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    RF1S23N06LE Price and Stock

    Rochester Electronics LLC RF1S23N06LE

    23A, 60V, 0.065OHM, N-CHANNEL,
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    Rochester Electronics LLC RF1S23N06LESM

    N-CHANNEL POWER MOSFET
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    DigiKey RF1S23N06LESM Bulk 468
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    Rochester Electronics LLC RF1S23N06LESM9A

    N-CHANNEL POWER MOSFET
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    DigiKey RF1S23N06LESM9A Bulk 437
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    Renesas Electronics Corporation RF1S23N06LESM

    - Bulk (Alt: RF1S23N06LESM)
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    Avnet Americas RF1S23N06LESM Bulk 4 Weeks 563
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    Renesas Electronics Corporation RF1S23N06LE

    - Bulk (Alt: RF1S23N06LE)
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    RF1S23N06LE Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RF1S23N06LE Harris Semiconductor 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RF1S23N06LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S23N06LESM Harris Semiconductor 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RF1S23N06LESM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RF1S23N06LESM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RF1S23N06LESM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S23N06LESM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RF1S23N06LE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: RF1S23N06LE RF1S23N06LESM RF1S23N06LESM9A RFP23N06LE 23N06
    Text: RFP23N06LE, RF1S23N06LE, RF1S23N06LESM S E M I C O N D U C T O R 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Packaging JEDEC TO-220AB • 23A, 60V SOURCE DRAIN GATE • rDS ON = 0.065Ω • 2kV ESD Protected


    Original     		PDF RFP23N06LE, RF1S23N06LE, RF1S23N06LESM O-220AB 175oC O-262AA 1-800-4-HARRIS AN7254 RF1S23N06LE RF1S23N06LESM RF1S23N06LESM9A RFP23N06LE 23N06

    TO220-SMD

    Abstract: TO-220SMD TO220SMD NP55N06ELD STB80N06-10
    Text: H I G H T E M P E R AT U R E N C H A N N E L P O W E R M O S F E T S NP SERIES • MAXIMUM JUNCTION TEMPERATURE OF 175˚C FUNCTIONAL EQUIVALENTS • DRAIN CURRENTS FROM 10A TO 84A WITH POWER DISSIPATION UP TO 190W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 450V


    Original     		PDF BUK465-100A BUK466-100A BUK565-100A BUK7608-55 BUK7614-55 BUK7618-55 BUK7620-55 BUK7624-55 BUK7628-5 BUK7635-55 TO220-SMD TO-220SMD TO220SMD NP55N06ELD STB80N06-10

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    23N06

    Abstract: RFP23N06LE RF1S23N06LESM RF1S23N06LESM9A TB334 FP23N06L
    Text: NS ESIG : D NEW ents FOR placem D E e END le R 9P3 OMM d Possib UF7641 19S3S C E H R 4 e NOT mmend LE: see e HUF76 6 o e c s e Data Sheet N : R 23 M RFP N06LES 3 2 RF1S 23A, 60V, 0.065 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using


    Original     		PDF UF76419 FP23N06 TA49165. 23N06 RFP23N06LE RF1S23N06LESM RF1S23N06LESM9A TB334 FP23N06L

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    TIC 106 PSPICE

    Abstract: FP23N06L tic 263a FP23N06
    Text: RFP23N06LE, RF1S23N06LE, RF1S23N06LESM HARRIS S E M I C O N D U C T O R 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D E C T O -220A B • 23 A ,60V • rDS ON = 0.065i2


    OCR Scan     		PDF RFP23N06LE, RF1S23N06LE, RF1S23N06LESM -220A 065i2 -262A 99e-4 71e-12) 27e-2 73e-5) TIC 106 PSPICE FP23N06L tic 263a FP23N06

    FP23N06L

    Abstract: 23N06LE 23n06
    Text: ? *3 2 £ RFP23N06LE, RF1S23N06LE, RF1S23N06LESM 23A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs S e p te m b e r 1998 Features Description • 23A, 60V T hese are N -C hannel po w e r M O S F E T s m anufactured using the M eg aF E T process. T his process, w h ich uses feature


    OCR Scan     		PDF RFP23N06LE, RF1S23N06LE, RF1S23N06LESM TA49165. 99e-4 27e-2 73e-5) 10e-6) 33e-6) 34e-3 FP23N06L 23N06LE 23n06

    RF1S42N03L

    Abstract: No abstract text available
    Text: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM


    OCR Scan     		PDF RFD20N02SM RFD8P05SM RFD16N05SM RFD14N05SM RFD15P05SM RFD16N06SM RFD14N06SM RFD15P06SM RFD8P06ESM RFD3055SM RF1S42N03L

    mosfets

    Abstract: Power MOSFETs MOSFET ESD Rated RFD14N05L
    Text: I- — POWER MOSFETsfS LOGIC LEVEL POWER MOSFETs PAGE


    OCR Scan     		PDF RFD3055LE, RFD3055LLSM, RFP3055LE RFD3N08L, RFD3N08LSM RFD14N05L, RFD14N05LSM, RFP14N05L RFD14N06L, RFD14N06LSM, mosfets Power MOSFETs MOSFET ESD Rated RFD14N05L

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40