magnachip 0.18um
Abstract: nmos transistor 0.35 um TI 046 magnachip 0.18um 1p6m
Text: 0.18um 1P6M Low power 1.8V /3.3V updated in 2005.03.16 Features Vdd Core/IO 1.8V / 3.3V Substrate P-sub Well Retrograde Twin Well (Triple Well option) Isolation STI (Shallow Trench Isolation) Gate Oxide 37Å/70Å NO Oxide (electrical)
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2P4M P 82
Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
Text: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features Vdd Core/IO 3.3V / 5V Starting Material P(100), Non-Epi Well Retrograde Twin Well Structure Isolation Conventional LOCOS Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um
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TRANSISTOR 545
Abstract: No abstract text available
Text: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features Vdd Core/IO 3.3V / 5V Starting Material P(100), Non-Epi Well Retrograde Twin Well Structure Isolation Conventional LOCOS Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel
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0.35Um 1P4M
Abstract: nmos transistor 0.35 um
Text: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features Vdd Core/IO 3.3V / 5V Starting Material P(100), Non-Epi Well Retrograde Twin Well Structure Isolation Conventional LOCOS Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS
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cmos transistor 0.35 um
Abstract: UM207 ua 471 TRANSISTOR 641 nmos transistor 0.35 um 815 transistor 0.35Um 1P4M
Text: 0.35um 1P4M Embedded Flat ROM 3.3V, 5.0V updated in 2005.04.05 Features Vdd Core/IO 3.3V/3.3V, 5V/5V Substrate P-type (100), Non-EPI Well Retrograde Twin Well (NW, PW) Isolation Conventional LOCOS Transistor Single-Gate CMOS Channel Surface channel NMOS, Buried channel PMOS
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nmos transistor 0.35 um
Abstract: transistor 548
Text: 0.30um 1P4M Logic 3.3V updated in 2005.03.24 Features Vdd Core/IO 3.3V / 3.3V Starting material P(100), Non-EPI Well Retrograde twin well structure Isolation Conventional LOCOS Transistor Channel Buried channel PMOS Gate oxide Thermally grown oxide of 73A thickness in electrical
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XH035
Abstract: CMOS Process Family XH035 cmos process family passive inductor process 0.6 um cmos process 0.35 um CMOS gate area
Text: 0.35 µm CMOS Process Family XH035 RF CMOS Modular mixed signal 0.35 µm CMOS process with passive Main Process Flow components available for mixed-signal/RF analog applications p-/p+ epi-substrate Independent retrograde n- and p-well Spiral top thick metal inductor
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XH035
CMOS Process Family
XH035 cmos process family
passive inductor process
0.6 um cmos process
0.35 um CMOS gate area
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256K DPRAM
Abstract: CB45000 ST20 programmable schmitt trigger tristate nand gate
Text: CB45000 SERIES HCMOS6 STANDARD CELLS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability
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CB45000
256K DPRAM
ST20
programmable schmitt trigger
tristate nand gate
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tristate nand gate
Abstract: HCMOS6
Text: CB45000 SERIES HCMOS6 STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability
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CB45000
tristate nand gate
HCMOS6
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486DX-CPU
Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling
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bi 370 transistor
Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor
Text: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features Vdd Core/IO/HV Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization
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V/20V
30um2
36um2
bi 370 transistor
transistor BI 370
NMOS-2
TRANSISTOR BI 185
bi+370+transistor
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UM 66 datasheet
Abstract: UM 66 in
Text: 0.22um 1P5M Logic 2.5V /3.3V updated in 2005.03.21 Features Vdd Core/IO Well Isolation Transistor Channel Gate Oxide Gate Material LDD & Source/Drain Metallization Barrier Metal Metal Stacked Via Lithography Speed (nsec/gate) 2.5V/3.3V
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27um2
32um2
UM 66 datasheet
UM 66 in
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nmos transistor 0.35 um
Abstract: No abstract text available
Text: 0.25um 1P5M Logic 2.5V / 3.3V updated in 2005.03.21 Features Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization
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32um2
36um2
30um2
nmos transistor 0.35 um
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0.35uM STI
Abstract: MAGNACHIP 0.35um 0.32um CMOS
Text: 0.25um 1P5M Generic 2.5V / 3.3V or 2.5V / 5V updated in 2005.03.21 Features Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric
