Untitled
Abstract: No abstract text available
Text: RF5184 RF5184MultiBand UMTS Power Amplifier Module MULTI-BAND UMTS POWER AMPLIFIER MODULE Features VMODE HB VCC BIAS VCC1 HB VCC2 HB VCC2 HB VCC2 HB Package Style: QFN, 24-Pin, 4mmx4mm 24 23 22 21 20 19 VREG - HB 1 18 NC Bias HB Input/Output Internally
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RF5184MultiBand
RF5184
24-Pin,
-41dBc
-40dBc
DS080613
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RF5184
Abstract: IPC-SM-782 RF5184PCBA-410
Text: RF5184 RF5184MultiBand UMTS Power Amplifier Module MULTI-BAND UMTS POWER AMPLIFIER MODULE Features VMODE HB VCC BIAS VCC1 HB VCC2 HB VCC2 HB VCC2 HB Package Style: QFN, 24-Pin, 4mmx4mm 24 23 22 21 20 19 VREG - HB 1 18 NC Bias HB Input/Output Internally
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RF5184
RF5184MultiBand
24-Pin,
2002/95/EC
DS080908
RF5184
IPC-SM-782
RF5184PCBA-410
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IPC-SM-782
Abstract: RF5184 RF5184PCBA-410
Text: RF5184 DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE Typical Applications • 3V W-CDMA Cellular Handset Band 5 • 3V W-CDMA US-PCS Handset (Band 2) Product Description -A- 4.0 The RF5184 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third
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RF5184
800MHz/1900MHz
RF5184
824MHz
849MHz
1850MHz
1910MHz
IPC-SM-782
RF5184PCBA-410
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cell phone detector block diagram
Abstract: RF5184 RF5198
Text: RFMD RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications Features: • RF input and output internally matched to 50 ohms • Low-cost, thermally efficient, low-profile plastic package • Output power is configurable for
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RF5198
RF5184
RF5198
RF5184
cell phone detector block diagram
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Untitled
Abstract: No abstract text available
Text: RF Micro Devices RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications The RF5198 and RF5184 from RF Micro Devices® RFMD® are high-power, high-efficiency linear power amplifier modules specifically designed for
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RF5198
RF5184
RF5184
RF5198)
RF5184)
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Untitled
Abstract: No abstract text available
Text: RF5184 RF5184MultiBand UMTS Power Amplifier Module MULTI-BAND UMTS POWER AMPLIFIER MODULE Features VMODE HB VCC BIAS VCC1 HB VCC2 HB VCC2 HB VCC2 HB Package Style: QFN, 24-Pin, 4mmx4mm 24 23 22 21 20 19 VREG - HB 1 18 NC Bias HB Input/Output Internally
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RF5184
RF5184MultiBand
24-Pin,
DS080219
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Untitled
Abstract: No abstract text available
Text: RF5184 RF5184MultiBand UMTS Power Amplifier Module MULTI-BAND UMTS POWER AMPLIFIER MODULE Features VMODE HB VCC BIAS VCC1 HB VCC2 HB VCC2 HB VCC2 HB Package Style: QFN, 24-Pin, 4mmx4mm 24 23 22 21 20 19 VREG - HB 1 18 NC Bias HB Input/Output Internally
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RF5184MultiBand
RF5184
24-Pin,
-41dBc
-40dBc
DS080327
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polar modulator
Abstract: RF3158 RF5184 RF5198 polar loop transmitter
Text: RFMD RF3158 GSM/EDGE PowerStar® 6x6mm Power Amplifier Module Features: • Integrated power control and band select • Single 3.0V to 4.5V supply voltage • 47% low band and 45% high band minimum GMSK PAE • 20% 8PSK PAE • Improved 8PSK PAE at low power
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RF3158
GSM850/EGSM900/DCS/PCS
RF5184
polar modulator
RF3158
RF5198
polar loop transmitter
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