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    MCP67MV

    Abstract: RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC
    Text: 5 4 3 2 1 F9DC BLOCK DIAGRAM THERMAL SENSOR G781 BATTERY TYPE Page 5 D D 3S1P 3S2P FAN CTRL Page 5 AC & BAT CON Page 47 CPU S1g1 GDDR2 16Mx16 x4 DDR2 16M*16-2.5 1.8V Page42 INFINEON DDR2 SDRAM 667MHz Page2,3,4 DDR2 667 SODIMM X2 +1.8V +0.9VS Page11,12,13


    Original     		PDF 16Mx16 Page42 Page17 Page18 667MHz Page11 G3-64 Page40 MCP67MD Page24 MCP67MV RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC

    bourns 10k ohm trimpot

    Abstract: 3 pins trimmer resistor 10K ohm trimmer 10k 10k trimmer potentiometer resistors 100 ohm 2 watt rheostat application of ohmmeter
    Text: Trimming Potentiometer Application Note Effects of Setting the Wiper at End Set on Cermet Resistors By Anna Melissa Tiangco Bourns Trimpot® Division, Application Engineer Introduction Bourns® trimming potentiometers are designed and tested to operate under extreme conditions.


    Original     		PDF e/T0711 bourns 10k ohm trimpot 3 pins trimmer resistor 10K ohm trimmer 10k 10k trimmer potentiometer resistors 100 ohm 2 watt rheostat application of ohmmeter

    4832

    Abstract: steward catalog 503 911 35T0155-10P steward 248-6 LS 2027 MLT 22 721 permeability 38T0155-10P T0155-00P
    Text: STEWARD TOROIDS Table Of Contents Steward & Quality Assurance. 3 Quality Philosophy. 3


    Original     		PDF

    asus k53

    Abstract: Asus k53 motherboard AR8131-AL1E RT8015BGQW ASUS P5 MOTHERBOARD CIRCUIT diagram asus crb input voltage point IT8301E R5U230 ar8121 RT8206A
    Text: 5 4 3 2 1 SYSTEM PAGE REF. D C B A 01. Block Diagram 02. System Setting 03. CPU 1 _DMI,PEG,FDI,CLK,MISC 04. CPU(2)_DDR3 05. CPU(3)_CFG,RSVD,GND 06. CPU(4)_PWR 07. CPU(5)_XDP 16. DDR3(1)_SO-DIMM0 17. DDR3(2)_SO-DIMM1 18. DDR3(3)_CA/DQ Voltage 19. VID Controller


    Original     		PDF ICS9LPR362 IT8512 AR8131 ALC663VD FM2010 R5U230 200ms 110ms 100us asus k53 Asus k53 motherboard AR8131-AL1E RT8015BGQW ASUS P5 MOTHERBOARD CIRCUIT diagram asus crb input voltage point IT8301E ar8121 RT8206A

    MA44951

    Abstract: MA44952 MA44953 MA44954 MA44955 MA44956 MA44957 MA44958 MA44959 ty 617 equivalent
    Text: sym M/A-COM SEMICONDiBRLNGTON 11 D 5b422m DDQlMDfl =1 « M I C T-07-11 MA44950 Series Silicon Multichip Pulsed Multiplier Varactors Features • PEAK OUTPUT POWER TO 150 WATTS ■ SIMPLE CIRCUITS ■ PARTS CAN BE SCREENED TO MILITARY SPECIFICATIONS OR JANTX, TXV ÉQUIVALENT


    OCR Scan     		PDF MA44950 MIL-STD-750 MA44951 MA44952 MA44953 MA44954 MA44955 MA44956 MA44957 MA44958 MA44959 ty 617 equivalent

    CP32P

    Abstract: No abstract text available
    Text: LORAL NICROtilAVE-FSI SIE D • 5530130 QQDD4L.D 155 HARMONIC GENERATOR VARACTORS DESCRIPTION APPLICATIONS The G C3200 series o f harm onic ge nera to r varactors uses a single epitaxial silicon die. Strict material and process controls result in h igh reproducibility. A unique silicon dioxide passiva­


    OCR Scan     		PDF GC3200 Cp-32pl= CP32P

    GC3300

    Abstract: GC3307 gc3306 GC3305
    Text: LORAL Î1ICROUAVE-FS I SIE D • T-07-11 5 5 0 0 13 0 O O O G M b E T2fl HARMONIC GENERATOR VARACTORS DESCRIPTION APPLICATIONS The GC3300 Series of Multiplier Varactors offer high break­ down voltage, lower transition time and lower capacitances than available with GC3200 Series. This is accomplished by


    OCR Scan     		PDF 000G4b2 T-07-11 GC3300 GC3200 GC-3300 -90-rM GC3307 gc3306 GC3305

    Gunn Diode MA49156

    Abstract: MA49156 24 GHz Microwave Doppler Radar Speed Sensor MA49172 MA49508 Gunn Diode at power supply circuit MA49000 police radar detector x-band varactor diode MA49159
    Text: M/A-COM SEMICONDUCTOR HE D I 5b4E514 DOOlim 4 I T-ÖJ-II MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO


