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    1SS187 Search Results

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    1SS187 Price and Stock

    Toshiba America Electronic Components 1SS187,LF

    DIODE GEN PURP 80V 100MA S-MINI
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    DigiKey 1SS187,LF Cut Tape 1,322 1
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    1SS187,LF Digi-Reel 1
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    1SS187,LF Reel 3,000
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    Avnet Americas 1SS187,LF Reel 24 Weeks 3,000
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    Mouser Electronics 1SS187,LF 62,575
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    Micro Commercial Components 1SS187-TP

    Interface
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    Toshiba America Electronic Components 1SS187(T5L,F,T)

    Diode Switching 85V 0.1A 3-Pin S-Mini T/R - Tape and Reel (Alt: 1SS187T5LFT)
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    Avnet Americas 1SS187(T5L,F,T) Reel 3,000
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    Toshiba America Electronic Components 1SS187(TE85L,F)

    Diode Switching 85V 0.1A 3-Pin S-Mini T/R - Tape and Reel (Alt: 1SS187(TE85L,F))
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    Avnet Americas 1SS187(TE85L,F) Reel 18 Weeks 3,000
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    Avnet Asia 1SS187(TE85L,F) 24 Weeks 3,000
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    Toshiba America Electronic Components 1SS187,LF(B

    Rectifier Diode Switching Si 85V 0.1A 4ns 3-Pin S-Mini
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    Verical 1SS187,LF(B 1,950 1,563
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    Quest Components 1SS187,LF(B 1,560
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    Avnet Asia 1SS187,LF(B 24 Weeks 3,000
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    Find more 1SS187 price and stock on Findchips.com

    1SS187 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SS187 EIC Semiconductor High Speed Switching Diodes Original PDF
    1SS187 Galaxy Semi-Conductor Holdings Surface mount switching diode Original PDF
    1SS187 Kexin Ultra High Speed Switching Application Original PDF
    1SS187 Shenzhen Yongerjia Electronic Switching Diode Original PDF
    1SS187 Toshiba Japanese - Diodes Original PDF
    1SS187 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1D) Original PDF
    1SS187 Transys Electronics Plastic-Encapsulated Diodes Original PDF
    1SS187 TY Semiconductor Ultra High Speed Switching Application - SOT-23 Original PDF
    1SS187 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS187 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS187 Toshiba Toshiba Shortform Catalog Scan PDF
    1SS187 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS187,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 80V 100MA S-MINI Original PDF
    1SS187T5LFT Toshiba 1SS187 - DIODE ULTRA HS 85V 100MA SC-59 Original PDF
    1SS187T5LT Toshiba 1SS187T5LT - Diode Switching 85V 0.1A 3-Pin S-Mini Original PDF
    1SS187TE85L Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS187TE85L2 Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS187(TE85L,F) Toshiba 1SS187 - Diode Switching 85V 0.1A 3-Pin S-Mini T/R Original PDF
    1SS187TE85R Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS187TE85R2 Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS187 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA • Case: SOT-23 Plastic


    Original     		PDF 1SS187 OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA May-2009, KSYR07

    1SS187

    Abstract: No abstract text available
    Text: RECTRON 1SS187 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


    Original     		PDF 1SS187 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS187

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type High Speed Switching Diode 1SS187 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ●Diode capacitance :Cd=2.2pF typ. 0.4 3 ● Fast reverse recovery time:trr=1.6ns(typ.) 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 1SS187 OT-23 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 SWITCHING DIODE SOT—23 FEATURES １．０ Power dissipation PD : 150 mW（Tamb=25℃） Forward Current IF: 100 mA Reverse Voltage VR : 80 V Operating and storage junction temperature range


    Original     		PDF OT-23 1SS187 100mA 037TPY 950TPY 550REF 022REF

    1SS187

    Abstract: No abstract text available
    Text: 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.


