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    RFC BB 204 Search Results

    RFC BB 204 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    F2971NCGK Renesas Electronics Corporation 75 ohm SP2T Absorptive RF Switch 5MHz to 3000MHz w/ RFC Termination Visit Renesas Electronics Corporation
    F2971NCGK8 Renesas Electronics Corporation 75 ohm SP2T Absorptive RF Switch 5MHz to 3000MHz w/ RFC Termination Visit Renesas Electronics Corporation

    RFC BB 204 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504C R07DS0285EJ0700 Previous: REJ03G0836-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz


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    BB504C R07DS0285EJ0700 REJ03G0836-0600) OT-343mod) PTSP0004ZA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504C R07DS0285EJ0700 Previous: REJ03G0836-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz


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    BB504C R07DS0285EJ0700 REJ03G0836-0600) OT-343mod) PTSP0004ZA-A BB504C PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


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    BB504M R07DS0286EJ0800 REJ03G0837-0700) OT-143Rmod) PLSP0004ZA-A BB504M PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


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    BB504M R07DS0286EJ0800 REJ03G0837-0700) OT-143Rmod) PLSP0004ZA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


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    BB504M R07DS0286EJ0800 REJ03G0837-0700) OT-143Rmod) PLSP0004ZA-A PDF

    BB502C

    Abstract: C5 MARKING CODE SOT 247 rfc bb 204
    Text: BB502C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0832-0600 Previous ADE-208-810C Rev.6.00 Apr 27, 2006 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz


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    BB502C REJ03G0832-0600 ADE-208-810C) 200pF, OT-343mod) PTSP0004ZA-A BB502C C5 MARKING CODE SOT 247 rfc bb 204 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz


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    BB502C R07DS0283EJ0700 REJ03G0832-0600) 200pF, OT-343mod) PTSP0004ZA-A BB502C PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz


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    BB502M R07DS0284EJ0600 REJ03G0833-0500) 200pF, OT-143Rmod) PLSP0004ZA-A BB502M PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz


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    BB502C R07DS0283EJ0700 REJ03G0832-0600) 200pF, OT-343mod) PTSP0004ZA-A BB502C PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz


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    BB502M R07DS0284EJ0600 REJ03G0833-0500) 200pF, OT-143Rmod) PLSP0004ZA-A BB502M PDF

    RJ45 to usb convert

    Abstract: RGMII EN125 USB to ethernet bridge 27.12MHz AX88178 pulse of 4017 ax88178lf cmos 4008 Gigabit Ethernet PHY
    Text: AX88178 L USB to 10/100/1000 Gigabit Ethernet/HomePNA Controller Document No: AX88178-02/4/20/2004 Features • • • • • • • • • • Single chip USB to 10/100/1000 Gigabit Ethernet and HomePNA and HomePlug Network Controller USB specification 1.0 and 1.1 and 2.0 compliant


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    AX88178 AX88178-02/4/20/2004 10BASE-T, 100BASE-TX, 1000BASE-T) AX88178 RJ45 to usb convert RGMII EN125 USB to ethernet bridge 27.12MHz pulse of 4017 ax88178lf cmos 4008 Gigabit Ethernet PHY PDF

    RJ45 to usb convert

    Abstract: 7412 voltage regulator ASIX ELECTRONICS CORPORATION mac air i5 specs magnetic less ethernet RGMII usb rj45 converter AX88178 Gigabit Ethernet PHY EN125
    Text: AX88178 USB to 10/100/1000 Gigabit Ethernet/HomePNA Controller Document No: AX88178-07/6/21/05 Features • • • • • • • • • • Single chip USB to 10/100/1000 Gigabit Ethernet and HomePNA and HomePlug Network Controller USB specification 1.0 and 1.1 and 2.0 compliant


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    AX88178 AX88178-07/6/21/05 10BASE-T, 100BASE-TX, 1000BASE-T) RJ45 to usb convert 7412 voltage regulator ASIX ELECTRONICS CORPORATION mac air i5 specs magnetic less ethernet RGMII usb rj45 converter AX88178 Gigabit Ethernet PHY EN125 PDF

    BB506M

    Abstract: No abstract text available
    Text: BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise NF = 1.4 dB typ. (f = 900 MHz)


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    BB506M REJ03G1604-0100 OT-343mod) PLSP0004ZA-A BB506M PDF

