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    RF TRANSISTOR MPS Search Results

    RF TRANSISTOR MPS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR MPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF POWER TRANSISTOR 100MHz

    Abstract: transistor marking RF transistor case To 92
    Text: MPSH81 Central TM Semiconductor Corp. PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH81 is a PNP Silicon Transistor designed for general purpose RF amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C


    Original     		PDF MPSH81 100MHz 25-April RF POWER TRANSISTOR 100MHz transistor marking RF transistor case To 92

    MPS6543

    Abstract: MPSH11
    Text: MPS6543 C TO-92 EB NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 µA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF MPS6543 MPSH11 MPS6543

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number


    Original     		PDF MPSH10A MPSH10A MPSH10A-x-T92-B MPSH10AL-x-T92-B MPSH10AG-x-T92-B MPSH10A-x-T92-K MPSH10AL-x-T92-K MPSH10AG-x-T92-K QW-R201-065

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number


    Original     		PDF MPSH10A MPSH10A MPSH10AL-x-T92-B MPSH10AG-x-T92-B MPSH10AL-x-T92-K MPSH10AG-x-T92-K QW-R201-065

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number


    Original     		PDF MPSH10 MPSH10 MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10L-x-T92-K MPSH10G-x-T92-K QW-R201-022

    mpsh10

    Abstract: MPS-H10 MPSH10G transistor l2
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number Normal


    Original     		PDF MPSH10 MPSH10 MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10-x-T92-K MPSH10L-x-T92-K MPSH10G-x-T92-K QW-R201-022 MPS-H10 MPSH10G transistor l2

    MPSH10 datasheet

    Abstract: UTC200 MPSH10 100MHZ
    Text: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER


    Original     		PDF MPSH10 MPSH10 QW-R201-022 MPSH10 datasheet UTC200 100MHZ

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSH10 A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		PDF MPSH10 MPSH10A 1000pF 8-10pF 100pF 0-18pF

    MPSH10 datasheet

    Abstract: 100MHZ MPSH10
    Text: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER


    Original     		PDF MPSH10 MPSH10 1000pF 8-10pF 100pF 0-18pF MPSH10 datasheet 100MHZ

    transistor mark 3d

    Abstract: MMBTH81 MPSH81 3D TRANSISTOR BE SOT
    Text: MPSH81 MMBTH81 C E C TO-92 BE SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol


    Original     		PDF MPSH81 MMBTH81 OT-23 MPSH81 transistor mark 3d MMBTH81 3D TRANSISTOR BE SOT

    UTC200

    Abstract: 100MHZ MPSH10 MPSH10A
    Text: UTC MPSH10 A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		PDF MPSH10 MPSH10A QW-R201-065 UTC200 100MHZ

    CBVK741B019

    Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
    Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*


    Original     		PDF MPSH20 MMBTH20 MPSH20 OT-23 CBVK741B019 F63TNR MMBTH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20

    Untitled

    Abstract: No abstract text available
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23

    nk90

    Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 nk90 mje321 BF-133 CBVK741B019 F63TNR MMBTH81 PN2222N pnp rf transistor Bf133

    mrf226

    Abstract: Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838
    Text: Order this document by MRF226/D MRF226 The RF Line 13 W — 225 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt large-signal power am plifier applications in com m unication equipm ent operating at 225 MHz. Ideally suited


    OCR Scan     		PDF MRF226/D MRF226 MRF226/D mrf226 Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838

    MPS8001

    Abstract: MPS-U31 MPSU31 MPS8000 MPS-8000
    Text: MPS8001 SILICON NPN SILICON RF ANNULAR TRANSISTOR RF OSCILLATOR TRANSISTOR NPN SILICON . . . designed for use in Citizen-Band comm unications equipment operating to 30 MHz, with low feedback capacity for stable opera­ tion. This part is designed to be used w ith the M P S 8 0 0 0 driver and


    OCR Scan     		PDF MPS8001 MPS8000 MPS-U31 MPS8001 MPSU31 MPS-8000

    MPS-U31

    Abstract: MPSU31 MOTOROLA an-596 DOW 340 MPS8000 an-596 MPS8001 5659065-3B MPS-U31-1
    Text: MPS-U31 SILICON NPN SILICON ANNULAR 3.5 W - 27 MHz RF TRANSISTOR RF POWER OUTPUT TRANSISTOR . . . designed for use in Citizen-Band and other high-frequency com­ munications equipm ent operating to 30 M H z. Higher breakdown voltages allow a high percentage o f up-m odulation in A M circuits.


    OCR Scan     		PDF MPS-U31 MPS8000 MPS8001 AN-S96- Dow-340 0ow-340 MPS-U31 MPSU31 MOTOROLA an-596 DOW 340 an-596 5659065-3B MPS-U31-1

    mm4018

    Abstract: No abstract text available
    Text: Order this document by MM4018/D M M é lk aWmà tl%Æ!l9émÈË Æ m W m % Ê 0f * The RF Line PIMP SILICON RF POWER TRANSISTOR PIMP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator appli­ cations in military and industrial equipment. Suitable for use as


    OCR Scan     		PDF MM4018/D mm4018

    MMBR536

    Abstract: No abstract text available
    Text: 1EE § b3h72 SM MOTOROLA MOTOROLA SC QQ&75&S XSTRS/R □ I r-u-i r ' F SEM ICONDUCTOR TECHNICAL DATA MPS536 MMBR536 The RF Line PIMP Silico n High Frequency Transistor L O W N O IS E HIGH R F G A IN . this high current gain-bandwidth transistor makes an excellent RF amplifier and


    OCR Scan     		PDF b3h72 MPS536 MMBR536 OT-23 A/500 IS22I MMBR536

    MPS6543

    Abstract: MPSH11
    Text: SEMICONDUCTOR tm MPS6543 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 nA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Màximum RStiriQS


    OCR Scan     		PDF MPS6543 MPSH11 MPS6543

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR tm MPS6543 . ;^C* C< \ e TO-92 ; NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 pA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics.


    OCR Scan     		PDF MPS6543 MPSH11 PS6543

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MPS6543 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 100 |^A to 10 m A range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum RâtinÇjS


    OCR Scan     		PDF PS6543 MPS6543 MPSH11

    MPS 4355 transistor

    Abstract: MM8009 mps 0737
    Text: Order this document by MM8009/D MM8009 The RF Line 0.9 W - 1.0 G H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator applica­ tions in m ilitary and industrial equipment. Suitable for use as output,


    OCR Scan     		PDF MM8009/D MM8009 MPS 4355 transistor MM8009 mps 0737

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR tm MPSH81 MMBTH81 Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum RatinQS TA = 250C unless otherwise noted


    OCR Scan     		PDF MPSH81 MMBTH81 MPSH81