BYX42-300
Abstract: Byx42 600 Philips BYX42 BYX42/300 BYX42-300R the value of BYX42
Text: BYX42 SERIES PHILIPS INTERNATIONAL 5bE D • 711DflEb D O m b E b ODI ■ PHIN T-Ô t~/7 SILICON RECTIFIER DIODES Diffused silicon rectifier diodes in DO-4 metal envelopes, intended for power rectifier applications. The series consists of the following types:
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BYX42
BYX42-300
BYX42-300R
1200R.
10-32UNF
Byx42 600 Philips
BYX42/300
the value of BYX42
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BYX99-300
Abstract: BYX99-300R byx99
Text: BYX99 SERIES T-os-ir PHILIPS INTERNATIONAL 7110fl2b DDmtiTG i n SbE D •PHIN RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud ; BYX99-300 to 1200.
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BYX99
7110fl2b
BYX99-300
BYX99-300R
1200R.
BYX99
711002t,
7Z722S0
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BYX52-300R
Abstract: BYX52 international rectifier 639 BYX52-300
Text: BYX52 SERIES MAINTENANCE TYPE SbE D PHILIPS INTERNATIONAL • 711002b DD41b42 254 • P H I N — t -û i - 1 RECTIFIER DIODES Silicon rectifier diodes in DO-5 metal envelopes, intended for use in power rectifier applications. The series consists of the following types:
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BYX52
711002b
DD41b42
BYX52-300,
BYX52-600,
BYX52-1200.
BYX52-300R,
BYX52-600R,
BYX52-1200R.
BYX52--
BYX52-300R
international rectifier 639
BYX52-300
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BYX98
Abstract: BYX98-300R T-Oi-17 BYX98-300
Text: BYX98 SERIES T - O l- I T PHILIPS INTERNATIONAL IPHIN TllDÖEb GQMlfcibM T1S 5bE D RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : BYX98-300to 1200.
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BYX98
BYX98-300to
BYX98-300R
1200R.
BYX98-300
BYX98
T-Oi-17
711D0Sb
7Z722SS
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BYX32-600
Abstract: Dow Corning 340 BYX32-1600 800R BYX32-600R Dow Corning 600R BYX32 BYX32-1600R
Text: N AMER PHILIPS/DI SCRETE ht53T31 OOlOOflb 1 TOD D J MAINTENANCE TYPES BYX32 SERIES SILICON RECTIFIER DIODES Diffused silicon diodes in metal envelopes w ith ceramic insulation, intended fo r power rectifier application. The-series consists o f the follow ing types:
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BYX32
BYX32-600
BYX32-1600
BYX32-600R
BYX32-1600R
BYX32-
1000R
1200R
1600R
l2800A2s
Dow Corning 340
BYX32-1600
800R
Dow Corning
600R
BYX32-1600R
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BYX38-300
Abstract: BYX38 BYX38-300R iC-NC BYX38/300 T0117
Text: BYX38 SERIES SbE D PHILIPS INTERNATIONAL • 711QÛ2b D D M l b m 3TT ■ P H I N T - 0 M 7 SILICON RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types:
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BYX38
711QflSb
BYX38-300
BYX38-300R
1200R.
10-32UNF
iC-NC
BYX38/300
T0117
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BYX98
Abstract: No abstract text available
Text: BYX98 SERIES - N AMER PHILIPS/DISCRETE 2SE D ^53=131 002255^ T • T^O 1-17 RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists o f the following types: Normal polarity cathode to stud : BYX98-300 to 1200.
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BYX98
BYX98-300
BYX98-300R
1200R.
BYX98
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BYX39 400
Abstract: BYX39 BYX39-1400 BYX39-1400R BYX39-600 BYX39-600R IEC134
Text: BYX39 SERIES r-ûi-\z_ - PHILIPS INT ERNATIONAL 5 L jE 711002b 0Dmb2G D IPHIN CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333—F005 Silicon diodes in a DO—4 metal envelope, capable of absorbing transients and Intended for use in power rectifier application.
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711002b
BYX39
BS9333â
BYX39-600
BYX39-1400.
BYX39-600R
BYX39-1400R.
