4074418H
Abstract: No abstract text available
Text: H D 404418 Series Description The HD404418 Series of 4-bit single-chip micro computers are basically equivalent to the HMCS400 series providing high programming productivity and high-speed operation. The devices incorporate ROM , RAM , I/O, four timer/counters, and two
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HD404418
HMCS400
HD4074418
HD4074408
27256compatib
HD4074418C
4074418H
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TX2N1724
Abstract: 2N1724 2N1722 ADE350
Text: M IL -S -1 9 5 0 0 /2 6 2 F 19 February 196? SUPERSEDING M IL -S -1 9 5 0 0 /2 6 2 E 25 O ctober 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, HIGH-POWER T Y PE S 2N 1722, TX2N 1722, 2N 1724, AND TX2N 1724 T h is sp e c ific a tio n i s m andatory fo r u s e by a ll D ep a r t
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MIL-S-19500/262F
MIL-S-19500/262E
2N1722,
TX2N1722,
2N1724,
TX2N1724
1969-343-225/J16
TX2N1724
2N1724
2N1722
ADE350
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NT R03C
Abstract: 4074418H HD4074408S RBDR wq 0233 tlr2u MARKING 4FL HD4074418F R13C HD404418F
Text: H D 404418 Series Description The HD404418 Series of 4-bit single-chip micro computers are basically equivalent to the HMCS400 series providing high programming productivity and high-speed operation. The devices incorporate ROM , RAM , I/O, four timer/counters, and two
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HD404418
HMCS400
HD4074418
HD4074408
27256-compatible.
NT R03C
4074418H
HD4074408S
RBDR
wq 0233
tlr2u
MARKING 4FL
HD4074418F
R13C
HD404418F
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TIP-52
Abstract: tip51 tip54 TIP52
Text: TEXAS INSTR -C0PT03- Ô 961726 i. ' t * TEXAS bE IN S T R DE B ô T t i l T B h □□3bfl3D 62C 3 6 8 3 0 O P T O TIP51, TIP52, TIP53, TIP54 N-P-N SILICON POWER TRANSISTORS T - *• R E V IS E D O C T O B E R 1 9 8 4 • 1 0 0 W at 2 5 ° C Case Tem perature
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-C0PT03-
TIP51,
TIP52,
TIP53,
TIP54
TIP-52
tip51
TIP52
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KM428C257
Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Text: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual
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KM428C257
256KX
512x8
110ns
130ns
150ns
110mA
100mA
40-PIN
40/44-PIN
KM428C257
XAL W6
MAS 10 RCD
sc 4145
CNR 14 V 471 K
CA278
CI008
On Screen Display Samsung
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BB-2225-X
Abstract: No abstract text available
Text: I DRWG. NO. ±.015 OUST. DRWG. 196 . T -f^ 'T_' i i I I , i i i 1 L 4— PART NO. A A- 2 2 2 2 AA-2222-X A A -2 2 2 3 AA-2223-X B B- 22 24 BB-2224-X BB-2225 BB-2225-X AWG 22- 18 22- 18 22- 18 22- 18 16- 14 16- 14 16- 14 16- 14 COLOR MWID TAB S I Z E . 176/4.47
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AA-2222
AA-2222-X
AA-2223
AA-2223-X
BB-2224
BB-2224-X
BB-2225
BB-2225-X
I87xn020?
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TRANSISTOR BDX 286
Abstract: 2N3439 transistor TIP 350 2n344o 1N914 2N3440 TEXAS 2N3439 2n3439 TEXAS INSTRUMENTS TIP 525
Text: TYPES 2N3439, 2N3440 N-P-N SILICON POWER TRANSISTORS H IGH-VO LTAGE POWER TRA N SISTO RS DESIGN ED FO R IN D U STRIA L AND M ILIT A R Y APPLICATIONS • Min V B R CEO ° f 350 V (2N3439) • Max VcE(sat) ° f 0-5 V at lc = 50 mA • Min f j of 15 MHz at 10 V , 20 mA
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2N3439,
2N3440
2N3439)
2N3439
TRANSISTOR BDX 286
transistor TIP 350
2n344o
1N914
2N3440
TEXAS 2N3439
2n3439 TEXAS INSTRUMENTS
TIP 525
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CY7C199-25PC
Abstract: 2218 8 PIN DIP C19S 7C199-15 7C199-20 7C199-25 CY7C199 CE12U
Text: St •ss CY7C199 CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tj>oE T he CY7C199 is a high-perform ance CM OS static RAM organized as 32,768 words by 8 bits. Easy m em ory expansion is provided by an active LO W chip enable
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CY7C199
CY7C199
300-mil-wide
00239-B
CY7C199-25PC
2218 8 PIN DIP
C19S
7C199-15
7C199-20
7C199-25
CE12U
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BB-239-08X
Abstract: I90700 BB-237-06X BB-2I8-38X
Text: 10 19070 VIATERIAL NO. LOOSE PIECE I90 7 0 0 0 5 4 I90 7 0 0 0 5 7 I90 7 0 0 0 5 9 I9 0 7 0 0 0 6 3 B B -2 I8 -I0 X B B-2 I8 -I4 X B B - 2 I8 - 3 8 X B B - 2 I8 - 5 G X I9 0 7 0 0 0 6 5 I9 0 7 0 0 0 6 7 I9 0 7 0 0 0 6 9 I9 0 7 0 0 0 7 I I90 7 0 0 0 7 3 I90 7 0 0 0 7 5
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I90700054
I90700057
I90700058
I90700059
BB-2I8-38X
I9070006
BB-2I8-56XT^
I90700063
I90700064
BB-2I8-38XT^
BB-239-08X
I90700
BB-237-06X
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - B R O W N « SHC605 1 I DEMO BOARD AVAILABLE See Appendix A • LOW ACQUISITION TIME: 30ns to 0.01% • LOW DROOP RATE: 8mV/|as max T MIN to T max • LOW POWER CONSUMPTION: 335mW • EXTREMELY VERSATILE ARCHITECTURE:
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SHC605
335mW
16-Lead
17313b5
G032DS1
0Q32052
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Untitled
Abstract: No abstract text available
Text: W g * CYPRESS 32K x 8 3.3V Static RAM Features Functional Description • Single 3.3V power supply T he CY7C1399 is a high-perform ance 3.3V CM O S static R A M organized as 32,768 w ords by 8 bits. Easy m em ory ex pansion is provided by an active LO W chip
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CY7C1399
CY7C1399
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3055 5C pnp transistor
Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
Text: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •
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TIP110,
TIP111,
TIP112
TIP115,
TIP116,
TIP117
25-mJ
TIP110
TIP111
3055 5C pnp transistor
tip 212
tip 127 texas instruments
cd 5151 cd
darlington complementary power amplifier tip 142
TIP 42 transistor
darlington circuit tip 42
tip darlington pnp
tlp111
transistor tip 3055
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MCM4132L20
Abstract: pir 325 MCM4116 MCM4132L15 MCM4132L25 MCM4132L30
Text: - r ? M O TO R O LA MCM4132 3 2 ,7 6 8 x 1 BIT D Y N A M IC R AM MOS T h e M C M 4 1 3 2 is a 3 2 ,7 6 8 -b it h ig h -s p e e d D y n a m ic R a n d o m A c c e s s M e m o ry d e s ig n e d fo r h ig h -p e rfo r m a n c e , lo w - c o s t a p p lic a tio n s in m a in
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MCM4132
MCM4132
768-bit
MCM4116
384-bit
18-pin
MCM4132L20
pir 325
MCM4132L15
MCM4132L25
MCM4132L30
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c2689
Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
Text: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n
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MIL-S-19500/447
2N5926
TX2N5926
0D13flS7
MiL-S-l9500/447
5961-A340
c2689
Z027
diode cc 3053
diode Z027
cc 3053
npn marking tx
TX2N5926
transistor AS 431
tx transistor
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /IPD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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/IPD4502161
PD4502161
152-bit
50-pin
S50G5-80-7JF3
PD4502161
PD4502161.
