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    Infineon Technologies AG IRF5803TRPBF

    MOSFET P-CH 40V 3.4A MICRO6
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    Mouser Electronics IRF5803TRPBF 20,183
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    Chip 1 Exchange IRF5803TRPBF 8,137
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    Win Source Electronics IRF5803TRPBF 240,000
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    Infineon Technologies AG IRF5801TRPBF

    MOSFET N-CH 200V 600MA MICRO6
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    DigiKey IRF5801TRPBF Reel 6,000 3,000
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    Avnet Americas IRF5801TRPBF Reel 4 Weeks 2,126
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    Mouser Electronics IRF5801TRPBF 30,542
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    Newark IRF5801TRPBF Cut Tape 6,289 5
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    IRF5801TRPBF Reel 3,000
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    Bristol Electronics IRF5801TRPBF 151,755
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    Rochester Electronics IRF5801TRPBF 15,000 1
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    IRF5801TRPBF 1,487
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    EBV Elektronik IRF5801TRPBF 12,000 11 Weeks 3,000
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    New Advantage Corporation IRF5801TRPBF 30,000 1
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    Infineon Technologies AG IRF5802TRPBF

    MOSFET N-CH 150V 900MA MICRO6
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    DigiKey IRF5802TRPBF Reel 6,000 3,000
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    Avnet Americas IRF5802TRPBF Reel 4 Weeks 1,913
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    IRF5802TRPBF Ammo Pack 5
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    IRF5802TRPBF Reel 10 Weeks 3,000
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    Mouser Electronics IRF5802TRPBF 28,345
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    EBV Elektronik IRF5802TRPBF 11 Weeks 3,000
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    New Advantage Corporation IRF5802TRPBF 42,000 1
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    Win Source Electronics IRF5802TRPBF 30,092
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    Microchip Technology Inc MRF581G

    RF TRANS NPN 18V 5GHZ MICRO X
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    DigiKey MRF581G Bulk 1,000
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    Infineon Technologies AG IRF5803D2

    MOSFET P-CH 40V 3.4A 8SO
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    RF58 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RF5824 RF Micro Devices 3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE Original PDF
    RF5824PCBA-41X RF Micro Devices 3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE Original PDF
    RF5836 RFMD RF/IF and RFID - RF Misc ICs and Modules - IC MODULE FRONT END 16QFN Original PDF

    RF58 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF5836 4.9GHz TO 5.85GHz 802.11a/n FRONT END MODULE          2 GND SW TX SW RX SP2T 12 GND 11 ANT 10 GND 9 PDET Coupler Detector PA 3 TX_IN 2fo filter GND 4 5 6 7 8 Functional Block Diagram Product Description Applications  GND


    Original
    PDF RF5836 85GHz 11a/n 16-pin, 54Mbps 65Mbps DS120402

    Untitled

    Abstract: No abstract text available
    Text: RF5840 RF5840 11b/g/n WiFi SP3T Switch 11b/g/n WiFi SP3T SWITCH Features   Low Switch Control Voltage 1.5V Minimum Low Insertion Loss 0.8dB TX_IN GND Package: QFN, 10-Pin, 1.75mm x 1.75mm x 0.5mm 10 9 C_Tx 1 8 Rx ANT 2 7 GND Vdd 3 6 Applications 


    Original
    PDF RF5840 11b/g/n RF5840 10-Pin, EEE802 RF5840:

    Untitled

    Abstract: No abstract text available
    Text: RF5840 RF5840 11b/g/n WiFi SP3T Switch 11b/g/n WiFi SP3T SWITCH Features   Low Switch Control Voltage 1.5V Minimum Low Insertion Loss 0.8dB TX_IN GND Package: QFN, 10-Pin, 1.75mm x 1.75mm x 0.5mm 10 9 C_Tx 1 8 Rx ANT 2 7 GND Vdd 3 6 Applications 


    Original
    PDF RF5840 11b/g/n 10-Pin, EEE802 RF5840 RF58425 RF5840:

    IEEE802.11a/b/g

    Abstract: RF5824 RF5824PCBA-41X transistor 11a
    Text: RF5824 Preliminary 3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE Typical Applications • IEEE802.11a/b/g and IEEE802.11n WLAN • 2.5GHz and 5GHz ISM Bands Applications • Wireless LAN Systems Applications • Single-Chip RF Power Amplifier Module • Portable Battery-Powered Equipment


    Original
    PDF RF5824 IEEE802 11a/b/g RF5824 11a/b/g, 90GHz 85GHz IEEE802.11a/b/g RF5824PCBA-41X transistor 11a

    RF5117

    Abstract: RF2163 RF5126 wlan pre RF2373 RF5163 RF5263 RF5373 RF5924 power amplifier mmic design high efficiency
    Text: Optimum Technology Matching [H GaAs HBT 25 GHz FT, 2 Micron, High Efficiency, High Dynamic Range, Low Noise, High Linearity, Single Supply Silicon BiCMOS Power Amplifiers Transceivers 25 GHz FT, 0.5 Micron, Low-Cost Process Chipsets Silicon Germanium 47 GHz FT, Bipolar RF Technology,


    Original
    PDF RF5924 11b/g/n RF5824 RF6165 RF2163 RF5163 RF5163WD RF5263 RF5263WD RF5117 RF5117 RF2163 RF5126 wlan pre RF2373 RF5163 RF5263 RF5373 RF5924 power amplifier mmic design high efficiency

