Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLER PS2845-4A WORLD’S SMALLEST CLASS, FOUR CHANNELS 12-PIN ULTRA SHRINK SOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2845-4A is an optically coupled isolator containing GaAs light emitting diodes and NPN silicon phototransistors.
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PS2845-4A
12-PIN
PS2845-4A
PS280x
PS281x
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLER PS2841-4A,PS2841-4B WORLD’S SMALLEST CLASS, FOUR CHANNELS 12-PIN ULTRA SHRINK SOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2841-4A and PS2841-4B are optically coupled isolators containing GaAs light emitting diodes and NPN
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PS2841-4A
PS2841-4B
12-PIN
PS2841-4B
PS280x
PS281x
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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ieee1149.1 cypress
Abstract: P-LBGA165-15x17-1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RENESAS MARKING CQ
Abstract: No abstract text available
Text: Datasheet R1QAA4436RBG,R1QAA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency R10DS0137EJ0100 Rev.1.00 Oct 10, 2012 Description The R1QAA4436RBG is a 4,194,304-word by 36-bit and the R1QAA4418RBG is a 8,388,608-word by 18-bit
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R1QAA4436RBG
R1QAA4418RBG
144-Mbit
304-word
36-bit
R1QAA4418RBG
608-word
18-bit
165-pin
RENESAS MARKING CQ
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Untitled
Abstract: No abstract text available
Text: Datasheet R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0144EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit
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R1QLA4436RBG,
R1QLA4418RBG
144-Mbit
R10DS0144EJ0100
R1QLA4436RBG
304-word
36-bit
R1QLA4418RBG
608-word
18-bit
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Untitled
Abstract: No abstract text available
Text: Datasheet R1QHA4436RBG,R1QHA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency R10DS0145EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QHA4436RBG is a 4,194,304-word by 36-bit and the R1QHA4418RBG is a 8,388,608-word by 18-bit
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R1QHA4436RBG
R1QHA4418RBG
144-Mbit
R10DS0145EJ0100
304-word
36-bit
R1QHA4418RBG
608-word
18-bit
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R1QDA4418RBG-19IB0
Abstract: RENESAS MARKING CQ RENESAS Marking is "cq" RENESAS MARKING AB
Text: Datasheet R1QDA4436RBG,R1QDA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0136EJ0100 Rev.1.00 Oct 10, 2012 Description The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit
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R1QDA4436RBG
R1QDA4418RBG
144-Mbit
304-word
36-bit
R1QDA4418RBG
608-word
18-bit
165-pin
R1QDA4418RBG-19IB0
RENESAS MARKING CQ
RENESAS Marking is "cq"
RENESAS MARKING AB
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Untitled
Abstract: No abstract text available
Text: Datasheet R1QAA4436RBG,R1QAA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency R10DS0137EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QAA4436RBG is a 4,194,304-word by 36-bit and the R1QAA4418RBG is a 8,388,608-word by 18-bit
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R1QAA4436RBG
R1QAA4418RBG
144-Mbit
R10DS0137EJ0201
304-word
36-bit
R1QAA4418RBG
608-word
18-bit
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R1QDA4436RBG
Abstract: No abstract text available
Text: Datasheet R1QDA4436RBG,R1QDA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0136EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit
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R1QDA4436RBG
R1QDA4418RBG
144-Mbit