BYX39-
BYX39 400
BYX39-1400
BYX39-1400R
IEC134
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Byx56 1500
Abstract: BYX56-1400R BYX56-600 BYX56 BYX56/600 BYX56-1400 BYX56-600R IEC134 T0119
Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE BSE D ^53=131 Q0S5Ô41 5 B BYX56 SERIES 7 ^ 0 1 -1 9 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO— 5 metal envelope, capable of absorbing transients and intended fo r power rectifier applications.
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BYX56
BYX56-600
BYX56-1400.
BYX56-600R
BYX56-1400R.
BYX56-
Byx56 1500
BYX56-1400R
BYX56/600
BYX56-1400
IEC134
T0119
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BYX96
Abstract: T17C as6 diode BYX96-300 BYX96-300R BYX96-300U D60-r
Text: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 711DflSt. D041bS5 1T3 ■ PHIN r-o ■ n RECTIFIER DIODES Also available to B S 9 331-F 129 Silicon rectifier diodes in metal envelopes similar to DO -4, intended fo r use in power rectifier applications. The series consists o f the following types:
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BYX96
G041bS5
BS9331-F129
BYX96-300
BYX96-300R
1600R.
7Z72262
BYX96
T17C
as6 diode
BYX96-300U
D60-r
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BYX52-300R
Abstract: U838 BYX52 BYX52-1200 BYX52-1200R BYX52-300 BYX52-600 BYX52-600R IEC134 international rectifier 639
Text: BYX52 SERÍES MAINTENANCE TYPE PHILIPS 5 bE INTE RNA TIO NA L D I 711002b 0D41bM2 2 S4 M P H I N ^ T -O t-l RECTIFIER DIODES Silicon rectifier diodes in DO-5 metal envelopes, intended for use in power rectifier applications. The series consists of the following types:
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BYX52
711002b
0D41bM2
BYX52-300,
BYX52-600,
BYX52-1200.
BYX52-300R,
BYX52-600R,
BYX52-1200R.
BYX52-
BYX52-300R
U838
BYX52-1200
BYX52-1200R
BYX52-300
BYX52-600
BYX52-600R
IEC134
international rectifier 639
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ess 1978
Abstract: BYX97 BYX97-300 BYX97-300R BYX97/300 p02af
Text: g«!TJ MAINTENANCE TYPE BYX97 SERIES bbSa^l 25E D N AflER PHILIPS/DISCRETE G052ÖS3 T B i 7 ^ 0 1 -1 ^ RECTIFIER DIODES A lso available to B S9331 -F1 3 0 Silicon rectifier diodes in metal envelopes similar to DO-5, intended for use in power rectifier applications.
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BYX97
BS9331-F130
BYX97-300
BYX97-300R
1600R.
BYX97
7Z72283
ess 1978
BYX97/300
p02af
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BYX56-600
Abstract: Byx56 1500 t0711 BYX56-600R BYX56 BYX56-1400 BYX56-1400R IEC134 BYX56/BYX56-600R
Text: BYX56 SERIES M AIN TEN AN C E TYPE SbE D - PHILIPS INTERNATIONAL • 7110A2b 0041b4b STT ■ PHIN T -0 7 -1 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO— 5 metal envelope, capable of absorbing transients and intended for power rectifier applications.
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BYX56
711002b
0041b4b
T-07-
BYX56-600
BYX56-1400.
BYX56-600R
BYX56-1400R.
BYX56-
-600IR)
Byx56 1500
t0711
BYX56-1400
BYX56-1400R
IEC134
BYX56/BYX56-600R
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Untitled
Abstract: No abstract text available
Text: BYX56 SERIES M A INTENANCE TYPE - PHILIPS INTERNATIONAL SbE D • 711Dû2t. □ □41t.4b STT ■ PHIN T z p r-n CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO—5 metal envelope, capable of absorbing transients and intended fo r power rectifier applications.
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BYX56
BYX56â
1400R.
711002b
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE SSE D ^ 5 3 ^ 3 1 0032621 ? • BYX42 SERIES A r^Q M 7 SILICON RECTIFIER DIODES Diffused silicon rectifier diodes in DO-4 metal envelopes, intended fo r power rectifier applications. The series consists of the follow ing types: Normal polarity cathode to stud : BYX42-300 to 1200.
