D45128841G5-A80
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET / - N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM
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uPD45128441
608x4x4,
304x8x4,
152x16x4
S54G5-80-9JF
PD45128441
PD45128xxx.
juPD45128xxxG5
54-pin
D45128841G5-A80
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LX 2262
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / PD4564441,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random -access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 (word x bit x bank , respectively.
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uPD4564441
uPD4564841
uPD4564163
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
LX 2262
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a2-xqa
Abstract: IC-3394
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD 4516421 , 4516821 , 4516161 16M-bit Synchronous DRAM Description The ¿iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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16M-bit
uPD4516421
uPD4516821
uPD4516161
216-bit
44-pin
50-pin
IR35-107-2
VP15-107-2
a2-xqa
IC-3394
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30A120
Abstract: D45128 ATEN 1327
Text: PRELIMINARY DATA SHEET N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access
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uPD45128441
uPD45128841
uPD45128163
608x4x4,
304x8x4,
152x16x4
54-pin
30A120
D45128
ATEN 1327
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TA 1319 AP
Abstract: pd4564323
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564323 is a high-speed 67,108,864 bits synchronous dynamic random-access memories, organized as 524,288 words x 32 bits x 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
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uPD4564323
86-pin
UPD4564323
PD4564323.
PD4564323G5
TA 1319 AP
pd4564323
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ' /¿PD4516421A, 4516821 A, 4516161A ; 16M-bit Synchronous DRAM i i j D escrip tio n The//PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access ’ memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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uPD4516421A
516161A
16M-bit
The//PD4516421
516161A
216-bit
44-pin
50-pin
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