R10DS0136EJ0201
304-word
36-bit
R1QDA4418RBG
608-word
18-bit
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Untitled
Abstract: No abstract text available
Text: Datasheet R1QBA4436RBG,R1QBA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.5 Cycle Read latency R10DS0143EJ0100 Rev.1.00 Oct 21, 2013 Description The R1QBA4436RBG is a 4,194,304-word by 36-bit and the R1QBA4418RBG is a 8,388,608-word by 18-bit
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R1QBA4436RBG
R1QBA4418RBG
144-Mbit
R10DS0143EJ0100
304-word
36-bit
R1QBA4418RBG
608-word
18-bit
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Untitled
Abstract: No abstract text available
Text: R1QAA72 / R1QDA72 Series R1QAA7236ABG / R1QAA7218ABG / R1QAA7209ABG R1QDA7236ABG / R1QDA7218ABG / R1QDA7209ABG R1QGA7236ABG / R1QGA7218ABG / R1QGA7209ABG R1QKA7236ABG / R1QKA7218ABG / R1QKA7209ABG
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0000---QDRII+
R1QAA72
R1QDA72
R1QAA7236ABG
R1QAA7218ABG
R1QAA7209ABG
R1QDA7236ABG
R1QDA7218ABG
R1QDA7209ABG
R1QGA7236ABG
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Untitled
Abstract: No abstract text available
Text: Datasheet R1QGA4436RBG,R1QGA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.0 Cycle Read latency R10DS0139EJ0200 Rev.2.00 Jun 01, 2013 Description The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit
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R1QGA4436RBG
R1QGA4418RBG
144-Mbit
R10DS0139EJ0200
304-word
36-bit
R1QGA4418RBG
608-word
18-bit
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Untitled
Abstract: No abstract text available
Text: Datasheet R1QKA4436RBG,R1QKA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0138EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QKA4436RBG is a 4,194,304-word by 36-bit and the R1QKA4418RBG is a 8,388,608-word by 18-bit
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R1QKA4436RBG
R1QKA4418RBG
144-Mbit
R10DS0138EJ0201
304-word
36-bit
R1QKA4418RBG
608-word
18-bit
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2L TRANSISTOR
Abstract: marking code 576 R1Q4A3618BBG-33R R1Q4A3618BBG-40R R1Q4A3636B R1Q4A3636BBG-33R R1Q4A3636BBG-40R R1Q4A3636BBG-50R R1Q4A3636BBG-60R R1Q4A3618BBG-60R
Text: R1Q4A3636B/R1Q4A3618B 36-Mbit DDRII SRAM 2-word Burst REJ03C0343-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q4A3636B is a 1,048,576-word by 36-bit, the R1Q4A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It
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R1Q4A3636B/R1Q4A3618B
36-Mbit
REJ03C0343-0003
R1Q4A3636B
576-word
36-bit,
R1Q4A3618B
152-word
18-bit
165-pin
2L TRANSISTOR
marking code 576
R1Q4A3618BBG-33R
R1Q4A3618BBG-40R
R1Q4A3636BBG-33R
R1Q4A3636BBG-40R
R1Q4A3636BBG-50R
R1Q4A3636BBG-60R
R1Q4A3618BBG-60R
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2L TRANSISTOR
Abstract: R1Q3A3618BBG-33R R1Q3A3636B R1Q3A3636BBG-33R R1Q3A3636BBG-40R R1Q3A3636BBG-50R R1Q3A3636BBG-60R
Text: R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit QDR II SRAM 4-word Burst REJ03C0342-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q3A3636B is a 1,048,576-word by 36-bit, the R1Q3A3618B is a 2,097,152-word by 18-bit, and the R1Q3A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS
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R1Q3A3636B/R1Q3A3618B/R1Q3A3609B
36-Mbit
REJ03C0342-0003
R1Q3A3636B
576-word
36-bit,
R1Q3A3618B
152-word
18-bit,
R1Q3A3609B
2L TRANSISTOR
R1Q3A3618BBG-33R
R1Q3A3636BBG-33R
R1Q3A3636BBG-40R
R1Q3A3636BBG-50R
R1Q3A3636BBG-60R
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R1Q2A7236
Abstract: No abstract text available
Text: R1Q2A7236 / R1Q2A7218 / R1Q2A7209 Series R1Q2A7236ABG Series R1Q2A7218ABG Series R1Q2A7209ABG Series 72-Mbit QDR II SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the
