Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF POWER TRANSISTOR NPN 2SC1971 Search Results

    RF POWER TRANSISTOR NPN 2SC1971 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER TRANSISTOR NPN 2SC1971 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC1971

    Abstract: transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor
    Text: 2SC1971 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • PACKAGE STYLE TO-220AB COMMON EMITTER Replaces Original 2SC1971 in Most Applications


    Original
    2SC1971 2SC1971 O-220AB O-220CE transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor PDF

    transistor 2sc1971

    Abstract: 2SC1971 2Sc1971 transistor "RF Power Amplifiers" RF POWER TRANSISTOR NPN 2sc1971 RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN vhf vhf power transistor 2SC19 2SC197
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION •High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications.


    Original
    2SC1971 175MHz, 175MHz transistor 2sc1971 2SC1971 2Sc1971 transistor "RF Power Amplifiers" RF POWER TRANSISTOR NPN 2sc1971 RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN vhf vhf power transistor 2SC19 2SC197 PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original
    MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    2SC1971

    Abstract: RF POWER TRANSISTOR NPN 2sc1971 equivalent transistor 1204 transistor 2sc1971 2Sc1971 transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1971 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. Dimensions i 0 3.6 ± 0.2 9.1 ± 0.7


    OCR Scan
    2SC1971 2SC1971 175MHz O-220 175MHz. 175MHz 175MH2 RF POWER TRANSISTOR NPN 2sc1971 equivalent transistor 1204 transistor 2sc1971 2Sc1971 transistor PDF

    2sc1971

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAW ING 2 S C 1 9 7 1 is a silicon N P N epitaxial planar type transistor designed D im e nsions in mm for R F power amplifiers on V H F band m obile radio applications.


    OCR Scan
    2SC1971 2SC1971 7001k PDF

    2SC1971

    Abstract: transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor 2sc1971 application note NJ100 33MF RF POWER TRANSISTOR transistor 6w N50q
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 1971 is a silicon N PN epitaxial planar ty p e transistor designed Dimensions in mm fo r R F pow er am plifiers on V H F band m obile radio applications.


    OCR Scan
    2SC1971 2SC1971 175MHz T0-220 175MHz. T-30E 175MH2 transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor 2sc1971 application note NJ100 33MF RF POWER TRANSISTOR transistor 6w N50q PDF

    TO220 RF POWER TRANSISTOR NPN

    Abstract: 2SC1971 transistor 2sc1971 175MH2 RF POWER TRANSISTOR NPN 175MHZ 15 w RF POWER TRANSISTOR NPN Scans-0015450
    Text: M ITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION O U T LIN E DRAW ING 2SC 1971 is a s ilic o n N PN e p ita x ia l p la n a r ty p e tra n s is to r designed f o r R F p o w e r a m p lifie rs o n V H F b a n d m o b ile ra d io a p p lic a tio n s .


    OCR Scan
    2SC1971 2SC1971 TO220 RF POWER TRANSISTOR NPN transistor 2sc1971 175MH2 RF POWER TRANSISTOR NPN 175MHZ 15 w RF POWER TRANSISTOR NPN Scans-0015450 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan
    PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan
    1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF