RF POWER TRANSISTOR H2 Search Results

RF POWER TRANSISTOR H2 Result Highlights (5)

Part	Manufacturer	Description
BLF	Rochester Electronics	BLF278 - VHF Push-Pull Power VDMOS Transistor
RX1214B300YI	Rochester Electronics LLC	RX1214B300Y - Microwave Power Transistor (Ampleon Die)
BLF1043	Rochester Electronics LLC	BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die)
ON5040	Rochester Electronics LLC	ON5040 - RF Power Transistor (Ampleon Die)
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns

RF POWER TRANSISTOR H2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
H2 SOT-89 RF amplifier Abstract: GRM188R71H104KA01 sot-89 H3 uhf gp bjt START499D Text: DB-499D-470 RF power amplifier using 1 x START499D NPN RF silicon transistor Preliminary Data Features • Excellent thermal stability ■ Frequency: 430 - 470 MHz ■ Supply voltage: 3.6 V ■ Output power: 29 dBm ■ Power gain: 19 dB ■ Efficiency: 52 %	Original	DB-499D-470 START499D DB-499D-470 H2 SOT-89 RF amplifier GRM188R71H104KA01 sot-89 H3 uhf gp bjt START499D	PDF
transistor marking G9 Abstract: J4-81 j4 81 MARKING D8 Text: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package	Original	STAC3933 STAC3933 STAC177B transistor marking G9 J4-81 j4 81 MARKING D8	PDF
Untitled Abstract: No abstract text available Text: STAC4933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package	Original	STAC4933 STAC4933 STAC177B	PDF
Untitled Abstract: No abstract text available Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz	Original	PD84006-E 2002/95/EC PowerSO-10RF PD84006-E	PDF
NV SMD TRANSISTOR Abstract: AN1294 UHF rfid reader ma706 Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■	Original	PD84006-E 2002/95/EC PowerSO-10RF PD84006-E NV SMD TRANSISTOR AN1294 UHF rfid reader ma706	PDF
PD85004 Abstract: PD85004 ST 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 J-STD-020B PD84002 marking c7 sot-89 marking code murata label Text: PD85004 RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel	Original	PD85004 2002/95/EC OT-89 PD85004 PD85004 ST 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 J-STD-020B PD84002 marking c7 sot-89 marking code murata label	PDF
13786 Abstract: L1320 Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel	Original	PD84006L-E 2002/95/EC PD84006L-E 13786 L1320	PDF
mc3363 application note Abstract: CFW455 SFE10.7MS2-A j350 TRANSISTOR H1 SOT-89 transistor rf MC3357 application note MC3363DW Text: MC3363 Low Power Dual Conversion FM Receiver The MC3363 is a single chip narrowband VHF FM radio receiver. It is a dual conversion receiver with RF amplifier transistor, oscillators, mixers, quadrature detector, meter drive/carrier detect and mute circuitry. The	Original	MC3363 MC3363 mc3363 application note CFW455 SFE10.7MS2-A j350 TRANSISTOR H1 SOT-89 transistor rf MC3357 application note MC3363DW	PDF
sot89 h3 Abstract: .H2 MARKING SOT-89 marking h2 sot-89 marking .H2 sot89 PD85004 Text: PD85004 RF power transistor The LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel	Original	PD85004 2002/95/EC OT-89 PD85004 sot89 h3 .H2 MARKING SOT-89 marking h2 sot-89 marking .H2 sot89	PDF
Untitled Abstract: No abstract text available Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel	Original	PD84006L-E 2002/95/EC PD84006L-E	PDF
PD85006 Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208 Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package	Original	PD85006-E Hz/13 2002/95/EC PowerSO-10RF PD85006-E PD85006 AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208	PDF
PD85006 Abstract: PD85006-E 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package	Original	PD85006-E Hz/13 2002/95/EC PowerSO-10RF PD85006-E PD85006 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J	PDF
PD84002 Abstract: J-STD-020B 3214W-1-103E EXCELDRC35C GRM39-C0G3R3C50Z500 GRM39-X5R105K16D52K STMicroelectronics marking code date sot-89 L38L38 Text: PD84002 RF power transistor The LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 2 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel	Original	PD84002 2002/95/EC OT-89 PD84002 J-STD-020B 3214W-1-103E EXCELDRC35C GRM39-C0G3R3C50Z500 GRM39-X5R105K16D52K STMicroelectronics marking code date sot-89 L38L38	PDF
