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    Renesas Electronics Corporation R1Q3A3636BBG33YB0

    Standard SRAM, 1MX36, 0.45ns, CMOS, PBGA165
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    R1Q3A3636B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    R1Q3A3636B Renesas Technology 36-Mbit QDR II SRAM 4-word Burst Original PDF
    R1Q3A3636BBG-33R Renesas Technology 36-Mbit QDR II SRAM 4-word Burst Original PDF
    R1Q3A3636BBG-40R Renesas Technology 36-Mbit QDR II SRAM 4-word Burst Original PDF
    R1Q3A3636BBG-50R Renesas Technology 36-Mbit QDR II SRAM 4-word Burst Original PDF

    R1Q3A3636B Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit QDR II SRAM 4-word Burst REJ03C0342-0004 Preliminary Rev. 0.04 Oct.22, 2008 Description The R1Q3A3636B is a 1,048,576-word by 36-bit, the R1Q3A3618B is a 2,097,152-word by 18-bit, and the R1Q3A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS


    Original     		PDF R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit REJ03C0342-0004 R1Q3A3636B 576-word 36-bit, R1Q3A3618B 152-word 18-bit, R1Q3A3609B

    Untitled

    Abstract: No abstract text available
    Text: R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit QDR II SRAM 4-word Burst REJ03C0342-0001 Preliminary Rev. 0.01 Jan. 31, 2008 Description The R1Q3A3636B is a 1,048,576-word by 36-bit, the R1Q3A3618B is a 2,097,152-word by 18-bit, and the R1Q3A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS


    Original     		PDF R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit REJ03C0342-0001 R1Q3A3636B 576-word 36-bit, R1Q3A3618B 152-word 18-bit, R1Q3A3609B

    2L TRANSISTOR

    Abstract: R1Q3A3618BBG-33R R1Q3A3636B R1Q3A3636BBG-33R R1Q3A3636BBG-40R R1Q3A3636BBG-50R R1Q3A3636BBG-60R
    Text: R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit QDR II SRAM 4-word Burst REJ03C0342-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q3A3636B is a 1,048,576-word by 36-bit, the R1Q3A3618B is a 2,097,152-word by 18-bit, and the R1Q3A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS


    Original     		PDF R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit REJ03C0342-0003 R1Q3A3636B 576-word 36-bit, R1Q3A3618B 152-word 18-bit, R1Q3A3609B 2L TRANSISTOR R1Q3A3618BBG-33R R1Q3A3636BBG-33R R1Q3A3636BBG-40R R1Q3A3636BBG-50R R1Q3A3636BBG-60R

    ieee1149.1 cypress

    Abstract: P-LBGA165-15x17-1
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    R1Q2A3618BBG-40R

    Abstract: R1Q3A3636BBG-60R R1Q2A3636BBG R1Q2A3618BBG-50R R1Q2A3618BBG-60R R1Q3A3618BBG-33R
    Text: 90nm 36Mbit QDR -II & DDR-II SRAMs High-speed memory for Gigabit Ethernet networking The expanded range of standardscompliant, fast SRAMs in advanced 90nm technology offers more design solutions for high-speed packet buffering and packet look-up in Gigabit Ethernet networking


    Original     		PDF 36Mbit 36Mbit R1Q2A3618BBG-40R R1Q3A3636BBG-60R R1Q2A3636BBG R1Q2A3618BBG-50R R1Q2A3618BBG-60R R1Q3A3618BBG-33R

    HN58V1001TI-25E

    Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
    Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,


    Original     		PDF REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI