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    32N50Q

    Abstract: 4925 B transistor 125OC 30n50 728B1
    Text: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C


    Original     		PDF 32N50Q 125OC reserves10 728B1 123B1 728B1 065B1 32N50Q 4925 B transistor 125OC 30n50

    Untitled

    Abstract: No abstract text available
    Text: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C


    Original     		PDF 32N50Q 125OC reserves10 728B1 123B1 728B1 065B1