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    RF NPN POWER TRANSISTOR 60W Search Results

    RF NPN POWER TRANSISTOR 60W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    RF NPN POWER TRANSISTOR 60W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPB2060

    Abstract: No abstract text available
    Text: UPB2060 60W PEP, 1.8-2.0 GHz, 26V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB2060 is a high-power COMMON EMITTER bipolar transistor capable of providing 60 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed


    Original     		PDF UPB2060 UPB2060 400mA 491w6

    NTE368

    Abstract: transistor C 548 B
    Text: NTE368 Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic:


    Original     		PDF NTE368 512MHz NTE368 512MHz. 470MHz 470MHz, transistor C 548 B

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi- OUTLINE DRAWING


    Original     		PDF 2SC3102 2SC3102 520MHz, 520MHz. 20n-A.

    MRF455

    Abstract: MRF455 APPLICATION NOTES TRANSISTOR mrf455
    Text: MRF455 The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V M/A-COM Products Released - Rev. 05202009 Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 V, 30 MHz characteristics —


    Original     		PDF MRF455 30MHz, MRF455 MRF455 APPLICATION NOTES TRANSISTOR mrf455

    nte360

    Abstract: No abstract text available
    Text: NTE360 Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz Description: The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: • Specified 28 Volt, 175MHz Characteristics: Output Power = 40 Watts


    Original     		PDF NTE360 175MHz NTE360 125-175MHz 175MHz 500mA, 8-32-NC-3A

    2n6439

    Abstract: 2n6439 TRANSISTOR rf power amplifier 400MHz RF NPN POWER TRANSISTOR 60w
    Text: 2N6439 The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • • • • Product Image Guaranteed performance in 225 to 400 MHz broadband amplifier @ 28 Vdc


    Original     		PDF 2N6439 400MHz, 2n6439 2n6439 TRANSISTOR rf power amplifier 400MHz RF NPN POWER TRANSISTOR 60w

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 150 MHz 28 VOLTS POUT = 60W GP = 7.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the


    Original     		PDF MS1329 MS1629 200mA

    MS1329

    Abstract: No abstract text available
    Text: MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 150 MHz 28 VOLTS POUT = 60W GP = 7.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the


    Original     		PDF MS1329 MS1629 200mA MS1329

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1496 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS Pout = 60WATTS Gp = 7.5 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION


    Original     		PDF SD1496 60WATTS SD1496 900MHz

    transistor j5

    Abstract: No abstract text available
    Text: SD1496 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS Pout = 60WATTS Gp = 7.5 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION DESCRIPTION: The SD1496 is a silicon NPN transistor designed for 860 900 MHz base station applications. Gold metalization and


    Original     		PDF SD1496 60WATTS SD1496 900MHz transistor j5

    118-136

    Abstract: 118-136 mhz
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 150 MHz 28 VOLTS POUT = 60W GP = 7.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION:


    Original     		PDF MS1329 MS1629 118-136 118-136 mhz

    Untitled

    Abstract: No abstract text available
    Text: BUX82 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)


    Original     		PDF BUX82 BUX82 204AA

    BUX82

    Abstract: transistor 800V 1A
    Text: BUX82 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)


    Original     		PDF BUX82 BUX82 204AA transistor 800V 1A

    2SC2134

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR bZinflBR QQ175flb TTT NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm


    OCR Scan     		PDF QQ175flb 2SC2134 220MHz

    2SC2134

    Abstract: RF NPN POWER TRANSISTOR 60w vhf power transistor 50W
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2134 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm R1 applications.


    OCR Scan     		PDF 2SC2134 220MHz 220MHz, RF NPN POWER TRANSISTOR 60w vhf power transistor 50W

    transistor 2sc2630

    Abstract: 2SC2630 pin 2sc2630 T-40 RF POWER TRANSISTOR NPN vhf 50w rf power transistor mitsubishi RF POWER TRANSISTOR
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2630 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2630 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers in V H F band m obile radio applications. R1 FEATURES


    OCR Scan     		PDF 2SC2630 175MHz 175MHz, 175MHz 2SC2630 transistor 2sc2630 pin 2sc2630 T-40 RF POWER TRANSISTOR NPN vhf 50w rf power transistor mitsubishi RF POWER TRANSISTOR

    air variable capacitor

    Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES


    OCR Scan     		PDF 2SC3102 2SC3102 PoS60W, 520MHz, 520MHz. 520MHz) 100pF to10pF air variable capacitor POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC310 mica capacitor mica material capacitor murata pir

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES


    OCR Scan     		PDF 2SC3102 2SC3102 520MHz, 520MHz. 520MHz) 100pF to10pF to20pF

    POWER TRANSISTOR 2sC3102

    Abstract: 2SC3102 RF NPN POWER TRANSISTOR 60w
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES


    OCR Scan     		PDF 2SC3102 2SC3102 520MHz, 520MHz. 520MHz) POWER TRANSISTOR 2sC3102 RF NPN POWER TRANSISTOR 60w

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2630 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 6 3 0 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm FU


    OCR Scan     		PDF 2SC2630

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


    OCR Scan     		PDF ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031