BB506CFS Search Results

BB506CFS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
BB506CFS		Renesas Technology	Built in Biasing Circuit MOS FET IC UHF RF Amplifier		Original	PDF

BB506CFS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BB506CFS Abstract: BB506C Text: BB506C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1246-0100 Rev.1.00 Jun. 27, 2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise NF = 1.4 dB typ. (f = 900 MHz)	Original	PDF	BB506C REJ03G1246-0100 OT-343mod) PTSP0004ZA-A BB506C BB506CFS
BB506C Abstract: No abstract text available Text: Preliminary Datasheet BB506C R07DS0288EJ0300 Rev.3.00 Jan 10, 2014 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise	Original	PDF	BB506C R07DS0288EJ0300 OT-343mod) PTSP0004ZA-A BB506C
BB506C Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
BB506CFS Abstract: No abstract text available Text: Preliminary Datasheet BB506C R07DS0288EJ0200 Previous: REJ03G1246-0100 Rev.2.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space.  High gain PG = 24 dB typ. (f = 900 MHz)	Original	PDF	BB506C OT-343mod) R07DS0288EJ0200 REJ03G1246-0100) PTSP0004ZA-A BB506C BB506CFS