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    RF MICROWAVE AMPLIFIER WITH S PARAMETERS Search Results

    RF MICROWAVE AMPLIFIER WITH S PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRJ43DR7LV224KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV474KW01L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV334KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ43QR7LV154KW01L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd

    RF MICROWAVE AMPLIFIER WITH S PARAMETERS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n3478

    Abstract: RF Transistor s-parameter
    Text: Test & Measurement Application Note 95-1 H S-Parameter Techniques for Faster, More Accurate Network Design http://www.hp.com/go/tmappnotes H Contents 1. Foreword and Introduction 2. Two-Port Network Theory 3. Using S-Parameters 4. Network Calculations with Scattering Parameters


    Original     		PDF

    MMA-121633-R5

    Abstract: mmic
    Text: MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet October, 2012 Features: • • • • • • • • Frequency Range: 12.5 – 15.5 GHz P1dB: 32 dBm IM3 Level -44dBc @Po=20dBm/tone Gain: 23.5 dB Vdd =4 to 6 V Ids = 1200 to 2500 mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-121633-R5 -44dBc 20dBm/tone MMA-121633 10mil 4350B MMA121633-R5 MMA-121633-R5 mmic PDF

    GE Transistor Manual

    Abstract: cutler 35860 5988-0424EN transistor circuit transistor circuit design TRANSISTOR hFE-100
    Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing bandwidth and noise figure, while


    Original     		5988-0424EN GE Transistor Manual cutler 35860 transistor circuit transistor circuit design TRANSISTOR hFE-100 PDF

    GE Transistor Manual

    Abstract: transistor k 316 35820 transistor circuit design
    Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing


    Original     		5988-0424EN GE Transistor Manual transistor k 316 35820 transistor circuit design PDF

    CC45T47K240G5-C2

    Abstract: SA1515BX101M2HX5 CC45T47K240G5C2 SK04B102M11A6 AVX0402YG104ZAT2A MMA-005022 MicroMetrics 7V170 GRP155F51A474ZDO2B 00xF
    Text: MMA-005022 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012 Features: •       Frequency Range: 30KHz – 50 GHz P1dB: +22 dBm Vout: 7V p-p @50Ω Gain: 15.5 dB Vdd =7 V Ids = 200 mA Input and Output Fully Matched to 50 Ω Die size: 2350 x 1050 x 50 um


    Original     		MMA-005022 30KHz-50GHz 30KHz MMA-005022 30KHz 50GHz SA1515BX101M2HX5 AVX0402YG104ZAT2A SK04B102M11A6 GRP155F51A474ZDO2B CC45T47K240G5-C2 CC45T47K240G5C2 MicroMetrics 7V170 00xF PDF

    mma28-3

    Abstract: No abstract text available
    Text: MMA-283136-R5 28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 Features: •        32 Frequency Range: 28 - 31 GHz P1dB: +36 dBm IM3 Level: -35 dBc @Po=26dBm/tone Gain: 22 dB Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-283136-R5 28-31GHz 26dBm/tone 3000mA 28GHz 31GHz. 10mil 4350B MMA283136 mma28-3 PDF

    MMA005022B

    Abstract: Rogers 4350B MMA-005022
    Text: MMA-005022-R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012 Features: •        Frequency Range: 30KHz – 40 GHz P1dB: +22 dBm Vout: 7V p-p @50Ω Gain: 13.5 dB Vdd =7 V Ids = 200 mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-005022-R4 30KHz-50GHz 30KHz MMA-005022 30KHz 50GHz 10mil 4350B MMA-005022-R4 MMA005022B Rogers 4350B PDF

    Rogers 4350B

    Abstract: MMA-172135 rf microwave amplifier with S Parameters MMA-172135-R5
    Text: MMA-172135-R5 17-21GHz, 3W Power Amplifier Data Sheet October, 2012 Features: •       Frequency Range: 17 – 21 GHz P1dB: 35 dBm IM3 Level -45dBc @Po=20dBm/tone Gain: 27 dB Vdd =6 V Ids = 1500 to 2800 mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-172135-R5 17-21GHz, -45dBc 20dBm/tone MMA-172135 21GHz 2135-R5 10mil 4350B Rogers 4350B rf microwave amplifier with S Parameters MMA-172135-R5 PDF

    Rogers 4350B

    Abstract: No abstract text available
    Text: MMA-374030 37-41GHz, 1W MMIC Power Amplifier Data Sheet December, 2012 Features: • • • • • • • • Frequency Range: 37 - 41 GHz P1dB: +30.5 dBm IM3 Level: -41 dBc @Po=18dBm/tone Gain: 22 dB Vdd = 4 to 6 V Idsq = 1000 to 2000 mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-374030 37-41GHz, 18dBm/tone 39dBm 37GHz 41GHz. 10mil 4350B MMA374030 Rogers 4350B PDF

    RFID 5.8Ghz

    Abstract: HMC189MS8 HMC264CB1 HMC265CB1 HMC266 HMC280MS8G HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch
    Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION FEBRUARY 2000 Wireless Symposium 2000 is Stage for New Product Introductions Wireless Symposium/Portable by Design 2000 held in San Jose, CA February 2125 marked the introduction of 16 new MMIC products, covering DC-40 GHz,


    Original     		DC-40 HMC280MS8G HMC189MS8 RFID 5.8Ghz HMC264CB1 HMC265CB1 HMC266 HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch PDF

    mmic c8

    Abstract: 4350B
    Text: MMA-273435-R5 27-34GHz High Linearity MMIC Amplifier Data Sheet September, 2012 Features: •        Frequency Range: 27 – 34 GHz P1dB: +32 dBm IM3 Level: -45 dBc @Po=20dBm/tone Gain: 20 dB Vdd = 4 to 6V Idsq = 1500 to 3800mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-273435-R5 27-34GHz 20dBm/tone 3800mA 27GHz 34GHz. 32dBm -45dBc 20dBm/tonHz 10mil mmic c8 4350B PDF

