P

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original
    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


    Original
    PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original
    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


    Original
    PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


    Original
    PDF BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz

    3sk catalog

    Abstract: TE85L Toshiba
    Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS


    Original
    PDF BCE0003H 3sk catalog TE85L Toshiba

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


    Original
    PDF BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


    Original
    PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original
    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original
    PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322

    TGI7785-120L

    Abstract: TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50
    Text: 東芝半導体製品総覧表 2011 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波ダイオード 小信号 MMIC 高周波セルパック マイクロ波半導体


    Original
    PDF SCJ0004R 2SC2714 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 MT3S03A MT3S04A MT3S106 TGI7785-120L TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50