RF NPN POWER TRANSISTOR 1000 WATT Search Results

RF NPN POWER TRANSISTOR 1000 WATT Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF NPN POWER TRANSISTOR 1000 WATT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRANSISTOR 618 Abstract: J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS Text: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration	Original	MAPRST1030-1KS TRANSISTOR 618 J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS	PDF
mrf571 Abstract: 2N3866 Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product	Original	2N3866 2N3866A To-39 28Vdc MRF545 MRF544 mrf571	PDF
2N3866A Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427 Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product	Original	2N3866 2N3866A To-39 28Vdc MRF555 2N4427 MRF4427, 2N3866A RF NPN POWER TRANSISTOR 1000 WATT Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427	PDF
2n4427 MOTOROLA Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz	Original	2N4427 To-39 BFR91 BFR90 MRF545 MRF544 MSC1301 2n4427 MOTOROLA motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola	PDF
RF 2N3866 Abstract: 2N3866 2N3866A Transistor 2N3866 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF607 Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product	Original	2N3866 2N3866A To-39 28Vdc Volta15 RF 2N3866 2N3866A Transistor 2N3866 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF607	PDF
2n4427 MOTOROLA Abstract: motorola 2N4427 2n4427 MSC1301 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA	Original	2N4427 To-39 MRF4427, MSC1301 2n4427 MOTOROLA motorola 2N4427 2n4427 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559	PDF
2N4427 Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427 Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39	Original	2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427	PDF
2n4427 Abstract: 62503 Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39	Original	2N4427 To-39 2N4427 62503	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB	Original	2N6255 To-39 56-570-65/3B 2N6255	PDF
transistor ballast 1000W Abstract: transistor 1000W 1030 mhz 1000W TRANSISTOR MAPRST1030-1KS J22 transistor Text: AVIONICS PULSED POWER TRANSISTOR 1000 WATTS, 1030 MHz, 10us PULSE, 1% DUTY 23 Jan 2007 Outline Drawing Features • • • • • • • • • MAPRST1030-1KS NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation	Original	MAPRST1030-1KS transistor ballast 1000W transistor 1000W 1030 mhz 1000W TRANSISTOR MAPRST1030-1KS J22 transistor	PDF
BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
2N6255 Abstract: 4 watt VHF Text: 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier; pre-driver, driver, and	Original	2N6255 To-39 56-570-65/3B 2N6255 4 watt VHF	PDF
2N6255 Abstract: MSC-1306 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB	Original	2N6255 To-39 56-570-65/3B MSC1306 2N6255 MSC-1306	PDF
5659065-3b Abstract: 56-590-65-3B arco 463 uhf vhf amplifier common collector amplifier circuit designing MRF607 MSC1322 56590653B Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz	Original	MRF607 To-39 MSC1322 56-590-65-3B 5659065-3b 56-590-65-3B arco 463 uhf vhf amplifier common collector amplifier circuit designing MRF607 56590653B	PDF

5659065-3B Abstract: arco 463 56-590-65-3B 56590653B Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz	Original	MRF607 To-39 MRF607 56-590-65-3B 5659065-3B arco 463 56-590-65-3B 56590653B	PDF
56-590-65-3B Abstract: 56590653B arco 463 MRF607 Text: MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz 11.5 minimum Gain @ 12.5V, 175 MHz 50% Efficiency @ 12.5V, 175 MHz 1 2 3 1. EMITTER	Original	MRF607 To-39 56-590-65-3B 56-590-65-3B 56590653B arco 463 MRF607	PDF
t 3866 power transistor Abstract: t 3866 transistor t 3866 TRANSISTOR D 471 C 3866 3866A UHF power TRANSISTOR PNP TO-39 672-3866A 3866 D 400 transistor Text: Fax-on-Demand: 86-22-24207687 / 25-471-1126 Tel-on-Demand: 86-22-24207688 / 25-471-1136 Before ordering check with factory for most current data 672-3866 / 672-3866A RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor	Original	72-3866A To-39 28Vdc t 3866 power transistor t 3866 transistor t 3866 TRANSISTOR D 471 C 3866 3866A UHF power TRANSISTOR PNP TO-39 672-3866A 3866 D 400 transistor	PDF
2N6255 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB	Original	2N6255 To-39 2N6255 56-570-65/3B	PDF
ptb2011 Abstract: No abstract text available Text: ERICSSON $ PTB 2011 0 50 Watts, 500-1000 MHz UHF Broadband Power Transistor Prelim inary Description Key Features The 20110 is a class AB, NPN, common emitter RF Power Tran sistor intended for 28 VDC operation across 500 -1000 MHz fre quency band. It is rated at 50 Watts minimum output power and	OCR Scan	200nv\x2 200mAx2 ptb2011	PDF
ferroxcube for ferrite beads 56-590-65 Abstract: ferroxcube 56-590-65 RF POWER TRANSISTOR NPN ON QE Series ferroxcube ferrite beads beads ferroxcube vk200-20 56590653B 565-9065 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts	OCR Scan	MRF454 1000pF, tiF/15 VK200-20/4B, 56-590-65/3B ferroxcube for ferrite beads 56-590-65 ferroxcube 56-590-65 RF POWER TRANSISTOR NPN ON QE Series ferroxcube ferrite beads beads ferroxcube vk200-20 56590653B 565-9065	PDF
ferroxcube ferrite beads Abstract: ferroxcube for ferrite beads Motorola transistors MRF455 56-590-65/3B Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF455 . . . designed for power amplifier applications in Industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 60 Watts	OCR Scan	MRF455 jF/15 VK200-20/4B, 56-590-65/3B MRF455 ferroxcube ferrite beads ferroxcube for ferrite beads Motorola transistors MRF455 56-590-65/3B	PDF
Motorola transistors MRF455 Abstract: mrf455 arco 469 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF455 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 60 Watts	OCR Scan	MRF455 VK200-20/4B, 56-590-65/3B MRF455 Motorola transistors MRF455 arco 469	PDF
56590653B Abstract: MRF316 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF316 . . . designed primarily for wideband large-signal output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts	OCR Scan	MRF316 MRF316 56590653B	PDF
ferroxcube for ferrite beads 56-590-65 Abstract: ferroxcube 56-590-65 vk200-20 VK-200 transistor j201 arco 469 arco 466 MRF454 motorola vk200 ferroxcube for ferrite beads Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts	OCR Scan	MRF454 1000pF, iF/15 VK200-20/4B, 56-590-65/3B ferroxcube for ferrite beads 56-590-65 ferroxcube 56-590-65 vk200-20 VK-200 transistor j201 arco 469 arco 466 MRF454 motorola vk200 ferroxcube for ferrite beads	PDF

RF NPN POWER TRANSISTOR 1000 WATT Search Results

RF NPN POWER TRANSISTOR 1000 WATT Result Highlights (5)

RF NPN POWER TRANSISTOR 1000 WATT Datasheets Context Search

TRANSISTOR 618

mrf571

2N3866A

2n4427 MOTOROLA

RF 2N3866

2n4427 MOTOROLA

2N4427

2n4427

Untitled

transistor ballast 1000W

BB 509 varicap diode

2N6255

2N6255

5659065-3b

5659065-3B

56-590-65-3B

t 3866 power transistor

2N6255

ptb2011

ferroxcube for ferrite beads 56-590-65

ferroxcube ferrite beads

Motorola transistors MRF455

56590653B

ferroxcube for ferrite beads 56-590-65