RENESAS tft application notes
Abstract: transistor marking A21 renesas sram marking
Text: Renesas LSIs RENESAS M6MGB/T64BS8AWG CONFIDENTIAL 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package) Description The RENESAS M6MGB/T64BS8AWG is a Stacked Chip Scale Package (S-CSP) that contents 64M-bit Flash memory
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M6MGB/T64BS8AWG
864-BIT
304-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T64BS8AWG
64M-bit
67-pin
RENESAS tft application notes
transistor marking A21
renesas sram marking
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transistor marking A21
Abstract: No abstract text available
Text: Renesas LSIs M6MGB/T64BS8BWG 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package) Description The RENESAS M6MGB/T64BS8BWG is suitable for a high performance cellular phone and a mobile PC that are
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M6MGB/T64BS8BWG
864-BIT
304-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T64BS8BWG
64M-bit
transistor marking A21
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transistor marking A19
Abstract: transistor marking A21 making a10
Text: Renesas LSIs M6MGB/T64BS8AWG-P 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package) Description The RENESAS M6MGB/T64BS8AWG-P is a Stacked Chip Scale Package (S-CSP) that contents 64M-bit Flash memory
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M6MGB/T64BS8AWG-P
864-BIT
304-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T64BS8AWG-P
64M-bit
67-pin
transistor marking A19
transistor marking A21
making a10
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Untitled
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M6MGB/T64BS4WG Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package)
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M6MGB/T64BS4WG
864-BIT
304-WORD
16-BIT)
304-BIT
144-WORD
M6MGB/T64BS4WG
64M-bit
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transistor marking A21
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M6MGB/T64BS8BWG Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package)
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M6MGB/T64BS8BWG
864-BIT
304-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T64BS8BWG
64M-bit
67-pin
transistor marking A21
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Untitled
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M6MGB/T33BS8BWG Notice: This is not a final specification. Some parametric limits are subject to change. 33,554,432-BIT 2,097,152-WORD BY 16-BIT CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package)
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M6MGB/T33BS8BWG
432-BIT
152-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T33BS8BWG
32M-bit
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Untitled
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M6MGB/T64BS8WG Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package)
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M6MGB/T64BS8WG
864-BIT
304-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T64BS8WG
64M-bit
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transistor marking A21
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M6MGB/T64BS8BWG-P Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package)
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M6MGB/T64BS8BWG-P
864-BIT
304-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T64BS8BWG-P
64M-bit
67-pin
transistor marking A21
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Untitled
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M6MGB/T33BS8BWG-P Notice: This is not a final specification. Some parametric limits are subject to change. 33,554,432-BIT 2,097,152-WORD BY 16-BIT CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package)
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M6MGB/T33BS8BWG-P
432-BIT
152-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T33BS8BWG-P
32M-bit
66-pin
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Untitled
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M6MGB/T33BS4BWG-P Notice: This is not a final specification. Some parametric limits are subject to change. 33,554,432-BIT 2,097,152-WORD BY 16-BIT CMOS FLASH MEMORY 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package)
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M6MGB/T33BS4BWG-P
432-BIT
152-WORD
16-BIT)
304-BIT
144-WORD
M6MGB/T33BS4BWG-P
32M-bit
66-pin
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MAKING A10
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M6MGB/T33BS8AWG-P Notice: This is not a final specification. Some parametric limits are subject to change. 33,554,432-BIT 2,097,152-WORD BY 16-BIT CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package)