    Original     		PDF 1SS187 OT-23 OT-23 100mA 1SS187

    1SS187

    Abstract: No abstract text available
    Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS187 SC-59 1SS187

    1SS187

    Abstract: No abstract text available
    Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS187 SC-59 1SS187

    sot-23 DIODE marking code D3

    Abstract: 1SS187 sot 23-5 marking code 0-37G d3 sot23
    Text: BL Galaxy Electrical Production specification Surface mount switching diode 1SS187 FEATURES z Pb Low forward voltage VF 3 =0.92V(typ). Lead-free z Fast switching. z Fast reverse recovery time:trr=1.6ns(typ) APPLICATIONS z High speed switching application.


    Original     		PDF 1SS187 OT-23 BL/SSSDC003 sot-23 DIODE marking code D3 1SS187 sot 23-5 marking code 0-37G d3 sot23

    1SS187

    Abstract: No abstract text available
    Text: 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.


    Original     		PDF 1SS187 OT-23 OT-23 100mA

    Untitled

    Abstract: No abstract text available
    Text: 1SS187 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage85.0 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10.0m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)100m


    Original     		PDF 1SS187 Current100m Voltage85 Current500n StyleSOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 Switching Diode SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. CATHODE MARKING: D3• 2. N.C. 3. ANODE Maximum Ratings @TA=25℃


    Original     		PDF OT-23 1SS187 OT-23 100mA ISS187

    Untitled

    Abstract: No abstract text available
    Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS187 SC-59 O-236MOD 100mA

    1SS187

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 100 m A IF: Reverse Voltage 80 V VR: Operating and storage junction temperature range


    Original     		PDF OT-23 1SS187 OT-23 100mA specifi87 1SS187

    1SS187

    Abstract: TO-236MOD
    Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS187 SC-59 961001EAA2' 1SS187 TO-236MOD

    marking d3

    Abstract: No abstract text available
    Text: 1SS187 Switching Diodes SOT-23 1. CATHODE 2. N.C. 3. ANODE Features — — Low forward voltage : VF 3 =0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: D3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits


    Original     		PDF 1SS187 OT-23 100mA marking d3

    1SS187

    Abstract: No abstract text available
    Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS187 SC-59 1SS187

    1SS187

    Abstract: J-STD-020D
    Text: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic


    Original     		PDF 1SS187 OT-23 OT-23 J-STD-020D 2002/95/EC 1SS187 J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS187 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ●Diode capacitance :Cd=2.2pF typ. 0.4 3 ● Fast reverse recovery time:trr=1.6ns(typ.) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05


    Original     		PDF 1SS187 OT-23 100mA

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Diodes 1SS187 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 100 m A IF: Reverse Voltage 80 V VR: Operating and storage junction temperature range 0. 4 2. 9 2. 4 1. 3 0. 95 150 1. 9 PD : 0. 95


    Original     		PDF OT-23 1SS187 OT-23 100mA

    top marking c3 sot23

    Abstract: marking C3 sot-23 1SS226 c3 1SS193 F3 SOT-23 DIODE 1SS184 MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 marking G3
    Text: 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead Pb -Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications


    Original     		PDF 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 OT-23 OT-23, MIL-STD-202, OT-23 100mA 1SS181 1SS184 1SS187 top marking c3 sot23 marking C3 sot-23 1SS226 c3 1SS193 F3 SOT-23 DIODE 1SS184 MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 marking G3

    1SS187

    Abstract: No abstract text available
    Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS187 SC-59 1SS187

    1SS187

    Abstract: No abstract text available
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS187 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF 3 = 0.92 V(Typ.) 0.55 Small Package 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)


    Original     		PDF 1SS187 OT-23 1SS187

    Untitled

    Abstract: No abstract text available
    Text: 1SS187 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 1 87 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp 3 = 0.92V (Typ.)


    OCR Scan     		PDF 1SS187 SC-59

    1SS187

    Abstract: marking MI
    Text: 1SS187 SILICON EPITAXIAL PLANAR TYPE U n i t in m m ULTRA HIGH SPEED SWITCHING APPLICATION. f-Q5 2 . 5 - 0.3 FEATURES : . Small Package : SOT-23MOD . Low Forward Voltage : Vp = 0 .9 2 V T y p . . Fast Reverse Recovery Time : t r r - l •6 n s ( T y p . )


    OCR Scan     		PDF 1SS187 OT-23MOD 1SS187 marking MI