Untitled
Abstract: No abstract text available
Text: RECTRON SEMICONDUCTOR BAS21 TECHNICAL SPECIFICATION SURFACE MOUNT DIODE SOT-23 Absolute Maximum Items Reverse Voltage Reverse Recovery Time Forward Voltage @ If = 100 mA Forward Current 1 Junction Temp. Storage Temp. Ratings (Ta=25°C) Symbol Ratings VRRM
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BAS21
OT-23
OT-23
100uA
100mA
200mA
583-BAS21-T
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Untitled
Abstract: No abstract text available
Text: SF161CS RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION SF166CS GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 16 Amperes FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability Super fast switching speed
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SF161CS
SF166CS
MIL-STD-202E
300uS
SF161CS
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DTA143EKA
Abstract: No abstract text available
Text: RECTRON SEMICONDUCTOR DTA143EKA TECHNICAL SPECIFICATION SOT-23-3L DIGITAL TRANSISTORS TRANSISTORS PNP FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit).
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DTA143EKA
OT-23-3L
OT-23-3L
DTA143EKA
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SD101AWS
Abstract: No abstract text available
Text: RECTRON SEMICONDUCTOR SD101AWS TECHNICAL SPECIFICATION SCHOTTKY DIODES FEATURES * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Negligible Reverse Recovery Time SOD-323 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant
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SD101AWS
OD-323
MIL-STD-202E
SD101AWS
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CMBD914
Abstract: SD914
Text: RECTRON SEMICONDUCTOR CMBD914 TECHNICAL SPECIFICATION SOT-23 Absolute Maximum Ratings Ta=25°C ITEMS Symbol Ratings Unit Reverse Voltage VR 75 V Reverse trr 4 ns Recovery Time Forward Voltage VF 1.0 V @ If = 10 mA Forward Current IF 200 mA Junction Temp.
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CMBD914
OT-23
100uA
SD914.
CMBD914
SD914
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100MHZ
Abstract: BCW61B
Text: RECTRON BCW61B SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation SOT-23 COLLECTOR MECHANICAL DATA * * * * * 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed
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BCW61B
OT-23
OT-23
MIL-STD-202E
100MHZ
BCW61B
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BAT85 equivalent
Abstract: BAT85
Text: RECTRON BAT85 SEMICONDUCTOR TECHNICAL SPECIFICATION SCHOTTKY DIODES FEATURES * Fast Switching Device TRR<4.0nS * DO-35 Package (JEDEC) * Through-Hole Device Type Mounting * Hermetically Sealed Glass * Compression Bonded Construction * All external surfaces are corrosion resistant and leads
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BAT85
DO-35
DO-35
100mA)
BAT85 equivalent
BAT85
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RL151G
Abstract: RL152G RL153G RL154G RL155G RL157G
Text: RL151G RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION RL157G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-15 MECHANICAL DATA
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RL151G
RL157G
DO-15
MIL-STD-202E
RL151G
RL152G
RL153G
RL154G
RL155G
RL157G
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125OC
Abstract: MMBT2907LT1
Text: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range
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MMBT2907LT1
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
CHARA10
125OC
MMBT2907LT1
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RS601M
Abstract: RS602M RS603M RS604M RS605M RS606M RS607M RS604
Text: RS601M RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION RS607M SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes FEATURES * * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 200 amperes peak
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RS601M
RS607M
300us
RS601M
RS602M
RS603M
RS604M
RS605M
RS606M
RS607M
RS604
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1SS187
Abstract: No abstract text available
Text: RECTRON 1SS187 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
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1SS187
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
1SS187
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50MHZ
Abstract: BC808
Text: RECTRON BC808 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 200 mW (Tamb=25OC) * Collector current ICM : 500 mA * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range
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BC808
OT-23
150OC
OT-23
MIL-STD-202E
012applications
50MHZ
BC808
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1SS193
Abstract: No abstract text available
Text: RECTRON 1SS193 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
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1SS193
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
1SS193
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125OC
Abstract: BAS70WS
Text: RECTRON BAS70WS SEMICONDUCTOR TECHNICAL SPECIFICATION SCHOTTKY DIODES FEATURES * Fast Switching Speed * Low turn-on voltage * PN Junction Guard for Transient and ESD Protection * Designed for Surface Mount Application * Plastic Material-UL Recognition Flammability
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BAS70WS
OD-323
MIL-STD-202E
125OC
BAS70WS
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BAT54S
Abstract: No abstract text available
Text: RECTRON SEMICONDUCTOR BAT54S TECHNICAL SPECIFICATION SOT-23 SCHOTTKY DIODE FEATURES * Power Dissipation PD : 200mW Tamb= 25 OC SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed
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BAT54S
OT-23
200mW
OT-23
MIL-STD-202E
BAT54S
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125OC
Abstract: SD101CW
Text: RECTRON SD101CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Negligible Reverse Recovery Time SOD-123 MECHANICAL DATA Case: Molded plastic
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SD101CW
OD-123
MIL-STD-202E
125OC
SD101CW
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Untitled
Abstract: No abstract text available
Text: RECTRON SEMICONDUCTOR CMPSH-3 TECHNICAL SPECIFICATION SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE FEATURES * Power dissipation P D: 350 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 30 V * Operating and storage junction temperature range
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OT-23
-55OC
150OC
OT-23
MIL-STD-202E
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DTA123YCA
Abstract: sot-23 digital
Text: RECTRON DTA123YCA SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 DIGITAL TRANSISTORS TRANSISTORS PNP FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow nefative of the input.
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DTA123YCA
OT-23
OT-23
MIL-STD-202E
DTA123YCA
sot-23 digital
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SF44
Abstract: No abstract text available
Text: RECTRON SF44 SEMICONDUCTOR TECHNICAL SPECIFICATION GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE 200 Volts CURRENT 4.0 Amperes FEATURES * * * * * * * High reliability Low leakage Low forward voltage High current capability Super fast switching speed High surge capability
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DO-201AD
MIL-STD-202E
SF44
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100MHZ
Abstract: FMMT491
Text: RECTRON FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range
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FMMT491
OT-23
OT-23
MIL-STD-202E
100MHZ
FMMT491
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1SS190
Abstract: No abstract text available
Text: RECTRON 1SS190 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
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1SS190
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
1SS190
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RS801M
Abstract: RS802M RS803M RS804M RS805M RS806M RS807M
Text: RS801M RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION RS807M SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 200 amperes peak
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RS801M
RS807M
RS801M
RS802M
RS803M
RS804M
RS805M
RS806M
RS807M
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1N4148
Abstract: BAW56 1N4148 75v 150mA diode
Text: RECTRON SEMICONDUCTOR BAW56 TECHNICAL SPECIFICATION SURFACE MOUNT, DUAL 1N4148 COMMON ANODE DIODE SOT-23 Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Unit Reverse Voltage VRRM 85 V Reverse trr 4 ns Recovery Time Forward Voltage VF 1.0 V @ If = 50 mA
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BAW56
1N4148
OT-23
100uA
BAW56
1N4148 75v 150mA diode
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DTA143EUA
Abstract: No abstract text available
Text: RECTRON SEMICONDUCTOR DTA143EUA TECHNICAL SPECIFICATION SOT-323 DIGITAL TRANSISTORS TRANSISTORS PNP FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit). * The bias resistors conisit of thin-film resistors with complete isolation to allow negative biasing of the input.
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DTA143EUA
OT-323
OT-323
MIL-STD-202E
DTA143EUA
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