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M6MGB/T33BS8AWG-P
432-BIT
152-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T33BS8AWG-P
32M-bit
66-pin
MAKING A10
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Untitled
Abstract: No abstract text available
Text: Renesas LSIs M6MGB/T64BS4AWG-P 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package) Description The M6MGB/T64BS4AWG-P is a Stacked Chip Scale Package (S-CSP) that contents 64M-bit Flash memory and
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M6MGB/T64BS4AWG-P
864-BIT
304-WORD
16-BIT)
304-BIT
144-WORD
M6MGB/T64BS4AWG-P
64M-bit
67-pin
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FA18 transistor
Abstract: No abstract text available
Text: Renesas LSIs M6MGB/T64BS4AWG 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package) Description The M6MGB/T64BS4AWG is a Stacked Chip Scale Package (S-CSP) that contents 64M-bit Flash memory and 4M-bit
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M6MGB/T64BS4AWG
864-BIT
304-WORD
16-BIT)
304-BIT
144-WORD
M6MGB/T64BS4AWG
64M-bit
67-pin
FA18 transistor
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32M Nonvolatile SRAM
Abstract: No abstract text available
Text: Renesas LSIs M6MGB/T32BS4AWG 33,554,432-BIT 2,097,152-WORD BY 16-BIT CMOS FLASH MEMORY 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package) Description The M6MGB/T32BS4AWG is suitable for a high performance cellular phone and a mobile PC that are required to be small
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M6MGB/T32BS4AWG
432-BIT
152-WORD
16-BIT)
304-BIT
144-WORD
M6MGB/T32BS4AWG
32M-bit
32M Nonvolatile SRAM
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32M Nonvolatile SRAM
Abstract: No abstract text available
Text: Renesas LSIs M6MGB/T32BS8WG 33,554,432-BIT 2,097,152-WORD BY 16-BIT CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package) Description The M6MGB/T32BS8WG is suitable for a high performance cellular phone and a mobile PC that are required to be small
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M6MGB/T32BS8WG
432-BIT
152-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T32BS8WG
32M-bit
32M Nonvolatile SRAM
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PD71055
Abstract: CMOS-9HD LSI CMOS GATE ARRAY uPD71054 PD71051 PD71054 CMOS8 ea-9hd
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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G0706
PD71055
CMOS-9HD
LSI CMOS GATE ARRAY
uPD71054
PD71051
PD71054
CMOS8
ea-9hd
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Mitsubishi Stacked CSP
Abstract: mitsubishi marking
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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R1Q2A3618BBG-40R
Abstract: R1Q3A3636BBG-60R R1Q2A3636BBG R1Q2A3618BBG-50R R1Q2A3618BBG-60R R1Q3A3618BBG-33R
Text: 90nm 36Mbit QDR -II & DDR-II SRAMs High-speed memory for Gigabit Ethernet networking The expanded range of standardscompliant, fast SRAMs in advanced 90nm technology offers more design solutions for high-speed packet buffering and packet look-up in Gigabit Ethernet networking
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36Mbit
36Mbit
R1Q2A3618BBG-40R
R1Q3A3636BBG-60R
R1Q2A3636BBG
R1Q2A3618BBG-50R
R1Q2A3618BBG-60R
R1Q3A3618BBG-33R
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67-PIN
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Hitachi Stacked CSP
Abstract: Mitsubishi Stacked CSP
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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T32BS8WG
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Mitsubishi Stacked CSP
Abstract: mitsubishi marking FA18 transistor
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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ieee1149.1 cypress
Abstract: P-LBGA165-15x17-1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2L TRANSISTOR
Abstract: marking code 576 R1Q4A3618BBG-33R R1Q4A3618BBG-40R R1Q4A3636B R1Q4A3636BBG-33R R1Q4A3636BBG-40R R1Q4A3636BBG-50R R1Q4A3636BBG-60R R1Q4A3618BBG-60R
Text: R1Q4A3636B/R1Q4A3618B 36-Mbit DDRII SRAM 2-word Burst REJ03C0343-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q4A3636B is a 1,048,576-word by 36-bit, the R1Q4A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It
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R1Q4A3636B/R1Q4A3618B
36-Mbit
REJ03C0343-0003
R1Q4A3636B
576-word
36-bit,
R1Q4A3618B
152-word
18-bit
165-pin
2L TRANSISTOR
marking code 576
R1Q4A3618BBG-33R
R1Q4A3618BBG-40R
R1Q4A3636BBG-33R
R1Q4A3636BBG-40R
R1Q4A3636BBG-50R
R1Q4A3636BBG-60R
R1Q4A3618BBG-60R
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