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    RF POWER TRANSISTOR 2.7 GHZ 3.1 GHZ LIST PART NUMBER Search Results

    RF POWER TRANSISTOR 2.7 GHZ 3.1 GHZ LIST PART NUMBER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER TRANSISTOR 2.7 GHZ 3.1 GHZ LIST PART NUMBER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Functional Schematic Features •         Rev. V2 GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications


    Original     		PDF MAGX-000035-09000P 14-Lead MAGX-000035-09000P

    MAGX-000035-09000P

    Abstract: No abstract text available
    Text: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Features •         GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications 50 V Typical Bias, Class AB Common-Source Configuration


    Original     		PDF MAGX-000035-09000P 14-Lead MAGX-000035-09000P

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2731MH25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2731MH25 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C


    Original     		PDF IB2731MH25 IB2731MH25 IB2731MH25-REV-NC-DS-REV-D

    Untitled

    Abstract: No abstract text available
    Text: Part Number: ILD2735M120 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET  High Power Gain  Excellent thermal stability  Gold Metal Part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 – 3.5 GHz instantaneous


    Original     		PDF ILD2735M120 ILD2735M120 300us ILD2735M120-REV-PR1-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD2731M140 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET  High Power Gain  Excellent thermal stability  Gold Metal Part number ILD2731M140 is designed for S-Band radar applications operating over the 2.7 – 3.1 GHz instantaneous


    Original     		PDF ILD2731M140 ILD2731M140 300us ILD2731M140-REV-NC-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD3135M120 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET  High Power Gain  Excellent thermal stability  Gold Metal Part number ILD3135M120 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous


    Original     		PDF ILD3135M120 ILD3135M120 300us ILD3135M120-REV-NC-DS-REV-I

    BLS2731-10

    Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-10 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 PINNING - SOT445C FEATURES • Suitable for short and medium pulse applications


    Original     		PDF M3D324 BLS2731-10 OT445C SCA60 125108/00/04/pp12 BLS2731-10 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

    s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

    Abstract: BLS2731-110 CERAMIC CAPACITOR SMD PHILIPS TRANSISTOR SMD w2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D260 BLS2731-110 Microwave power transistor Product specification Supersedes data of 1998 Jan 30 2001 Dec 05 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 FEATURES PINNING - SOT423A


    Original     		PDF M3D260 BLS2731-110 OT423A SCA73 613524/05/pp12 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ BLS2731-110 CERAMIC CAPACITOR SMD PHILIPS TRANSISTOR SMD w2

    MPAL2731M130

    Abstract: No abstract text available
    Text: Part Number: Integra MPAL2731M130 TECHNOLOGIES, INC. S-Band Radar Miniature Power Amplifier 50 Ohm Matched  Requires no external impedance matching circuitry Part number MPAL2731M130 is a miniaturized power amplifier which is internally matched to 50 ohms. It is


    Original     		PDF MPAL2731M130 MPAL2731M130 100us MPAL2731M130-REV-NC-DS-REV-B

    BLS2731-20

    Abstract: RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-20 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-20 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications


    Original     		PDF M3D324 BLS2731-20 OT445C SCA60 125108/00/04/pp8 BLS2731-20 RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number

    transistor SMD DK rc

    Abstract: transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PINNING - SOT423A FEATURES • Suitable for short and medium pulse applications


    Original     		PDF BLS2731-110 OT423A SCA57 125108/00/04/pp12 transistor SMD DK rc transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342

    8054 transistor

    Abstract: TRANSISTOR 4847 AT-41500 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


    Original     		PDF AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0077EN AV01-0438EN 8054 transistor TRANSISTOR 4847 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD3135M30 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET  High Power Gain  Excellent thermal stability  Gold Metal Part number ILD3135M30 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band.


    Original     		PDF ILD3135M30 ILD3135M30 300us ILD3135M30-REV-NC-DS-REV-D

    8054 transistor

    Abstract: TRANSISTOR 4847 TRANSISTOR c 5803 s415 RF AT-41586 chip die npn transistor at41500 AT-41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter


    Original     		PDF AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0438EN AV02-1844EN 8054 transistor TRANSISTOR 4847 TRANSISTOR c 5803 s415 RF AT-41586 chip die npn transistor at41500

    HMC416LP4

    Abstract: No abstract text available
    Text: HMC416LP4 / 416LP4E v02.0805 Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +4.5 dBm • Wireless Infrastructure Phase Noise: -114 dBc/Hz @100 k Hz • Industrial Controls No External Resonator Needed • Test Equipment Single Supply: 3V @ 37 mA


    Original     		PDF HMC416LP4 416LP4E HMC416LP4 HMC416LP4E

    Untitled

    Abstract: No abstract text available
    Text: HMC416LP4 / 416LP4E v02.0805 MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +4.5 dBm • Wireless Infrastructure Phase Noise: -114 dBc/Hz @100 k Hz • Industrial Controls No External Resonator Needed


    Original     		PDF HMC416LP4 416LP4E HMC416LP4 HMC416LP4E

    Untitled

    Abstract: No abstract text available
    Text: HMC416LP4 / 416LP4E v02.0805 MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Ampliier for: Pout: +4.5 dBm • Wireless Infrastructure Phase Noise: -114 dBc/Hz @100 k Hz • Industrial Controls No External Resonator Needed


    Original     		PDF HMC416LP4 416LP4E HMC416LP4 HMC416LP4E

    HMC416LP4

    Abstract: RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
    Text: HMC416LP4 / 416LP4E v02.0805 MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +4.5 dBm • Wireless Infrastructure Phase Noise: -114 dBc/Hz @100 k Hz • Industrial Controls No External Resonator Needed


    Original     		PDF HMC416LP4 416LP4E HMC416LP4 HMC416LP4E RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Rev. V1 Features MAGX-000035-015000 Flanged •    GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation


    Original     		PDF MAGX-000035-015000 MAGX-000035-01500S

    2SK163 spice model

    Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
    Text: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model
    Text: RF Manual 9th edition Application and design manual for RF products November 2006 date of release: November 2006 document order number: 9397 750 15817 Henk Roelofs,Vice President & General Manager RF Products Introduction We are excited to introduce the first issue of the RF Manual under our new


    Original     		PDF November2006 2006NXPB Motorola transistor smd marking codes MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    MN864779

    Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
    Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.


    Original     		PDF A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY

    388LP4E

    Abstract: HMC388LP4
    Text: HMC388LP4 / 388LP4E v02.0805 MMIC VCO w/ BUFFER AMPLIFIER, 3.15 - 3.4 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +4.9 dBm • Wireless Local Loop WLL Phase Noise: -113 dBc/Hz @100 KHz • VSAT & Microwave Radio No External Resonator Needed


    Original     		PDF HMC388LP4 388LP4E HMC388LP4 HMC388LP4E 388LP4E