NTE475
Abstract: m21 sot23 transistor RF NPN POWER TRANSISTOR 100MHz
Text: NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE475
NTE475
300MHz.
100mA,
100MHz
100kHz
175MHz
m21 sot23 transistor
RF NPN POWER TRANSISTOR 100MHz
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NTE473
Abstract: No abstract text available
Text: NTE473 Silicon NPN Transistor RF Power Driver Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or predriver stages
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NTE473
NTE473
175MHz,
250mA,
100mA,
100MHz
100kHz
175MHz
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common emitter amplifier
Abstract: NTE16002
Text: NTE16002 Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
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NTE16002
175MHz
common emitter amplifier
NTE16002
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2N3553
Abstract: 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic
Text: 2N3553 2N3553 Silicon NPN Transistor RF Power Driver Description: The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver
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2N3553
2N3553
175MHz,
100mA,
100MHz
100kHz
175MHz
250mA,
20html
2N3553 equivalent
TO39 Package
RF POWER TRANSISTOR NPN
7w RF POWER TRANSISTOR NPN
2N3553 NPN
npn power amplifier circuit
common emitter amplifier
transistor 2n3553
4 npn transistor ic
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RF POWER TRANSISTOR 100MHz
Abstract: NPN Epitaxial Silicon Transistor silicon transistor KSC2786 high Power Amplifier 100mhz Transistor FT TO NPN 4V 5mA
Text: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Current-Gain-Bandwidth Product f T=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic
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KSC2786
O-92S
600MHz
100MHz
RF POWER TRANSISTOR 100MHz
NPN Epitaxial Silicon Transistor
silicon transistor
KSC2786
high Power Amplifier 100mhz
Transistor FT TO NPN 4V 5mA
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Ksc1674
Abstract: No abstract text available
Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic
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KSC1674
600MHz
100MHz
Ksc1674
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rf fairchild transistor 100mhz amplifier
Abstract: KSC2786 rf fairchild transistor 100mhz
Text: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Current-Gain-Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic
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KSC2786
O-92S
600MHz
100MHz
rf fairchild transistor 100mhz amplifier
KSC2786
rf fairchild transistor 100mhz
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multi emitter transistor
Abstract: RF POWER TRANSISTOR 100MHz 7w RF POWER TRANSISTOR NPN rf transistor 320 IC vhf/uhf Amplifier multi-emitter transistor TRANSISTOR HANDLING 2A NTE16003
Text: NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF–UHF region.
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NTE16003
175MHz
NTE16003
200mA,
150mA,
100MHz
175MHz,
multi emitter transistor
RF POWER TRANSISTOR 100MHz
7w RF POWER TRANSISTOR NPN
rf transistor 320
IC vhf/uhf Amplifier
multi-emitter transistor
TRANSISTOR HANDLING 2A
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR POWER SEMICONDUCTOR Features • • • Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications
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MMBTH10
OT-23
OT-23,
MIL-STD-202,
100MHz,
DS31031
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SS9016
Abstract: No abstract text available
Text: SS9016 SS9016 AM Converter, FM/RF Amplifier of Low Noise. • High total power dissipation. PT=400mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings
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SS9016
400mW)
SS9016
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KSC1674
Abstract: No abstract text available
Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC1674
600MHz
100MHz
KSC1674
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2786
600MHz
100MHz
O-92S
KSC2786
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2SC1070
Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low
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2SC1070
s parameters RF NPN POWER TRANSISTOR 100MHz
Tma UHF
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2SC2758
Abstract: No abstract text available
Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC2758,2SC2758R RF AM P. FOR UHF TV TUNER NPN SILICON TRANSISTOR The 2SC2758, 2SC2758R are specifically designed fo r U HF RF am p lifie r PACKAGE DIMENSIONS applications. The 2SC2758 and 2SC2758R feature high power gain, low
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2SC2758
2SC2758R
2SC2758,
2SC2758R
25x5x0
2758R
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transistor revers characteristic
Abstract: NF005 KSC1674 QDS4744 TRANSISTOR 100MHz
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC1674 TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gpa=22dB at f=100MHz s ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol
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KSC1674
600MHz
100MHz
D0S474t,
E22KO
transistor revers characteristic
NF005
KSC1674
QDS4744
TRANSISTOR 100MHz
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Untitled
Abstract: No abstract text available
Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT>600MHz Typ • High Power Gain Gpe=22dB at f= 100MHz ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic
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OCR Scan
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KSC1674
600MHz
100MHz
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage
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OCR Scan
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KSC2786
600MHz
100MHz
100MHz
0D24fll5
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SS9016
Abstract: H 649 A transistor
Text: SS9016 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE. * High total power dissipation. PT=400mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Collector Current
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OCR Scan
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SS9016
400mW)
100nA,
0Q252Q0
SS9016
H 649 A transistor
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Untitled
Abstract: No abstract text available
Text: FORWARD INTCENAHONAl ELECTRONICS LTD, S9016 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE * High Total power dissipation. Pt=400mW ABSOLUTE MAXIMUM RATINGS a t Tamb=2$°C C haracteristic Symbol R ating
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OCR Scan
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S9016
400mW)
100uA
10VIeM)
100MHz
50ohm
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Untitled
Abstract: No abstract text available
Text: SS9016 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE. TO-92 • High total power dissipation. PT=400mW ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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OCR Scan
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SS9016
400mW)
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PDF
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Untitled
Abstract: No abstract text available
Text: SS9016 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE. • High total power dissipation. PfMOOmW ABSOLUTE MAXIMUM RATINGS (TA-2 5 t) C haracteristic Sym bol Collector-Base Voltage Coilsctor-Hm itter Voltage Emitter-Base Voltage
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SS9016
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Untitled
Abstract: No abstract text available
Text: | e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1674 SEMICONDUCTOR NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA TV PIE A M P L IF IE R S TUNER RF AMPLEFIER,MIXER,OSCILLATOR * High Current Gain-Bandwidth Product fT=600MHz Typ * High Power Gain Gpe=22d B at f=100MHz
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2SC1674
600MHz
100MHz
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BF 234 transistor
Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
Text: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz
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OCR Scan
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KSC2786
600MHz
-22dB
100MHz
O-92S
KSC2786
100MHz
T-31-17
BF 234 transistor
transistor
RF POWER TRANSISTOR 100MHz
samsung tv
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transistor L42
Abstract: c1674 baw 92 T-3117 0lc04 KSC1674 RF POWER TRANSISTOR 100MHz samsung tv samsung tv tuner BRY10
Text: ¡SAMSUNG SE MIC OND UC TO R INC D KSC1674 OOObálb £ | T '-jy -fy NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz
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OCR Scan
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KSC1674
600MHz
100MHz
10/iA,
T-31-17
100MHz
transistor L42
c1674
baw 92
T-3117
0lc04
RF POWER TRANSISTOR 100MHz
samsung tv
samsung tv tuner
BRY10
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