RF TRANSISTOR MAR 8 Search Results

RF TRANSISTOR MAR 8 Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

RF TRANSISTOR MAR 8 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NPN planar RF transistor Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor	Original	BFG10; BFG10/X BFG10 NPN planar RF transistor BFG10 SOT143 C9 XN-71 transistor K 2937	PDF
MAR 544 MOSFET TRANSISTOR Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically	OCR Scan	4th/Mar/02 RD70HVF1 75MHz70W 520MHz50W RD70HVF1 175MHz 520MHz MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi 7386 mos transistor d 2689 MOSFET 2095 transistor	PDF
tsmc 0.18um Abstract: ccii CCII APPLICATION current conveyors APP4198 tsmc 0.18um CMOS transistor TSMC 0.18um Process parameters current conveyor AN4198 electrical impedance tomography Text: Maxim > App Notes > ASICs COMMUNICATIONS CIRCUITS MISCELLANEOUS CIRCUITS Keywords: current conveyor, current feedback, operational amplifier, ideal transistor, higher-bandwidth, CCI, RF Mixers, High-Frequency Precision Rectifiers, source follower Mar 27, 2008	Original	com/an4198 MAX4112: MAX477: AN4198, APP4198, Appnote4198, tsmc 0.18um ccii CCII APPLICATION current conveyors APP4198 tsmc 0.18um CMOS transistor TSMC 0.18um Process parameters current conveyor AN4198 electrical impedance tomography	PDF
MARKING T79 Abstract: transistor marking T79 ghz Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5508 / NE662M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES •	Original	2SC5508 NE662M04 R09DS0055EJ0200 R09DS0055EJ0200 MARKING T79 transistor marking T79 ghz	PDF
Untitled Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5509 / NE663M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04	Original	2SC5509 NE663M04 R09DS0056EJ0300 2SC5509 2SC5509-A 2SC5509-T2 2SC5509-T R09DS0056EJ0300	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for low-noise, high-gain amplification applications	Original	2SC5508 R09DS0055EJ0200 2SC5508-A 2SC5508-T2 2SC5508-T2-A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for medium output power amplification	Original	2SC5509 R09DS0056EJ0300 2SC5509-A 2SC5509-T2 2SC5509-T2-A	PDF
POWER MINIMOLD marking code renesas Abstract: NESG340033-A NESG340033 Text: PreliminaryData Sheet NESG340033 R09DS0016EJ0100 Rev.1.00 Mar 29, 2011 NPN Silicon Germanium RF Transistor DESCRIPTION The NESG340033 is an ideal choice for low noise, low distortion amplification. FEATURES • • • • • • • NF = 0.65 dB TYP. @ VCE = 3.3 V, IC = 15 mA, f = 1 GHz	Original	NESG340033 NESG340033 R09DS0016EJ0100 POWER MINIMOLD marking code renesas NESG340033-A	PDF
transistor marking code H11S Abstract: H11S RA05H8693M RA05H8693M-101 marking CODE H11S Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range. The battery can be connected directly to the drain of the	Original	RA05H8693M 866-928MHz RA05H8693M 928MHz transistor marking code H11S H11S RA05H8693M-101 marking CODE H11S	PDF
philips ferroxcube 4c6 Abstract: ferroxcube toroid philips toroid 4c6 ferroxcube 4C6 toroid core Philips Components, Soft Ferrites Data Handbook M BLF175 ferroxcube 31 toroid core 4C6 toroid Philips Components, Soft Ferrites Data Handbook soft ferrites philips handbook Text: APPLICATION NOTE A linear amplifier 1.6 − 28 MHz for 8 W PEP in class-A with the BLF175 NCO8705 Philips Semiconductors A linear amplifier (1.6 − 28 MHz) for 8 W PEP in class-A with the BLF175 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 GENERAL CONSIDERATIONS	Original	BLF175 NCO8705 SCA57 philips ferroxcube 4c6 ferroxcube toroid philips toroid 4c6 ferroxcube 4C6 toroid core Philips Components, Soft Ferrites Data Handbook M BLF175 ferroxcube 31 toroid core 4C6 toroid Philips Components, Soft Ferrites Data Handbook soft ferrites philips handbook	PDF
transistor t07 Abstract: mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 MRC050 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain NPN transistor in a plastic SOT416 SC-75 package. • Low noise figure • High transition frequency • Gold metallization ensures	OCR Scan	BFQ67T OT416 SC-75) OT416. 1BFQ67T MRC050 7110fl5b transistor t07 mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz	PDF
BFP620F Abstract: BFP640 schematic diagram CORDLESS DRILL BFP620 applications note TRANSISTOR40GHZ AN082 amplifier TRANSISTOR 12 GHZ BFP650 BFP690 5703 infineon Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 8 2 A L o w - C o s t, T w o - S t a g e L o w N o i s e A m p l i fi e r f o r 5 - 6 GHz Applications Using the SiliconGermanium BFP640 Transistor R F & P r o t e c ti o n D e v i c e s	Original	BFP640 BFP620F schematic diagram CORDLESS DRILL BFP620 applications note TRANSISTOR40GHZ AN082 amplifier TRANSISTOR 12 GHZ BFP650 BFP690 5703 infineon	PDF
RF transistor marking IN SOT-89 Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89 Text: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150	Original	TSB1424 OT-89 OT-23 -100mA TSD2150 TSB1424CY TSB1424CX RF transistor marking IN SOT-89 RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89	PDF
RF Power transistor Abstract: TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132 Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 2 RF power transistors characteristics RF POWER TRANSISTOR CHARACTERISTICS 2.1 This section describes how to interpret and use the data published by Philips Semiconductors on its transmitting	Original	BLV59, BLV59 RF Power transistor TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132	PDF

