R1Q2A3618BBG-40R
Abstract: R1Q3A3636BBG-60R R1Q2A3636BBG R1Q2A3618BBG-50R R1Q2A3618BBG-60R R1Q3A3618BBG-33R
Text: 90nm 36Mbit QDR -II & DDR-II SRAMs High-speed memory for Gigabit Ethernet networking The expanded range of standardscompliant, fast SRAMs in advanced 90nm technology offers more design solutions for high-speed packet buffering and packet look-up in Gigabit Ethernet networking
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36Mbit
36Mbit
R1Q2A3618BBG-40R
R1Q3A3636BBG-60R
R1Q2A3636BBG
R1Q2A3618BBG-50R
R1Q2A3618BBG-60R
R1Q3A3618BBG-33R
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Untitled
Abstract: No abstract text available
Text: May 1997 ML6026 36 Mbps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The ML6026 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates up to 36Mbits/s, with an operating power dissipation of less than 350mW. Its
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ML6026
36Mbits/s,
350mW.
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SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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Untitled
Abstract: No abstract text available
Text: CY7C1460AV25 CY7C1462AV25 36-Mbit 1 M x 36/2 M × 18 Pipelined SRAM with NoBL Architecture 36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™
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CY7C1460AV25
CY7C1462AV25
36-Mbit
CY7C1460AV25/CY7C1462AV25
CY7C14s
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CY7C1355C
Abstract: No abstract text available
Text: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead
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CY7C1355C,
CY7C1357C
CY7C1355C/CY7C1357C
CY7C1355C
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Untitled
Abstract: No abstract text available
Text: CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features Configurations • 36-Mbit density 2 M x 18, 1 M × 36 CY7C1423KV18 – 2 M × 18 ■ 333 MHz clock for high bandwidth
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CY7C1423KV18/CY7C1424KV18
36-Mbit
CY7C1423KV18
CY7C1424KV18
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Untitled
Abstract: No abstract text available
Text: CY7C1243KV18/CY7C1245KV18 36-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.0 Cycle Read Latency 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions
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CY7C1243KV18/CY7C1245KV18
36-Mbit
CY7C1245KV18
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Untitled
Abstract: No abstract text available
Text: CY7C2268KV18/CY7C2270KV18 36-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency with ODT 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations • 36-Mbit density (2 M x 18, 1 M × 36)
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CY7C2268KV18/CY7C2270KV18
36-Mbit
CY7C2268KV18
CY7C2270KV18
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HM66AQB18202
Abstract: HM66AQB18202BP-40 HM66AQB36102 HM66AQB36102BP-40 HM66AQB36102BP-50 HM66AQB36102BP-60 HM66AQB9402
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
D-85619
HM66AQB18202
HM66AQB18202BP-40
HM66AQB36102
HM66AQB36102BP-40
HM66AQB36102BP-50
HM66AQB36102BP-60
HM66AQB9402
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AG29
Abstract: ipug45_01.5 transistor w1d transistor w4B SRAM SAMSUNG FC1152 3ah22
Text: ispLever CORE TM QDRII+ SRAM Controller MACO Core User’s Guide June 2008 ipug45_01.5 QDRII+ SRAM Controller MACO Core User’s Guide Lattice Semiconductor Introduction Lattice’s QDRII and QDRII+ QDRII/II+ SRAM Controller MACO core assists the FPGA designer’s efforts by
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ipug45
AG29
ipug45_01.5
transistor w1d
transistor w4B
SRAM SAMSUNG
FC1152
3ah22
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DS16
Abstract: MC8051M36 MC8051M36L-7R5VI
Text: MC8051M36 36-Mbit: 1Mx36 MOSYS Symmetric Pipelined Burst SRAM The MC8051M36 is packaged in a standard 100 lead LQFP. Lowest Power The MC8051M36 affords systems dramatic power savings due to the benefits of its proprietary MoSys technology. Making it ideal for convection cooled applications, as well as
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MC8051M36
36-Mbit:
1Mx36
MC8051M36
DS16
MC8051M36L-7R5VI
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IC1210-m128LQ
Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD44324082, 44324092, 44324182, 44324362 36M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The µPD44324082 is a 4,194,304-word by 8-bit, the µPD44324092 is a 4,194,304-word by 9-bit, the µPD44324182 is a 2,097,152-word by 18-bit and the µPD44324362 is a 1,048,576-word by 36-bit synchronous double data rate static RAM
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PD44324082,
36M-BIT
PD44324082
304-word
PD44324092
PD44324182
152-word
18-bit
PD44324362
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GS8322ZV18
Abstract: GS8322ZV18B GS8322ZV72
Text: GS8322ZV18 B/E /GS8322ZV36(B/E)/GS8322ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and
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GS8322ZV18
/GS8322ZV36
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8322ZV18
8322ZVxx
GS8322ZV18B
GS8322ZV72
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ieee1149.1 cypress
Abstract: P-LBGA165-15x17-1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: Preliminary GS8322Z18/36A B/D -400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAM 119 & 165 BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and
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GS8322Z18/36A
8322ZxxA
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Untitled
Abstract: No abstract text available
Text: M ay 1997 ^ÉL Micro Linear ML6026 36 Mbps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The ML6026 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates up to 36Mbits/s, with
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ML6026
ML6026
36Mbits/s,
350mW.
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L6026
Abstract: No abstract text available
Text: M ay 1997 % M ic r o L in e a r ML6026 36 Mbps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The M L6026 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates up to 36Mbits/s, with
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ML6026
-45dB
350mW
L6026
ML6026
M16026CR
20-Pin
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M 1591 DN
Abstract: No abstract text available
Text: July 1992 PRELIMINARY Micro Linear ML6006 36 Mbps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The ML6006 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates upto 36Mbits/s, with
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ML6006
36Mbits/s,
350mW.
ML6006
ML6005CR
20-Pin
M 1591 DN
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Untitled
Abstract: No abstract text available
Text: June 1996 M g L M ic r o L in e a r ML6026 36 Mbps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The ML6026 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates upto 36Mbits/s, with
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ML6026
ML6026
36Mbits/s,
350mW.
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M 1591 DN
Abstract: ML6006
Text: juiy iyyz fllk Micro Linear PREMN ARY ^ ML6006 36 M bps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The ML6006 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates upto 36Mbits/s, with
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ML6006
36Mbits/s,
350mW.
ML6006
ML6005CR
20-Pin
M 1591 DN
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cx 2025
Abstract: No abstract text available
Text: April 1994 3 ^ Micro Linear ML6026 36 Mbps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The ML6026 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates upto 36Mbits/s, with
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ML6026
36Mbits/s,
350mW.
ML6026
ML6026CR
20-Pin
cx 2025
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Untitled
Abstract: No abstract text available
Text: July 1992 PRELIM INARY M icro Linear ML6006 36 Mbps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The M L6006 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates upto 36Mbits/s, with
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ML6006
L6006
36Mbits/s,
350mW.
000dB
ML6005CR
20-Pin
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