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    RETENTION MECHANISMS Search Results

    RETENTION MECHANISMS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10037908-103LF Amphenol Communications Solutions Mechanical Guidance Modules, Backplane Connectors, 7.2mm Guide Blade-External Thread. Visit Amphenol Communications Solutions
    10037912-103LF Amphenol Communications Solutions Mechanical Guidance Modules, Backplane Connectors, 10.8mm Guide Module Receptacle. Visit Amphenol Communications Solutions
    10037912-119LF Amphenol Communications Solutions Mechanical Guidance Modules, Backplane Connectors, 10.8mm Guide Module Receptacle. Visit Amphenol Communications Solutions
    10084610-101LF Amphenol Communications Solutions Mechanical Guidance Modules, Backplane Connectors, 10.8mm Guide Pin-External Thread. Visit Amphenol Communications Solutions
    92791-041 Amphenol Communications Solutions Mechanism, 4mm s/o, without Eject, with EMI Clip Visit Amphenol Communications Solutions

    RETENTION MECHANISMS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EEPROM retention testing

    Abstract: flash "high temperature data retention" mechanism ANH005 P1005 flash Activation Energy
    Text: Hybrid Memory Products Ltd Floating Gate Memory Arrays Retention Issues Introduction This document reviews the nature of Data Retention, and presents approaches to its specification and verification based upon procedures defined in the following IEEE publication:


    Original     		PDF P1005 150oC 32LCC) EEPROM retention testing flash "high temperature data retention" mechanism ANH005 flash Activation Energy

    RAMTRON

    Abstract: No abstract text available
    Text: Application Note Data Retention through Soldering Data retention at very high temperature Overview It is often desirable to program a nonvolatile memory device prior to soldering it onto a circuit board. This requirement may occur when the nonvolatile memory


    Original     		PDF 256Kb 545-FRAM, RAMTRON

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY FM25H20 2-Mbit 256 K x 8 Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		PDF FM25H20 151-year FM25H20

    agp connector

    Abstract: atx connector agp card atx add-in card mounting bracket pci
    Text: ECR #: 48 Title: AGP Card Retention Feature Release Date: 12/14/98 Impact: Change Spec Version: A.G.P. 2.0 Summary: AGP cards require retention in addition to the I/O mounting bracket, which is currently the sole method of retaining the cards. Using only the I/O mounting bracket as the retainer results in


    Original     		PDF 5-12B: 5-13B: 5-14B: agp connector atx connector agp card atx add-in card mounting bracket pci

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY FM25H20 2-Mbit 256 K x 8 Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table)


    Original     		PDF FM25H20 151-year FM25H20

    Untitled

    Abstract: No abstract text available
    Text: FM25CL64B 64-Kbit 8 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		PDF FM25CL64B 64-Kbit 64-Kbit 151-year FM25CL64B

    Untitled

    Abstract: No abstract text available
    Text: FM25C160B 16-Kbit 2 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		PDF FM25C160B 16-Kbit 64-Kbit 16-Kbit 151-year FM25C160B

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		PDF FM25040B 64-Kbit 151-year FM25040B

    Untitled

    Abstract: No abstract text available
    Text: FM25640B 64-Kbit 8 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		PDF FM25640B 64-Kbit 64-Kbit 151-year FM25640B

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		PDF FM25040B 64-Kbit 151-year FM25040B

    Untitled

    Abstract: No abstract text available
    Text: FM25L04B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		PDF FM25L04B 64-Kbit 151-year FM25L04B

    Untitled

    Abstract: No abstract text available
    Text: FM25L16B 16-Kbit 2 K x 8 Serial (SPI) F-RAM 16-Kbit (2 K × 8) Serial (SPI) F-RAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		PDF FM25L16B 16-Kbit 16-Kbit 151-year FM25L16B

    BD3X

    Abstract: ST1305 ST1331 ST1333 ST1335 ST1336
    Text: ST1331 ST1333 ST1335 ST1336 HIGH ENDURANCE CMOS 272 Bit EEPROM WITH STATE OF THE ART SECURITY MECHANISMS BRIEF DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5 VOLTS POWER SUPPLY HIGHLY RELIABLE CMOS EEPROM TECHNOLOGY: • 10 years data retention


    Original     		PDF ST1331 ST1333 ST1335 ST1336 ST1333/ ST1331/36) 3276cs. BD3X ST1305 ST1333 ST1336

    BD3X

    Abstract: sk 192
    Text: ST1331 ST1333 ST1335 ST1336 HIGH ENDURANCE CMOS 272 Bit EEPROM WITH STATE OF THE ART SECURITY MECHANISMS BRIEF DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5 VOLTS POWER SUPPLY HIGHLY RELIABLE CMOS EEPROM TECHNOLOGY: • 10 years data retention


    Original     		PDF ST1331 ST1333 ST1335 ST1336 ST1333/ ST1331/36) BD3X sk 192

    Gunn Diode symbol

    Abstract: cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet
    Text: CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY APPENDIX A: FAILURE RATE CALCULATION Thermal Acceleration Factors Acceleration factors AF for thermal stresses (High Temperature Operating Life, Data Retention and High Temperature Steady State Life) are calculated from the Arrhenius equation.


    Original     		PDF 62x10-5 Gunn Diode symbol cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet

    FM25640-GTR

    Abstract: AEC-Q100 FM25040 FM25640 FM25640-G FM25640-S
    Text: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process


    Original     		PDF FM25640 FM25640 64-kilobit AEC-Q100 FM25640B. FM25640-GTR AEC-Q100 FM25040 FM25640-G FM25640-S

    FM25160

    Abstract: FM25C160 FM25C160-S
    Text: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25C160 FM25C160 16-kilobit MS-012 FM25160 FM25C160-S

    FM25W256

    Abstract: FM25W256-G FM25W256-S
    Text: Preliminary FM25W256 256Kb FRAM Wide Voltage Serial Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb FM25W256 256-kilobit FM25W256, FM25W256-S A40003S RIC0439 150uA. FM25W256-G FM25W256-S

    FM25640-S

    Abstract: FM25040 FM25640 FM25640-G
    Text: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process


    Original     		PDF FM25640 FM25640 64-kilobit FM25640-S A40003S RIC0439 FM25640-S FM25040 FM25640-G

    FM25256B-G

    Abstract: FM25256B
    Text: FM25256B 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25256B 256Kb FM25256B 256-kilobit MS-012 FM25256B, FM25256B-G B70003G RIC0639 FM25256B-G

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25L512 512Kb FM25L512, RG5L51 40MHz

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM25L16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25L16 FM25L16,

    FM25CL64BG

    Abstract: r5l64B FM25L64B fm25cl64b-g FM25CL64B-GTR fm25l64
    Text: FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25CL64B FM25CL64B 64-kilobit FM25CL64BG r5l64B FM25L64B fm25cl64b-g FM25CL64B-GTR fm25l64

    Untitled

    Abstract: No abstract text available
    Text: ST1331 ST1333 ST1335 ST1336 SGS-THOMSON m HIGH ENDURANCE CMOS 272 Bit EEPROM WITH STATE OF THE ART SECURITY MECHANISMS BRIEF DATA Figure 1 Delivery forms SINGLE 5 VOLTS POWER SUPPLY HIGHLY RELIABLE CMOS EEPROM TECHNOLOGY: • 10 years data retention • 1 Million Erase/Write cycles endurance


    OCR Scan     		PDF ST1331 ST1333 ST1335 ST1336 ST1333/ ST1331/36)