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    RF POWER TRANSISTOR NPN, MOTOROLA Search Results

    RF POWER TRANSISTOR NPN, MOTOROLA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER TRANSISTOR NPN, MOTOROLA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    Abstract: 2.4 ghz transmitter rf test
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR


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    MRF16006 MRF16006 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test PDF

    2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR


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    MRF16030 MRF16030 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz" PDF

    BD135

    Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics


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    MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 PDF

    MRF262

    Abstract: MRF264 MRF260 MRF261
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF261 The RF Line 10W 136 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 Volt VHF large-signal power am plifier appli­ cations in commercial and industrial equipment. NPN SILICO N


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    MRF261 O-220AB MRF260 MRF262 MRF264 MRF261 PDF

    56590653B

    Abstract: BH Rf transistor
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON


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    56-590-65/3B MRF492 56590653B BH Rf transistor PDF

    Motorola transistors MRF455

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —


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    iF/15 VK200-20/4B, 56-590-65/3B MRF455 Motorola transistors MRF455 PDF

    inductor vk200

    Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
    Text: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.


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    MRF238 inductor vk200 VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer PDF

    si diode 1N4007

    Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON


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    MRF6414 MRF6414PHT/D MRF6414 MRF8414 si diode 1N4007 MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout PDF

    J476

    Abstract: capacitor j476 NALCO
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package


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    MRF2628 J476 capacitor j476 NALCO PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 5 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -6 0 0 M H z frequency range.


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    MRF5175 PDF

    transistor 81 110 w 63

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •


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    MRF581 transistor 81 110 w 63 PDF

    MRF227

    Abstract: MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b72S4 0£m 50fl 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF227 The RF Line 3 W - 225 MHz R F POWER TRANSISTOR NPN SILIC ON NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt large-signal power amplifier applica­


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    b3b72S4 MRF227 T0-206A O-391 MRF227 MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G PDF

    transistor motorola 114-8

    Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
    Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier


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    MRF861/D 2PHX33727Q-0 transistor motorola 114-8 MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8 PDF

    mrf226

    Abstract: Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838
    Text: Order this document by MRF226/D MRF226 The RF Line 13 W — 225 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt large-signal power am plifier applications in com m unication equipm ent operating at 225 MHz. Ideally suited


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    MRF226/D MRF226 MRF226/D mrf226 Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838 PDF

    transistor bd135

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON


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    TP3032 TP3032 BD135 transistor bd135 PDF

    MRF477

    Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
    Text: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear


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    fci3ti72S4 MRF477 T0-220AB L3b72S4 T-33-11 Pout-40WPEP MRF477 MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H PDF

    2n5642

    Abstract: 2N5642 motorola 2N5642 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •


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    2N5642 2n5642 2N5642 motorola 2N5642 equivalent PDF

    MRF449

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r power am plifier application in industrial, com ­ mercial and amateur radio equipment to 30 MHz. •


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    PDF

    MRF232

    Abstract: H546
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF232 The RF Line 7.5 W - 9 0 M Hz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON .design ed for 12.5 Volt, mid-band large-signal amplifier appli­ cations in industrial and commercial FM equipment operating in the


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    MRF232 MRF232 H546 PDF

    MRF604

    Abstract: MRF-604 MM531
    Text: MOTOROLA SC XSTRS/R F MbE D b3b?2SM 00^4004 MOTOROLA G T -3 -ä -c e . • SEMICONDUCTOR TECHNICAL DATA MRF604 The R F Line 1.0 W - 175 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR NPN SILICON . . . designed for 12.5 Volt VH F large-signal amplifier applications


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    MRF604 175MHz) MRF604 MRF-604 MM531 PDF

    3B2S

    Abstract: MRF428
    Text: M O T OR O L A SC XSTRS/R 4bE D F L,3b72S4 OOmbSD T MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF428 The RF Line 150 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N R F POWER TRANSISTOR . . . designed prim arily fo r high-voltage applications as a high-power


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    3b72S4 MRF428 T--33--13 3B2S MRF428 PDF

    TP3400

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3400 The RF Line UHF Linear Power Transistor 'C = 400 mA UHF LINEAR TRANSISTOR NPN SILICON The TP3400 is a NPN transistor gold metallized for reliability. The transition frequency of 3 GHz make this transistor a high gain — high output


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    TP3400 TP3400 PDF

    transistor 335

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 25 W P E P - 3 0 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTORS .d esigne d primarily for applications as a high-power linear amplifier from 2.0 to 75 MHz. • Specified 28 Volt. 30 M H z Characteristics —


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    MRF401 transistor 335 PDF

    transistor c 2316

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF323 The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 2 0 0 - 5 0 0 M H z frequency range. 20 W, 400 MHz RF POWER TRANSISTOR


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    MRF323 MRF323 transistor c 2316 PDF