RF POWER TRANSISTOR 30MHZ Search Results

RF POWER TRANSISTOR 30MHZ Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

RF POWER TRANSISTOR 30MHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
16HHF1 Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz 16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF	PDF
RD16HHF1 equivalent Abstract: RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet RD16HHF1 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1 equivalent RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING	PDF
RD16HHF1 Abstract: RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHeater RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF	PDF
RD16HHF1 Abstract: RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet	PDF
RD16HHF1 application notes Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1or RD16HHF1 application notes RD16HHF RD16HHF1-101 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE	PDF
RD16HHF1 Abstract: RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1th RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8	PDF
transistor t06 Abstract: 828 TRANSISTOR equivalent Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	RD00HHS1 30MHz RD00HHS1 30MHz 48MAX 53MAX transistor t06 828 TRANSISTOR equivalent	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain	Original	RD00HHS1 30MHz RD00HHS1 30MHz RD00HHS1-101	PDF
transistor t06 Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA Text: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	RD00HHS1 30MHz RD00HHS1 30MHz transistor t06 RD00HHS1-101 lal04na1r0 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA	PDF
RD 15 hf mitsubishi Abstract: TRANSISTOR 7533 A RD00HHS1-101 Text: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain	Original	RD00HHS1 30MHz RD00HHS1 30MHz RD00HHS1-101 Oct2011 RD 15 hf mitsubishi TRANSISTOR 7533 A	PDF
LAL04NA Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA T113 mosfet HF amplifier RD00HHS1-101 3M Touch Systems	PDF
c 879 transistor Abstract: transistor t06 TRANSISTOR 7533 mosfet HF amplifier RD00HHS1 a 933 transistor f-30MHz 933 TRANSISTOR Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1	Original	RD00HHS1 30MHz RD00HHS1 30MHz c 879 transistor transistor t06 TRANSISTOR 7533 mosfet HF amplifier a 933 transistor f-30MHz 933 TRANSISTOR	PDF
LAL04NA Abstract: RD00HHS1-101 transistor t06 DD 127 D TRANSISTOR mosfet HF amplifier RD00HHS1 S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET T06 transistor FET 355 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA RD00HHS1-101 transistor t06 DD 127 D TRANSISTOR mosfet HF amplifier S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET T06 transistor FET 355	PDF
NTE325 Abstract: No abstract text available Text: NTE325 Silicon NPN RF Power Transistor 50W @ 30MHz Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:	Original	NTE325 30MHz NTE325 30MHz. 30MHz	PDF

NTE470 Abstract: transistor npn 100w amplifier transistor npn 100w amplifier TO-3P Text: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:	Original	NTE470 NTE470 30MHz. 30MHz 150mA, 001MHz transistor npn 100w amplifier transistor npn 100w amplifier TO-3P	PDF
transistor npn 100w amplifier Abstract: rf amplifier 100w NTE470 amplifier 100w w amplifier 30mhz Text: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:	Original	NTE470 NTE470 30MHz. 30MHz 150mA, 001MHz transistor npn 100w amplifier rf amplifier 100w amplifier 100w w amplifier 30mhz	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES •	OCR Scan	2SC2097 2SC2097 30MHz 30MHz, 2k3k5k10k	PDF
NTE322 Abstract: 27mhz rf amplifier NPN transistor choke 380 Text: NTE322 Silicon NPN Transistor RF Power Output Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits.	Original	NTE322 NTE322 O202N 30MHz. 500mA 27MHz 180pF 65/3B 27mhz rf amplifier NPN transistor choke 380	PDF
RD70HHF Abstract: RD70HHF1 mosfet HF amplifier idq10 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD70HHF1 30MHz RD70HHF1 30MHz RD70HHF1-101 RD70HHF mosfet HF amplifier idq10	PDF
2SC2097 equivalent Abstract: 2sc2097 transistor 2SC2097 Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. D im ensions in m m R1 FEATURES	OCR Scan	2SC2097 2SC2097 30MHz 30MHz, 2k3k5k10k 2SC2097 equivalent transistor 2SC2097	PDF
NTE335 Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent Text: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:	Original	NTE335 NTE336 NTE335 NTE336 30MHz. 30MHz 1817pF 777pF J341 NPN 250W n-p-n r.f. power transistors J201 equivalent	PDF
RD100HHF1 Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD100HHF1 30MHz RD100HHF1 30MHz TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w	PDF
RD70HHF1 Abstract: TRANSISTOR D 1765 738 RD70HHF a 1757 transistor hf power transistor mosfet TRANSISTOR D 1765 mosfet HF amplifier rd70 MITSUBISHI RF POWER MOS FET TRANSISTOR 0931 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD70HHF1 30MHz RD70HHF1 30MHz TRANSISTOR D 1765 738 RD70HHF a 1757 transistor hf power transistor mosfet TRANSISTOR D 1765 mosfet HF amplifier rd70 MITSUBISHI RF POWER MOS FET TRANSISTOR 0931	PDF
RD16HHF1 Abstract: RD16HHF RD16HHF1 application notes RD16HHF1-101 RD16H PO-20W Text: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-101 Oct2011 RD16HHF RD16HHF1 application notes RD16H PO-20W	PDF

RF POWER TRANSISTOR 30MHZ Search Results

RF POWER TRANSISTOR 30MHZ Result Highlights (5)

RF POWER TRANSISTOR 30MHZ Datasheets Context Search

16HHF1

RD16HHF1 equivalent

RD16HHF1

RD16HHF1

RD16HHF1 application notes

RD16HHF1

transistor t06

Untitled

transistor t06

RD 15 hf mitsubishi

LAL04NA

c 879 transistor

LAL04NA

NTE325

NTE470

transistor npn 100w amplifier

Untitled

NTE322

RD70HHF

2SC2097 equivalent

NTE335

RD100HHF1

RD70HHF1

RD16HHF1