MAR 618 transistor Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz	Original	RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-th MAR 618 transistor MAR 737 transistor d 1557 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231	PDF
MAR 618 transistor Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz	Original	RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFth MAR 618 transistor MAR 737 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET	PDF
bc337 TRANSISTOR equivalent Abstract: TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103 Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT10 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin, dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	BLT10 OT103 MSB037 OT103. 711002b bc337 TRANSISTOR equivalent TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103	PDF
RD16HHF1 Abstract: RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1th RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8	PDF
rf transistor mar 8 Abstract: npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT1Q3 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	BLT11 OT103. 711DflEL rf transistor mar 8 npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips	PDF
MAR 703 MOSFET TRANSISTOR Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz	Original	RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 MAR 703 MOSFET TRANSISTOR RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346	PDF
MRC039 Abstract: ST MRC039 transistor Gigahertz BFQ67T SC-75 MRC041 mrc043 "marking Code" V2 Marking code V2 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 06 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain	Original	M3D173 BFQ67T OT416 SC-75) MBK090 603508/02/pp12 MRC039 ST MRC039 transistor Gigahertz BFQ67T SC-75 MRC041 mrc043 "marking Code" V2 Marking code V2	PDF
npn C 1740 Abstract: transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103 Text: Philips Semiconductors Product specification NPN 2 G H z RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	BLT11 7110flEb 0CH3034 npn C 1740 transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103	PDF
Untitled Abstract: No abstract text available Text: G1422 Global Mixed-mode Technology Inc. 2W Stereo Audio Amplifier Features General Description Depop Circuitry Integrated Output Power at 1% THD+N, VDD=5V -2W/CH typical into a 4Ω Load -1.2W/CH (typical) into a 8Ω Load Bridge-Tied Load (BTL), Single-Ended (SE)	Original	G1422 20-Pin G1422 20pin TSSOP-20	PDF
MLC850 Abstract: equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR Text: Product specification Philips Semiconductors NPN 2 G H z R F pow er transisto r BFG11 ; BFG 11/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. • High efficiency	OCR Scan	BFG11 BFG11/X OT143 BFG11 BFG11/X OT143. 711DflSb MLC850 equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR	PDF

RF TRANSISTOR MAR 8 Search Results

RF TRANSISTOR MAR 8 Result Highlights (5)

RF TRANSISTOR MAR 8 Datasheets Context Search

NPN planar RF transistor

MAR 544 MOSFET TRANSISTOR

tsmc 0.18um

MARKING T79

Untitled

Untitled

Untitled

POWER MINIMOLD marking code renesas

transistor marking code H11S

philips ferroxcube 4c6

transistor t07

BFP620F

RF transistor marking IN SOT-89

RF Power transistor

MAR 618 transistor

MAR 618 transistor

bc337 TRANSISTOR equivalent

RD16HHF1

rf transistor mar 8

MAR 703 MOSFET TRANSISTOR

MRC039

npn C 1740

Untitled

MLC850