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BYX42
BYX42-300
BYX42-300R
1200R.
bb53T31
7Z72553
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BYX99-300
Abstract: BYX99 BYX99-300R connector 10-32UNF AV1125
Text: BYX99 SERIES N AMER PHILIPS/DISCRETE SSE D B ^53*131 DOSSfibS - T -O Ì-Ì7 ' RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended fo r use in power rectifier applications. The series consists o f the follow ing types: Normal po la rity cathode to stud : BYX99-300 to 1200.
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BYX99
BYX99-300
BYX99-300R
1200R.
10-32UNF
BYX99
7Z72S49
connector 10-32UNF
AV1125
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BYX38-300
Abstract: BYX38 IR 5331 BYX38-300R XFRM
Text: IT N AMER PHILIPS/DISCRETE ESE D H ^53131 QOSSfiO^ b • BYX38 SERIES T-0\-i7 SILICON RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended fo r use in power rectifier applications. The series consists o f the follow ing types: Normal polarity cathode to stud : BYX38-300 to 1200.
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BYX38
BYX38-300
BYX38-300R
1200R.
10-32UNF
IR 5331
XFRM
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BYX25
Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
Text: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:
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BYX25
711Dfl2b
BYX25--600
BYX25--1400.
BYX25--600R
BYX25--1400R.
10-32UNF
711DflSti
BYX25-600
diode BYX25 600
BYX25-600R
BYX25-1400
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BYX99-300
Abstract: BYX99 BYX99-300R 7110A2E
Text: BYX99 S E R IE S T-O S-iT PHILIPS INTERNATIONAL viiosEb GDmti7G i n SbE ]> IPHIN RECTIFIER DIODES Silicon rectifier diodes in D O -4 metal envelopes, intended for use in power rectifier applications. The series consists o f the following types: Normal polarity cathode to stud ; B Y X 9 9 -3 0 0 to 1200.
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BYX99
BYX99-300
BYX99-300R
1200R.
7110A2E
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Untitled
Abstract: No abstract text available
Text: M A IN T E N A N C E TYPE BYX97 SERIES N AUER PHILIPS/DISCRETE 25E D B bL.53^31 0022653 B RECTIFIER DIODES Also available to BS9331-F130 Silicon rectifier diodes in metal envelopes similar to DO-5, intended for use in power rectifier applications. The series consists of the following types:
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BYX97
BS9331-F130
YX97-300
BYX97-300R
1600R.
BYX97-300
BYX97
T-01-19
7Z72282
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BYX98-300
Abstract: BYX98 BYX98-300R xfsm
Text: BYX98 SERIES N AMER PHILIPS/DISCRETE 2SE D bb53'i31 0 0 5 555^ T • T - o i - n RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended fo r use in power rectifier applications. The series consists o f the follow ing types: Normal po larity cathode to stud : BYX98-300 to 1200.
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BYX98
b53131
T-Ol-17
BYX98-300
BYX98-300R
1200R.
xfsm
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BYX50
Abstract: ALPS 102 BYX50-200 IEC134J BYX5
Text: N AMER PHILIPS/DISCRETE TOD 1^53131 OOIDSSO T D BYX50 SERIES T - 03-/7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists of the following types:
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BYX50
T-03-/7
BYX50-200,
BYX50-
001052b
ALPS 102
BYX50-200
IEC134J
BYX5
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE =(□53=131 0 0 22647 3 H B YX96 SERIES 25E D A r-o i-i* RECTIFIER DIODES Also available to BS9331-F129 Silicon rectifier diodes in metal envelopes similar to DO-4, intended for use in power rectifier applications. The series consists of the following types:
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BS9331-F129
BYX96-300
BYX96-300R
1600R.
BYX96
00E5SS1
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BYX98
Abstract: BYX98-300 BYX98-300R
Text: BYX98 SERIES T —0 \ - I 7 PHILIPS INTERN A T I O N A L 711D0Sb DOMlfcitiM T1S ShE D IPHIN RECTIFIER DIODES Silicon rectifier diodes in DO -4 metal envelopes, intended for use in power rectifier applications. The series consists o f the following types: Normal polarity cathode to stud : B Y X 9 8 -3 0 0 to 1200.
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BYX98
BYX98-300to
BYX98-300R
1200R.
BYX98-300
BYX98
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