Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF TRANSISTOR APPLICATION NOTE NXP Search Results

    RF TRANSISTOR APPLICATION NOTE NXP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR APPLICATION NOTE NXP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN10896

    Abstract: No abstract text available
    Text: AN10896 Mounting and Soldering of RF transistors Rev. 2 — 13 Nov 2012 Application note Document information Info Content Keywords Surface mount, reflow soldering, bolt down Abstract This application note provides bolt down and soldering guidelines for NXP’s RF transistor packages


    Original     		PDF AN10896 AN10896

    AN10896

    Abstract: finger print sensor pcb with circuit Mounting and Soldering of RF transistors heller 1700 ipc 610D JEDEC J-STD-020d Moisture/Reflow sensitivity HVQFN48 J-STD-020D bga rework graphite thermal spreader
    Text: AN10896 Mounting and Soldering of RF transistors Rev. 01 — 17 May 2010 Application note Document information Info Content Keywords Surface mount, reflow soldering, bolt down Abstract This application note provides bolt down and soldering guidelines for NXP’s RF transistor packages


    Original     		PDF AN10896 AN10896 finger print sensor pcb with circuit Mounting and Soldering of RF transistors heller 1700 ipc 610D JEDEC J-STD-020d Moisture/Reflow sensitivity HVQFN48 J-STD-020D bga rework graphite thermal spreader

    CRCW08050R0FKEA

    Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
    Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P


    Original     		PDF AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222

    jrc 78L08

    Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
    Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN


    Original     		PDF AN10923 BLF6G15L-250PBRN BLF6G15L-250PBRN jrc 78L08 RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08

    FR10300N0200J

    Abstract: UT-085 BLF645 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M
    Text: AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Rev. 1 — 3 March 2011 Application note Document information Info Content Keywords BLF645, broadband Abstract The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications from HF to 1.4 GHz. This


    Original     		PDF AN10953 BLF645 BLF645, FR10300N0200J UT-085 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M

    MFRC52x

    Abstract: AN166510 - Amplifier antenna matching calculation RFSim99 antenna matching 13,56 mhz calculation AN10893 13.56MHZ RFID nxp nxp proximity antenna design antenna matching calculation NXP antenna design guide 13.56 power amplifier nxp
    Text: AN10893 RF Amplifier for NXP contactless MFRC52x Rev. 1.0 — 4 November 2009 182010 Application note PUBLIC Document information Info Content Keywords RFID, Antenna Design, RF Amplifier, Antenna Matching, contactless reader Abstract This application notes provides guidance on antenna and RF amplifier


    Original     		PDF AN10893 MFRC52x MFRC52x. AN10893 MFRC52x AN166510 - Amplifier antenna matching calculation RFSim99 antenna matching 13,56 mhz calculation 13.56MHZ RFID nxp nxp proximity antenna design antenna matching calculation NXP antenna design guide 13.56 power amplifier nxp

    RFSim99

    Abstract: nfc antenna design guide nfc antenna nfc pcb antenna AN166510 nfc antenna design AN166510 - Amplifier antenna matching calculation AN142522 nxp nfc nfc antenna matching
    Text: AN142522 RF Amplifier for NXP Contactless NFC Reader IC's Rev. 2.2 — 25 November 2008 Application note Document information Info Content Keywords RFID, Antenna Design, RF Amplifier, Antenna Matching, contactless reader, NFC Abstract This application notes provides guidance on antenna and RF amplifier


    Original     		PDF AN142522 MFRC52x. RFSim99 nfc antenna design guide nfc antenna nfc pcb antenna AN166510 nfc antenna design AN166510 - Amplifier antenna matching calculation AN142522 nxp nfc nfc antenna matching

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin


    Original     		PDF BFG10W/X OT343N MBK523 R77/01/pp11

    BC548 TRANSISTOR REPLACEMENT

    Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin


    Original     		PDF BFG10W/X OT343N MBK523 R77/01/pp11 BC548 TRANSISTOR REPLACEMENT transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431

    MGM219

    Abstract: 9335 895 BC817 BFG21W DCS1800 MGM224
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN  High efficiency


    Original     		PDF M3D124 BFG21W DCS1800, R77/03/pp11 MGM219 9335 895 BC817 BFG21W DCS1800 MGM224

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN  High efficiency


    Original     		PDF M3D124 BFG21W DCS1800, R77/03/pp11

    Untitled

    Abstract: No abstract text available
    Text: AN11102 BFU725F/N1 2.4 GHz LNA evaluation board Rev. 1 — 28 July 2011 Application note Document information Info Content Keywords LNA, 2.4GHz, BFU725F/N1 Abstract This document explains the BFU725F/N1 2.4GHz LNA evaluation Board. AN11102 NXP Semiconductors


    Original     		PDF AN11102 BFU725F/N1 BFU725F/N1 AN111.

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    BD228

    Abstract: BFG10 transistor K 2937
    Text: BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BFG10; BFG10/X BFG10X BD228 BFG10 transistor K 2937

    Untitled

    Abstract: No abstract text available
    Text: BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BFG10; BFG10/X BFG10X

    BFG480W

    Abstract: 1184 transistor analog transistor B 1184
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION


    Original     		PDF M3D124 BFG480W MSB842 R77/03/pp16 BFG480W 1184 transistor analog transistor B 1184

    BFG480W

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION


    Original     		PDF M3D124 BFG480W MSB842 R77/03/pp16 BFG480W

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Wideband Doherty cuts Energy Consumption in Half By Jawad Qureshi, Walter Sneijers, Korne Vennema and Mark Murphy – NXP Semiconductors Introduction The great advantage of the broadband solution is TV transmitter manufacturers are facing the challenge


    Original     		PDF

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578