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    RF TRANSISTOR MARK CODE H1 Search Results

    RF TRANSISTOR MARK CODE H1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR MARK CODE H1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    CBVK741B019

    Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
    Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*


    Original     		PDF MPSH20 MMBTH20 MPSH20 OT-23 CBVK741B019 F63TNR MMBTH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20

    transistor j210

    Abstract: 212 t sot-23
    Text: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from


    Original     		PDF MMBFJ210 MMBFJ211 MMBFJ212 OT-23 transistor j210 212 t sot-23

    212 s sot-23

    Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
    Text: J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient


    Original     		PDF MMBFJ211 MMBFJ212 MMBFJ211 OT-23 212 s sot-23 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211

    MPSH10 fairchild transistor

    Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223

    CBVK741B019

    Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 CBVK741B019 F63TNR MMBTH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    CBVK741B019

    Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 CBVK741B019 F63TNR MMBT918 PN2222N RF 107 transistor tc 144

    mmbt918

    Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 mmbt918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch

    MPSH10 s parameters

    Abstract: No abstract text available
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 s parameters

    nk90

    Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 nk90 mje321 BF-133 CBVK741B019 F63TNR MMBTH81 PN2222N pnp rf transistor Bf133

    rf transistor mark code H1

    Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 D3000

    CBVK741B019

    Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 transistor 26

    Untitled

    Abstract: No abstract text available
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF PN5179 MMBT5179 OT-23

    Transistor J310

    Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
    Text: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.


    Original     		PDF MMBFJ309 MMBFJ310 OT-23 Transistor J310 J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note

    PN5179

    Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF PN5179 MMBT5179 OT-23 PN5179 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2

    Untitled

    Abstract: No abstract text available
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23

    6u sot-23

    Abstract: j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310 MMBFJ309
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and


    Original     		PDF MMBFJ309 MMBFJ310 MMBFJ309 OT-23 6u sot-23 j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310

    6u sot-23

    Abstract: J309 CBVK741B019 F63TNR J310 MMBFJ309 MMBFJ310 PN2222N J309-J310 UA309
    Text: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and


    Original     		PDF MMBFJ309 MMBFJ310 MMBFJ309 OT-23 6u sot-23 J309 CBVK741B019 F63TNR J310 MMBFJ310 PN2222N J309-J310 UA309

    mpsh81 model

    Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model MMBTH81 CBVK741B019 F63TNR PN2222N NE-21 BF-133

    rf transistor mark code H1

    Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
    Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH24 MMBTH24 MPSH24 OT-23 MPSH11 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH24 MPSH11 PN2222N

    CBVK741B019

    Abstract: F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
    Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH24 MMBTH24 MPSH24 OT-23 MPSH11 CBVK741B019 F63TNR MMBTH24 MPSH11 PN2222N

    erf5e

    Abstract: ERF10E ERF2E
    Text: Wirewound Resistors Thin Type Wirewound Resistors (Thin Type) Type: ERF2E, 3E, 5E, 10E (2 W, 3 W, 5 W, 10 W) These low inductance and non-flammable resistors have been developed for the applications such as protection of output transistor in AV equipment and current detection of switching power supply.


    Original     		PDF