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R1Q2A7236
R1Q2A7218
R1Q2A7209
R1Q2A7236ABG
R1Q2A7218ABG
R1Q2A7209ABG
72-Mbit
152-word
36-bit,
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fbga 15x17
Abstract: fbga 15x17 tray KA Finance activities R1Q5A3618B R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A3636B R1Q5A3636BBG-33R R1Q5A3636BBG-40R R1Q5A3636BBG-50R
Text: R1Q5A3636B/R1Q5A3618B 36-Mbit DDRII SRAM 4-word Burst REJ03C0344-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q5A3636B is a 1,048,576-word by 36-bit, the R1Q5A3618B is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It
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R1Q5A3636B/R1Q5A3618B
36-Mbit
REJ03C0344-0003
R1Q5A3636B
576-word
36-bit,
R1Q5A3618B
152-word
18-bit
165-pin
fbga 15x17
fbga 15x17 tray
KA Finance activities
R1Q5A3618BBG-33R
R1Q5A3618BBG-40R
R1Q5A3636BBG-33R
R1Q5A3636BBG-40R
R1Q5A3636BBG-50R
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Abstract: No abstract text available
Text: R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit QDR II SRAM 4-word Burst REJ03C0342-0004 Preliminary Rev. 0.04 Oct.22, 2008 Description The R1Q3A3636B is a 1,048,576-word by 36-bit, the R1Q3A3618B is a 2,097,152-word by 18-bit, and the R1Q3A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS
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R1Q3A3636B/R1Q3A3618B/R1Q3A3609B
36-Mbit
REJ03C0342-0004
R1Q3A3636B
576-word
36-bit,
R1Q3A3618B
152-word
18-bit,
R1Q3A3609B
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Untitled
Abstract: No abstract text available
Text: R1QAA36*CB* / R1QDA36*CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG
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0000---QDRII+
R1QAA36*
R1QDA36*
R1QAA3636CBG
R1QAA3618CBG
R1QAA3609CBG
R1QDA3636CBG
R1QDA3618CBG
R1QDA3609CBG
R1QGA3636CBG
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Abstract: No abstract text available
Text: R1QCA36*CB* / R1QFA36*CB* Series R1QCA3636CBG / R1QCA3618CBG / R1QCA3609CBG R1QFA3636CBG / R1QFA3618CBG / R1QFA3609CBG R1QJA3636CBG / R1QJA3618CBG / R1QJA3609CBG R1QMA3636CBG / R1QMA3618CBG / R1QMA3609CBG
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0000---DDRII+
R1QCA36*
R1QFA36*
R1QCA3636CBG
R1QCA3618CBG
R1QCA3609CBG
R1QFA3636CBG
R1QFA3618CBG
R1QFA3609CBG
R1QJA3636CBG
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Untitled
Abstract: No abstract text available
Text: - 00000.0000.0000.0000.0000-QDRII+_RL20 R1QGA36*CB* / R1QKA36*CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG
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0000--QDRII+
R1QGA36*
R1QKA36*
R1QAA3636CBG
R1QAA3618CBG
R1QAA3609CBG
R1QDA3636CBG
R1QDA3618CBG
R1QDA3609CBG
R1QGA3636CBG
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Untitled
Abstract: No abstract text available
Text: R1QBA72 / R1QEA72 Series R1QBA7236ABG / R1QBA7218ABG / R1QBA7209ABG R1QEA7236ABG / R1QEA7218ABG / R1QEA7209ABG R1QHA7236ABG / R1QHA7218ABG / R1QHA7209ABG R1QLA7236ABG / R1QLA7218ABG / R1QLA7209ABG 72-Mbit DDRII+ SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description
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R1QBA72
R1QEA72
R1QBA7236ABG
R1QBA7218ABG
R1QBA7209ABG
R1QEA7236ABG
R1QEA7218ABG
R1QEA7209ABG
R1QHA7236ABG
R1QHA7218ABG
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Untitled
Abstract: No abstract text available
Text: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
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R1Q4A4436RBG,
R1Q4A4418RBG
144-Mbit
R10DS0146EJ0101
R1Q4A4436RBG
304-word
36-bit
R1Q4A4418RBG
608-word
18-bit
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