PD4502161G5-7JF:
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D1186
Abstract: MB89251 REM BB2
Text: MB86940 FUJITSU 930 Series Companion Chip DATASHEET FEA TU RES AUGUST 1994 _ • Integrated Interrupt Request Controller, Timer, and Serial D ata Transmitter/Receiver • 930 Series processor interface • 40 MHz operation
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MB86940
MB86940
PGA-135P-M01)
MB86940CPR-G
FPT-144P-M03)
MB86940CPFV-G-BND
D1186
MB89251
REM BB2
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mpd416c
Abstract: UPD416 PD416D oq 0051 nec D416 PD416-5 MPD416D
Text: jjpù4i y piPD416-1 /¿PD416-2 fiPD416-3 ^PD416-5 NEC Electronics U.S.A. Inc. Microcomputer Division 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY DESCRIPTION T h e N E C /uPD41 6 is a 16384 w ords by 1 b it D y n a m ic M O S R A M . It is designed fo r
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piPD416-1
uPD416-2
uPD416-3
uPD416-5
/uPD41
1PD416
MPD416D
PD416
PD416D
mpd416c
UPD416
oq 0051
nec D416
PD416-5
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P3055E
Abstract: motorola p3055e p23p06 2N3804 9439 2n P3055EL zener 1n 4148 1N4148H av dc tec ne 5231B diode
Text: B EN C H M AR Q _ Using the bq2005 to Control Fast Charge Introduction T his application note describes th e use a n d functions of th e bq2005 con tro llin g a c u rre n t source to fa st ch arg e N iC d o r N iM H b a tte rie s. T h e bq2005 m ay also se rv e a s
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bq2005
bq2005
197-103LA6-A01
C100Y103J
P3055E
motorola p3055e
p23p06
2N3804
9439 2n
P3055EL
zener 1n 4148
1N4148H
av dc tec ne
5231B diode
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B-237-08XT
Abstract: 220-04XT B-237-08X
Text: 10 \ 9 LOOSE PIEC E F MATERIA L NUMBER I90 7 0 0 0 0 5 ALTERNATE NUMBER AA-220-02X AA-220-04X AA-220-06X A A -2 2 I-06X I90 7 0 0 0 I3 AA-22I-08X I 9 0 7 0 0 0 I 5 A A -2 2 I-IOX I9 0 7 0 0 0 I9 AA -22I-209X I 9 0 7 0 0 0 2 I A A - 2 2 2 - IO X I 9 0 7 0 0 0 2 3 A A - 2 2 2 - I4X
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I90700022
I90700027
I90700032
I90700037
I90700035
I90700039
I90700042
I90700045
I90700052
I90700002
B-237-08XT
220-04XT
B-237-08X
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT JuPD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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uPD4502161
PD4502161
152-bit
50-pin
S50G5-80-7JF3
PD4502161
PD4502161.
PD4502161G5-7JF:
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a1s smd
Abstract: SMD A1S
Text: CYM1832 if CYPRESS 64K x 32 Static RAM Module Features F unctional D escription • High-density 2-Mbit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • Low active power — 5.4W max. • SMD technology • TTL-compatible inputs and outputs
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CYM1832
CYM1832
64Kx4
CYM1832PZâ
60-Pin
CYM1832PZ-35C
a1s smd
SMD A1S
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HO-12C-14.31818MHZ
Abstract: No abstract text available
Text: TCD5340C GENERAL TCD5340C is a fram e interline CCD area image sensor developed fo r a 3-CCD color camera NTSC TV system . This device has signal pixels o f 1163 (horizontal) x 492 (vertical), and its image size agrees w ith 2 / 3 inch type optical system.
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TCD5340C
TCD5340C
QQ213A7
QD513fifl
HO-12C-14.31818MHZ
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ISD 1720
Abstract: CYM1720
Text: CYM1720 p / CYPRESS Features • High-density 768-kilobit SRAM module • High-speed CMOS SRAMs — Access time of 15 ns • 56-pin, 0.5-inch-high ZIP package • Low active power — 1.8W max. for t\A = 25 ns • SMD technology • TTL-compatible inputs and outputs
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CYM1720
768-kilobit
56-pin,
CYM1720
CYM1720PZâ
56-Pin
ISD 1720
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737R
Abstract: ilpi 127 P243I i1017 IDT71589 IDT71B74 IDT74FCT16373 pin diagram intel i3 processor 7mb6091sxxk IDT7MB6091
Text: PRELIMINARY IDT7MB6091 128KB SECONDARY CACHE MODULE FOR THE INTEL i486™ Integrated Device Technology» Inc. FEATURES: DESCRIPTION: • Pin com patible w ith ttie Intel 485Turbocache™ 82485M B The IDT7M B6091 is a pin com patible re placem ent fo r the
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128KB
IDT7MB6091
485Turbocacheâ
82485MB
i486-based
485Turbocache
IDT71589
IDT71B74
33MHz
737R
ilpi 127
P243I
i1017
IDT74FCT16373
pin diagram intel i3 processor
7mb6091sxxk
IDT7MB6091
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