Untitled
Abstract: No abstract text available
Text: RF Micro Devices RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications The RF5198 and RF5184 from RF Micro Devices® RFMD® are high-power, high-efficiency linear power amplifier modules specifically designed for
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RF5198
RF5184
RF5184
RF5198)
RF5184)
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Untitled
Abstract: No abstract text available
Text: S−AU57 TOSHIBA RF POWER AMPLIFIER MODULE S−AU57 UHF BAND HAM FM RF POWER AMPLIFIER MODULE HAND−HELD TRANSCEIVER Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power
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Untitled
Abstract: No abstract text available
Text: S−AV17 TOSHIBA RF POWER AMPLIFIER MODULE S−AV17 VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VCC 16 V DC Supply Voltage VCON 16 V Total Current IT 14 A
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400mW
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RMPA1951-102
Abstract: RO4003
Text: RMPA1951-102 RF Components 3V PCS CDMA Power Amplifier Module PRODUCT INFORMATION Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power
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RMPA1951-102
RMPA1951-102
RO4003
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Untitled
Abstract: No abstract text available
Text: S−AU68L TOSHIBA RF POWER AMPLIFIER MODULE S−AU68L UHF BAND FM POWER AMPLIFIER MODULE Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power Pi 50 mW Output Power Po 12
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AU68L
000707EAA1
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"RF power MOSFETs"
Abstract: LE17 LMP1603 LMP2003 rf mosfet power amplifier MOSFET AMPLIFIER For MOBILE RADIO
Text: RF AMPLIFIER MODULES Semelab is pleased to announce the first modules in a range designed in conjunction with LMT for Private Mobile Radio PMR systems. These modules utilise Semelab's own RF power MOSFETs in order to achieve: • High output power (5.5W typically)
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-25dBc)
LMP2003
LMP1603
"RF power MOSFETs"
LE17
LMP1603
LMP2003
rf mosfet power amplifier
MOSFET AMPLIFIER For MOBILE RADIO
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Abstract: RA07M3843M RA07M3843M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3843 RA07M3843M 07M3843M RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3843M is a 7-watt RF MOSFET Amplifier Module
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RA07M3843M
07M3843
378-430MHz
RA07M3843M
430-MHz
marking GG
RA07M3843M-101
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SE2580L-EV1
Abstract: No abstract text available
Text: DATA SHEET SE2580L: Dual Band 802.11a/b/g/n Wireless LAN Power Amplifier Applications Product Description • • The SE2580L is a matched 802.11a/b/g/n WLAN RF Power Amplifier module providing all the functionality of the power amplifiers, match, harmonic filters and
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SE2580L:
11a/b/g/n
SE2580L
IEEE802
DST-00304
SE2580L-EV1
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Untitled
Abstract: No abstract text available
Text: S−AU50L TOSHIBA RF POWER AMPLIFIER MODULE S−AU50L UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power Pi 150
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AU50L
000707EAA1
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Untitled
Abstract: No abstract text available
Text: S−AU50M TOSHIBA RF POWER AMPLIFIER MODULE S−AU50M UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER Unit: mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power Pi 150 mW
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AU50M
000707EAA1
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IEEE802.11a/b/g
Abstract: RF5824 RF5824PCBA-41X transistor 11a
Text: RF5824 Preliminary 3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE Typical Applications • IEEE802.11a/b/g and IEEE802.11n WLAN • 2.5GHz and 5GHz ISM Bands Applications • Wireless LAN Systems Applications • Single-Chip RF Power Amplifier Module • Portable Battery-Powered Equipment
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RF5824
IEEE802
11a/b/g
RF5824
11a/b/g,
90GHz
85GHz
IEEE802.11a/b/g
RF5824PCBA-41X
transistor 11a
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RA08N1317M
Abstract: RA08N1317M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317 RA08N1317M 08N1317M RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module
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RA08N1317M
08N1317
135-175MHz
RA08N1317M
175-MHz