transistor NF j1 marking code Abstract: PD84006L-E EEVHB1V100P EXCELDRC35C J-STD-020B UHF rfid reader grm39 Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel	Original	PD84006L-E 2002/95/EC PD84006L-E transistor NF j1 marking code EEVHB1V100P EXCELDRC35C J-STD-020B UHF rfid reader grm39	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an	Original	MMRF1316N MMRF1316NR1	PDF
PD84002 Abstract: PD85006L-E smd transistor marking C14 SMD diode marking L39 3214W-1-103E EXCELDRC35C J-STD-020B PD85 TRANSISTOR AO SMD MARKING 0603 footprint FERRITE BEAD INDUCTOR Text: PD85006L-E RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european	Original	PD85006L-E 2002/95/EC PD85006L-E PD84002 smd transistor marking C14 SMD diode marking L39 3214W-1-103E EXCELDRC35C J-STD-020B PD85 TRANSISTOR AO SMD MARKING 0603 footprint FERRITE BEAD INDUCTOR	PDF
STAC2942 Abstract: STAC244 STAC2942B-I FERRITE TOROID R4270 Text: STAC2942B-I RF power transistor HF/VHF/UHF N-channel MOSFETs Custom data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European	Original	STAC2942B-I 2002/95/EC STAC2942B-I STAC244B STAC2942 STAC2942 STAC244 FERRITE TOROID R4270	PDF
Untitled Abstract: No abstract text available Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european	Original	SD4933 2002/95/EEC SD4933	PDF
MRF477 Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H Text: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear	OCR Scan	fci3ti72S4 MRF477 T0-220AB L3b72S4 T-33-11 Pout-40WPEP MRF477 MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H	PDF
2SC2097 Abstract: transistor 91 330 T40E Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm fo r RF power am p lifie rs in HF band m ob ile radio applications. R1	OCR Scan	2SC2097 2SC2097 30MHz 30MHz, T-40E transistor 91 330 T40E	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR □GITb'ìS =H2 2SC3630 NPN EPITAXIAL PLANAR T YPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi cally designed fo r U HF power am plifiers applications. OUTLINE DRAWING Dim ensions in mm FEATURES	OCR Scan	2SC3630 2SC3630 520MHz, 150pF, 1500pF,	PDF
TIC 136 Transistor Abstract: mrf475 tic 136 mrf475 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF475 The RF Line 12 W PEP — 12 W (CW) — 30 MHz NPN SILICON RF POWER TRANSISTOR R F POWER TRANSISTO R . . . designed prim arily for use in single sideband linear amplifier output applications in citizens band and other communications	OCR Scan	MRF475 TIC 136 Transistor mrf475 tic 136 mrf475 transistor	PDF
MRF340 Abstract: AMO 0210 transistor s97 Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE » b3b?aS4 • SEMICONDUCTOR ■■ OOTMS^ 3 ■ T -3 3 -0 5 TECHNICAL DATA MRF340 The RF Line 8W 100-150 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR N PN S IL IC O N . . .designed p rim arily for use in V H F am plifiers w ith amplitude	OCR Scan	MRF340 14bQ2 MRF340 AMO 0210 transistor s97	PDF
2N3924 Abstract: 2n3924 equivalent Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 2N3924 T h e R F Line NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . o p t i m iz e d A n n u l a r t r a n s i s t o r f o r l a r g e - s i g n a l p o w e r a m p l if i e r a n d d r iv e r a p p l i c a t i o n s t o 3 0 0 M H z .	OCR Scan	2N3924 2N3924 2n3924 equivalent	PDF

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RF POWER TRANSISTOR H2 Search Results

RF POWER TRANSISTOR H2 Result Highlights (5)

RF POWER TRANSISTOR H2 Datasheets Context Search

H2 SOT-89 RF amplifier

transistor marking G9

Untitled

Untitled

NV SMD TRANSISTOR

PD85004

13786

mc3363 application note

sot89 h3

Untitled

PD85006

PD85006

PD84002

transistor NF j1 marking code

Untitled

PD84002

STAC2942

Untitled

MRF477

2SC2097

Untitled

TIC 136 Transistor

MRF340

2N3924