    Rogers 4350B

    Abstract: rf microwave amplifier with S Parameters 4350B
    Text: MMA-212734-R5 21-27GHz, 3W Power Amplifier Data Sheet October, 2012 Features: •        Frequency Range: 21 – 27 GHz P1dB: 34 dBm IM3 Level -45dBc @Po=20dBm/tone Gain: 25 dB Vdd =6 V Ids = 1500 to 2800 mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-212734-R5 21-27GHz, -45dBc 20dBm/tone MMA-212734 27GHz 10mil 4350B MMA212734-R5 Rogers 4350B rf microwave amplifier with S Parameters PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    Rogers 4350B

    Abstract: MMA-212734
    Text: MMA-212734 21-27GHz, 3W Power Amplifier Data Sheet March, 2012 Features: •        Frequency Range: 21 – 27 GHz P1dB: 34 dBm IM3 Level -45dBc @Po=20dBm/tone Gain: 25 dB Vdd =6 V Ids = 1500 to 2800 mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-212734 21-27GHz, -45dBc 20dBm/tone MMA-212734 27GHz 10mil 4350B MMA212734 Rogers 4350B PDF

    Rogers 4350B

    Abstract: rf microwave amplifier with S Parameters
    Text: MMA-012727-R4 0.1-26.5GHz 0.5W Traveling Wave Amplifier Data Sheet November 2012 Features: •      Frequency Range: 0.1 – 26.5 GHz P3dB: +27 dBm Gain: 12.5 dB Vdd =8 to 12 V Ids =250 to 500 mA Input and Output Fully Matched to 50 Ω Applications:


    Original     		MMA-012727-R4 MMA-013027-R4 10mil 4350B MMA-012727-R4 Rogers 4350B rf microwave amplifier with S Parameters PDF

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MMA-283136 28-31GHz 4W MMIC Power Amplifier Data Sheet November, 2012 Features: • • • • • • • • • Frequency Range: 28 - 31 GHz P1dB: +36 dBm IM3 Level: -35 dBc @Po=26dBm/tone Gain: 22 dB Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-283136 28-31GHz 26dBm/tone 3000mA 28GHz 31GHz. 36dBm MM0-651-6700 MMA283136 PDF

    Rogers 4350B

    Abstract: mmic c8
    Text: MMA-374030 37-40GHz, 1W MMIC Power Amplifier Data Sheet March, 2012 Features: •        Frequency Range: 37 – 40 GHz P1dB: +30.5 dBm IM3 Level: -40 dBc @Po=18dBm/tone Gain: 22 dB Vdd = 5V Idsq = 1000 to 2000 mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-374030 37-40GHz, 18dBm/tone 38dBm 37GHz 40GHz. -40dBc 10mil 4350B MMA374030 Rogers 4350B mmic c8 PDF

    rf microwave amplifier with S Parameters

    Abstract: 340 mmic mma-273336 "Microwave technology Inc" Amplifier 20dbm p1db
    Text: MMA-273336 27-33GHz 4W MMIC Power Amplifier Data Sheet November, 2012 Features: • • • • • • • Frequency Range: 27 – 33 GHz P1dB: +36 dBm IM3 Level: -38 dBc @Po=20dBm/tone Gain: 22 dB Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-273336 27-33GHz 20dBm/tone 2800mA 124x110x2 27GHz 33GHz. 36dBm MMA273336 rf microwave amplifier with S Parameters 340 mmic mma-273336 "Microwave technology Inc" Amplifier 20dbm p1db PDF

    mmic

    Abstract: No abstract text available
    Text: MMA-273336 27-33GHz 4W MMIC Power Amplifier Data Sheet July, 2012 Features: •       32 Frequency Range: 27 – 33 GHz P1dB: +36 dBm IM3 Level: -38 dBc @Po=20dBm/tone Gain: 22 dB Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-273336 27-33GHz 20dBm/tone 2800mA 27GHz 33GHz. b27-33GHz 10mil 4350B MMA273336 mmic PDF

    Rogers 4350B

    Abstract: No abstract text available
    Text: MMA-273336 27-33GHz 4W MMIC Power Amplifier Data Sheet July, 2012 Features: •       32 Frequency Range: 27 – 33 GHz P1dB: +36 dBm IM3 Level: -38 dBc @Po=20dBm/tone Gain: 22 dB Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω


    Original     		MMA-273336 27-33GHz 20dBm/tone 2800mA 27GHz 33GHz. 36dBm P-1dB273336 10mil Rogers 4350B PDF

    gunn diode

    Abstract: No abstract text available
    Text: 8091 Microwave Technology Training System with LVDAMMW LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 02/2015 Microwave Technology Training System with LVDAM-MW, LabVolt Series, 8091 Table of Contents General Description


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    micro-x mhz ghz microwave

    Abstract: ba 5888 MMIC Amplifier Micro-X GHZ micro-X Package
    Text: BIPOLARICS, INC. Part Number BA6 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION DESCRIPTION AND APPLICATIONS: Bipolarics' BA6 is a high performance MMIC amplifier designed for general purpose use in 50Ω systems over a


    Original     		PDF

    rf microwave amplifier with S Parameters

    Abstract: BA2 capacitor BA11 02238
    Text: BIPOLARICS, INC. Part Number BA2 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems


    Original     		PDF