    27.12Mhz

    Abstract: RJ45 to usb convert PIN DIAGRAM OF RJ45 to usb AX88772L Crystal 27.12MHz 10/100 BASE TRANSFORMERS LAN COMPONENTS ASIX ELECTRONICS CORPORATION mac air i5 specs AX88772 USB to ethernet bridge
    Text: AX88772 USB to 10/100 Fast Ethernet/HomePNA Controller Document No: AX88772_07/6/21/05 Features • • • • • • • • • • Single chip USB to 10/100 Fast Ethernet and HomePNA and HomePlug Network Controller Integrates on-chip 10/100Mbps Fast Ethernet PHY


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    AX88772 AX88772 10/100Mbps 10BASE-T 100BASE-TX 27.12Mhz RJ45 to usb convert PIN DIAGRAM OF RJ45 to usb AX88772L Crystal 27.12MHz 10/100 BASE TRANSFORMERS LAN COMPONENTS ASIX ELECTRONICS CORPORATION mac air i5 specs USB to ethernet bridge PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB505C R07DS0287EJ0200 Previous: REJ03G0364-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features •    Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.5 dB typ. at f = 900 MHz


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    BB505C R07DS0287EJ0200 REJ03G0364-0100) OT-343mod) PTSP0004ZA-A BB505C PDF

    RENESAS marking code package sot 89

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB505C R07DS0287EJ0200 Previous: REJ03G0364-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features •    Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.5 dB typ. at f = 900 MHz


    Original
    BB505C R07DS0287EJ0200 REJ03G0364-0100) OT-343mod) PTSP0004ZA-A BB505C RENESAS marking code package sot 89 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB506M R07DS0289EJ0200 Previous: REJ03G1604-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.  High gain PG = 24 dB typ. (f = 900 MHz)


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    BB506M OT-143mod) R07DS0289EJ0200 REJ03G1604-0100) PLSP0004ZA-A BB506M PDF

    BB506CFS

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB506C R07DS0288EJ0200 Previous: REJ03G1246-0100 Rev.2.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space.  High gain PG = 24 dB typ. (f = 900 MHz)


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    BB506C OT-343mod) R07DS0288EJ0200 REJ03G1246-0100) PTSP0004ZA-A BB506C BB506CFS PDF

    AX88772

    Abstract: EN125 0X0904
    Text: AX88772 USB to 10/100 Fast Ethernet/HomePNA Controller Document No: AX88772_10/9/15/06 Features • • • • • • • • • • Single chip USB to 10/100 Fast Ethernet and HomePNA and HomePlug Network Controller Integrates on-chip 10/100Mbps Fast Ethernet PHY


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    AX88772 AX88772 10/100Mbps 10BASE-T 100BASE-TX EN125 0X0904 PDF

    SBK160808T-110Y-S

    Abstract: AX88772 810-A0 rj45-10 USB to ethernet bridge v11424
    Text: AX88772 USB to 10/100 Fast Ethernet/HomePNA Controller Document No: AX88772_11/4/24/07 Features • • • • • • • • • • Single chip USB to 10/100 Fast Ethernet and HomePNA and HomePlug Network Controller Integrates on-chip 10/100Mbps Fast Ethernet PHY


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    AX88772 AX88772 10/100Mbps 10BASE-T 100BASE-TX XIN12M XIN25M XOUT25M XIN25M/XOUT25M SBK160808T-110Y-S 810-A0 rj45-10 USB to ethernet bridge v11424 PDF

    BB506M

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    B1030

    Abstract: high voltage swiching transistors swiching full KSC2752
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V


    OCR Scan
    KSC2752 300ns, 00bDb7M B1030 high voltage swiching transistors swiching full KSC2752 PDF

    A6S00

    Abstract: No abstract text available
    Text: BR28C16A B R 9 f iC 1 6 A 2KX8 ^ 7 h CM0S 5V EEPR0M 2K X8B it CMOS 5V EEPROM Ï O n m m r V 'li 1 • £Hë\l's£iil/Dim ensions Unit : mm BR28C16A t±, 2048 9 - K X 8 \£"j h • ij (E E P R O M ) T ' t „ 5 V J H - * iS ? * b ftl/, m*lliL%Ü:WêjA*ttzi'-r-r


    OCR Scan
    BR28C16A BR28C16A 150ns 28C16A A6S00 PDF