RA08N1317M-101
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Abstract: RA07H4452M RA07H4452M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452 RA07H4452M 07H4452M RoHS Compliance ,440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module
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RA07H4452M
07H4452
440-520MHz
RA07H4452M
520-MHz
marking GG
RA07H4452M-101
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QPP-021
Abstract: No abstract text available
Text: QPP-021 180W, 869-894MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-021 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The
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QPP-021
869-894MHz
QPP-021
H10549)
H10895)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors S-AU3 RF Power Amplifier Module Unit in mm 6S0 UHF Power Amplifier Module HAM FM Features • Output Power : P0 > 13W • Minimum Gain : Gp = 18.1 dB • Efficiency : \ > 40% • 5 0 ii Input/Output Impedance • Guaranteed Stability
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15000PF
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F 711
Abstract: TOSHIBA RF Power Module
Text: RF POWER AMPLIFIER MODULE S-AU9 900MHz UHF POWER AMPLIFIER MODULE Unit in mm MCA FEATURES : 2-R2.1±CL2 . Output Power : P0 SS14W . Minimum Gain : Gp=18.4dB . Efficiency : M a 7^' S3 5% û5±ai5 . 50 0 Input/Output Impedance Uâ^ . Guaranteed Stability 25.4
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900MHz
SS14W
200mW,
1500pF,
10/iF
F 711
TOSHIBA RF Power Module
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68757H SILICON MOS FET POWER AMPLIFIER, 896-941 MHz, 3W FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm £ PIN: RF INPUT 0 P in d VGG GATE BIAS SUPPLY ©VDD DRAIN BIAS SUPPLY ©PO RF OUTPUT © G N D FIN H46 ABSOLUTE MAXIMUM RATINGS
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M68757H
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S-AU30
Abstract: No abstract text available
Text: TOSHIBA RF POWER AMPLIFIER MODULE S-AU30 Unit in mm 900MHz UHF POWER AMPLIFIER MODULE USA CELLULAR RADIO 4.8JZS + Q 3 . Output Power : P o ^ 6 W . Minimum Gain : Gp=17.7dB . Efficiency : 7 t ÌS30% . 50 il Input/Output Impedance + Û2 5-a5-Ql . Guaranteed Stability
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S-AU30
900MHz
100mW,
100mW
S-AU30
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Untitled
Abstract: No abstract text available
Text: RF POWER AMPLIFIER MODULE S-AV10L,AV10H Unit in mm VHF POWER AMPLIFIER MODULE FEATURES : 2— R 2.1±0.2 . Output Power : P0 S 14W in O d •H +! d . Minimum Gain : Gp=18.5dB . Efficiency . 50Q fi L 4-0Ol5±ai5 : 7x^40% Input and Output Impedance ¿0.5 fi
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S-AV10L
AV10H
135-155MHz
150-175MHZ
15000pF
S-AV10L,
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S-AU16VH
Abstract: S-AU16H S-AU16L S-AU16SH
Text: RF POWER AMPLIFIER MODULE S-AU16H, AU16L, AU16SH,AU16VH UHF POWER AMPLIFIER MODULE Unit in nnn HANDY TRANSCEIVER 42±a25 MAXIMUM RATINGS <Tc=25°C) SYMBOL CHARACTERISTIC DC Supply Voltage UNIT RATING VCC 16 V DC Supply Voltage v C0N 16 V DC Supply Voltage
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S-AU16H,
AU16L,
AU16SH
AU16VH
150mW
30MHz
S-AU16L
-470MHz
S-AU16H
S-AU16VH
S-AU16SH
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67799SHA SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO D im ensions in mm OUTLINE DRAWING BLOCK DIAGRAM • “PT’ I PIN: ABSOLUTE MAXIMUM RATINGS Symbol Supply voltage V gg Gate bias voltage RF IN PU T
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M67799SHA
490-512MHz,
490-512M
13dBm
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68732SH SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO D im ensions in mm OUTLINE DRAWING BLOCK DIAGRAM •“PT’ I PIN: ABSOLUTE MAXIMUM RATINGS Symbol Supply voltage V gg Gate bias voltage RF IN PU T
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M68732SH
490-512MHz,
490-512M
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68731N SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm • “PT’ I PIN: ABSOLUTE MAXIMUM RATINGS Symbol Supply voltage V gg Gate bias voltage RF IN PU T
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M68731N
142-163MHz,
142-163M
142ADIO
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68732H SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm • “PT’ I PIN: ABSOLUTE MAXIMUM RATINGS Symbol Supply voltage V gg Gate bias voltage RF IN PU T
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M68732H
450-470MHz,
450-470M
17dBm
450MH2
450MHz
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