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


    Original
    PDF

    Integrated Synthesizers with Mixers

    Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
    Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services


    Original
    PDF 11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers

    RFFM8800

    Abstract: qfn 48 PACKAGE footprint 5.8ghz pa RFFM8500 RFFM8504 SW SPDT FOOTPRINT RF5725 RF522 RFFM8200 RFFM8202
    Text: RFMD. Mobile Embedded WiFi Front End Products Portfolio The RFMD portfolio of single-chip integrated front end modules FEMs are designed for high-performance WiFi applications in the 2.4 to 2.5GHz and 4.9 to 5.8GHz ISM bands. These front end products are specifically


    Original
    PDF 11a/b/g/n IEEE802 RF3688 RFFM8800 RF3688 17dBm RFFM8800 qfn 48 PACKAGE footprint 5.8ghz pa RFFM8500 RFFM8504 SW SPDT FOOTPRINT RF5725 RF522 RFFM8200 RFFM8202

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    RF93

    Abstract: RF72 RF89 rf74 RF76 rf66 RF86 RF92 DRAM Controller RF68
    Text: A AP-712 APPLICATION NOTE DRAM Controller for i960 JA/JF/JD Microprocessors Paul Durazo SPG EPD 80960 Applications Engineer Intel Corporation Embedded Processor Division Mail Stop CH5-233 5000 W. Chandler Blvd. Chandler, Arizona 85226 February 9, 1995 Order Number: 272674-001


    Original
    PDF AP-712 CH5-233 74F257) RF93 RF72 RF89 rf74 RF76 rf66 RF86 RF92 DRAM Controller RF68

    K794

    Abstract: K-794 KM-66 Motorola Magnetic Mount Antenna Kit KD66N
    Text: Replacement Rooftop and Magnet Mounts Low Profile Antenna Mounts Male-Female Mounts: Model KD66 Series Heavy Duty Magnet Mount Deluxe replacement 3/4 inch 19.1 mm diameter hole mount for A/S low profile antennas. Furnished with 17 ft (5.2 m) of PRO-FLEX cable, PL-259 connector


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    PDF PL-259 ASP-921 K-350 RG-58A/U KD66N K-166 K-194 RG-58/U -166M -166T K794 K-794 KM-66 Motorola Magnetic Mount Antenna Kit KD66N

    2N5109 motorola

    Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­


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    PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application MRF931 MRF586 244A-01 MRF961 mrf517 2N5943

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    MRF580

    Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
    Text: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR RF580,A RF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.


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    PDF MRF580 MRF581 MRFC581 MRF580A, MRF581A, MRFC581A ic tms 1000 MRF580A A581 2771 17t Motorola 581

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    RF5812

    Abstract: motorola MRF5812 MRF5812 mrf5812 equivalent
    Text: MOTOROLA Order this document by RF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors RF581 RF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion


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    PDF MRF581/D MRF5812 MRF581 MRF5812R1, MRF5812 RF5812 motorola MRF5812 mrf5812 equivalent

    MRF586

    Abstract: MRF506 Motorola AR 164 MRF587 MRF587 equivalent
    Text: MOTOROL A SC XSTRS/R F *4hE D b3b?254 DDTMTTM 1 •ROTfe » E 3 5 -O S MOTOROLA ■ SEMICONDUCTOR I RF586 RF587 TECHNICAL DATA D esign er's D ata Sheet The RF Line NPN SIU C O N HIGH FREQUENCY TRANSISTORS . . . designed for use in high-gain. low-noise ultra-linear, tuned and


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    PDF MRF586 MRF587 5-10pF 15kHz MRF506 Motorola AR 164 MRF587 MRF587 equivalent

    2n5835

    Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 2n5835 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF965 low noise transistor cross motorola 2N3866 2n5160

    rf66

    Abstract: rf88 RF55 RF46 RF86 RF78 RF89 RF67
    Text: in te i AP-712 APPLICATION NOTE DRAM Controller for i960 JA/JF/JD Microprocessors February 9, 1995 Order Number: 272674-001 1-575 AP-712 1.0 INTRODUCTION This application note describes a D RAM controller for use with Intel's i960® JA/JF/JD microprocessors. Other


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    PDF AP-712 AP-712 rf66 rf88 RF55 RF46 RF86 RF78 RF89 RF67

    MSC1621

    Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
    Text: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the


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    PDF 5SMC15AT3 5SMC16AT3 5SMC18AT3 5SMC20AT3 5SMC22AT3 5SMC24AT3 5SMC27AT3 5SMC30AT3 5SMC33AT3 5SMC36AT3 MSC1621 Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931

    case 317-01

    Abstract: MRF2369 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan
    PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 case 317-01 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587

    TE 2549 MOTOROLA

    Abstract: MRF581A motorola MRF5812 RF581 MRF581
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF581 RF581A RF5812, R1, R2 NPN Silicon H igh-Frequency Transistors Designed for high current low power am plifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion •


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    PDF MRF5812 MRF581 MRF581A MRF5812, TE 2549 MOTOROLA motorola MRF5812 RF581

    MRF581A

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF581 RF581A RF5812, R1,R2 NPN Silicon High-Frequency Transistors D e signed for high current low power amplifiers up to 1.0 GHz. • Low N oise 2.0 d B @ 5 0 0 M H z • Low Intermodulation Distortion


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    PDF MRF581 MRF581A MRF5812, 56-590-65/3B