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30um2
36um2
0.35uM STI
MAGNACHIP
0.35um 0.32um CMOS
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Untitled
Abstract: No abstract text available
Text: 0.25um 2P5M Mixed Signal 2.5V / 3.3V updated in Oct 01, 2004 Features Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization
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32um2
36um2
30um2
100um2
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Untitled
Abstract: No abstract text available
Text: Foundry Services for Integrated Circuits and MEMS Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s Custom Foundry Service is the alternative to traditional foundry services, allowing customers to
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M4007-052013
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Untitled
Abstract: No abstract text available
Text: MICREL FOUNDRY SERVICES: S I L I C O N M A D E I N S I L I C O N VA L L E Y Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s custom foundry service is the alternative to traditional foundry services, allowing customers to develop their
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MICFOUND-060514
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manufacturer list cots radiation
Abstract: RAD HARD TRENCH TRANSISTOR TSMC Flash microcontroller radiation hard cmos cots radiation microcontroller radiation hard datasheet process flow diagram radiation cots cmos Upsets microcontroller radiation tolerance
Text: Special Feature Rad Hard, Space Ready Case Study: Evolution of a Fab-Independent Radiation-Hardened COTS IC Supplier Even though rad-hard systems are essential in space and tactical military systems, rad-hard semiconductor processes are rare. But what’s even more
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800-645-UTMC
manufacturer list cots radiation
RAD HARD TRENCH TRANSISTOR
TSMC Flash
microcontroller radiation hard
cmos cots radiation
microcontroller radiation hard datasheet
process flow diagram
radiation cots cmos
Upsets
microcontroller radiation tolerance
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delco 466
Abstract: seagate hard drive pcb TSC6000 TGC6000 op amp app notes variable PWM by using dsp TMS320F240 C240 TMS320 TMS320C240 app abstract
Text: EXTENDING YOUR REACHTM NORTH AMERICAN EDITION INTEGRATION VOL. 13 ▼ NO. 6 ▼ SEPTEMBER 1996 AN UPDATE ON TEXAS INSTRUMENTS SEMICONDUCTORS Two gate arrays Microscopic photo of gate array 0.18-micron technology offers flexibility, innovation T Metal interconnect
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18-micron
125million-transistors-on-a-chip
TGC6000
TEC6000
TSC6000
SSFN011
SFY53LXX609R
delco 466
seagate hard drive pcb
op amp app notes
variable PWM by using dsp TMS320F240
C240
TMS320
TMS320C240
app abstract
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Transistor morocco 9740
Abstract: Ablebond 8360 con hdr hrs ablebond 8086 interfacing with 8254 peripheral Date Code Formats diodes St Microelectronics formatter board Canon interfacing of 8237 with 8086 ST tOP MaRKinGS 388BGA
Text: RELIABILITY REPORT Q98001 SICL BUSINESS UNIT REPORT NUMBER : Q98001 QUALIFICATION TYPE : NEW DEVICE - NEW PACKAGE DEVICE : STPC Client SIP101 SALES TYPES : STPCD0166BTC3 - STPCD0175BTC3 TECHNICAL CODE : MDBT*CHDT1BR PROCESS : HCMOS6 - CROLLES FAB LOCATION
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Q98001
SIP101)
STPCD0166BTC3
STPCD0175BTC3
388BGA
Transistor morocco 9740
Ablebond 8360
con hdr hrs
ablebond
8086 interfacing with 8254 peripheral
Date Code Formats diodes St Microelectronics
formatter board Canon
interfacing of 8237 with 8086
ST tOP MaRKinGS
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ASX 12 D Germanium Transistor
Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
Text: v ol 4 3 ume A publication of IBM Microelectronics IBM’s Blue Logic Strategy In This Issue Third Quarter 1998, Vol. 4, No.3 1 IBM’s Blue Logic Strategy 4 High-Speed Design Styles Leverage IBM Technology Prowess 8 Low-Power Methodology and Design Techniques
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AT90PWM81
Abstract: No abstract text available
Text: Features • High performance, low power Atmel AVR® 8-bit Microcontroller • Advanced RISC architecture • • • • – 131 powerful instructions - most single clock cycle execution – 32 x 8 general purpose working registers – Fully static operation
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7734Qâ
AT90PWM81
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AMP0E
Abstract: AT90PWM81
Text: Features • High Performance, Low Power AVR 8-bit Microcontroller • Advanced RISC Architecture – 131 Powerful Instructions - Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation – Up to 1 MIPS Throughput per MHz
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256Bytes
7734P
AMP0E
AT90PWM81
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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