    OCR Scan     		PDF 5b4E514 MA49000 SbM2S14 DGD1424 T-07-11 Gunn Diode MA49156 MA49156 24 GHz Microwave Doppler Radar Speed Sensor MA49172 MA49508 Gunn Diode at power supply circuit police radar detector x-band varactor diode MA49159

    BYX25

    Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
    Text: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:


    OCR Scan     		PDF BYX25 711Dfl2b BYX25--600 BYX25--1400. BYX25--600R BYX25--1400R. 10-32UNF 711DflSti BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400

    varactor diode capacitance measurement

    Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
    Text: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY


    OCR Scan     		PDF t-07-11 MA48700 varactor diode capacitance measurement impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz Gunn Diode e band

    PH 21 DIODE

    Abstract: DD40 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
    Text: SbE D • T l l Q Ô S b D04 D Û7 1 TET ■ PHIN nmitps Semiconductors Product specification T ~ 0 7 ~ i I Low voltage avalanche diode P H I L I PS I N T E R N A T I O N A L PLVA400A SbE D KN FEATURES DESCRIPTION • Very low dynamic impedance at low currents: approximately 1/6o


    OCR Scan     		PDF PLVA400A DO-35 PLVA459A PLVA456A PLVA450A PLVA453A 250MA MLA423 PH 21 DIODE DD40 PLVA453A PLVA462A PLVA465A PLVA468A

    1N4387

    Abstract: 1N4386 1N5154 1N5150 1N5151 1N5150-5157 1N5155 1N4388 1N5149 1N5150A
    Text: M/A-con s e u i c o n d t Br lngto n h d A$ m 5b42214 QGQlB'iL. h • MIC T-07-11 1N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors Features ■ HIGH POWER ■ HERMETIC SEALS ■ LOW THERMAL RESISTANCE ■ HIGH EFFICIENCY Applications These series of high power silicon multiplier diodes are


    OCR Scan     		PDF 5b42214 1N4386-88 1N5150-5157 TWXT-07-11 1N4387 1N4386 1N5154 1N5150 1N5151 1N5155 1N4388 1N5149 1N5150A

    MA44600

    Abstract: SRD diode MA4B300 MA43000 MA43543 MA43592 MA44750 MA43002-91 step recovery diodes MA44632A30
    Text: M/A-COM SEMICONDiBRLNGTON 11 D m SbMSSlM GGD137b □ • M I C _ 7 ^ 0 7 -// MA44600 Series Step Recovery Diodes Features ■ LOW TRANSITION TIMES ■ TIGHT CAPACITANCE RANGES ■ HIGH VOLTAGE AND LOW THERMAL RESISTANCE FOR HIGHER INPUT POWER Applications


    OCR Scan     		PDF SbM52m DDD137b MA44600 SRD diode MA4B300 MA43000 MA43543 MA43592 MA44750 MA43002-91 step recovery diodes MA44632A30

    5082-0253

    Abstract: step recovery diodes 5082-0885 5082-0830 5082-0320
    Text: HEWLETT-PACKARDn CMPNTS 2GE D B 4M475Ö4 DÜQSÔOS E3 5082-0132 5082-0241 5082-0253 5082-0300 5082-0310 5082-0320 5082-0335 5082-0800 CERAMIC PACKAGED STEP RECOVERY DIODES 1 H EW LETT W !¿J P A C K A R D t 5082-0805 5082-0810 5082-0820 5082-0821 5082-0830


    OCR Scan     		PDF 4M475 5082-0253 step recovery diodes 5082-0885 5082-0830 5082-0320

    DVE4557-41

    Abstract: Parametric Varactor diodes series and parallel resonance 100-C DVE4556-01 DVE4556-11 DVE4556-12 DVE4556-31 DVE4556-41 DVE4556-51
    Text: ALPHA IN»/ SEM IC ON DU CT OR 33E » • 0SflSMM3 OQOQ'ìbS 7 ■ ALP "T-07-u GaAs Parametric Amplifier Varactors Features ■ ■ ■ ■ ■ Description High Gain and Low Noise Temperature Deloach and Houlding Measurements Insured Reproductibiiity High Reliability and Space Qualified


    OCR Scan     		PDF T-07-11 DVE4557-41 Parametric Varactor diodes series and parallel resonance 100-C DVE4556-01 DVE4556-11 DVE4556-12 DVE4556-31 DVE4556-41 DVE4556-51

    BYX25-600

    Abstract: BYX25 BYX25-600R diode BYX25 600 IR 0711 RECTIFIER DIODES PHILIPS BYX25 BYX25-1400 BYX25-1400R IEC134
    Text: BYX25 SERIES “ SbE D PHILIPS INTERNATIONAL • 711DflSb □ □ m S T b S4M ■ PHIN T-07-H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable o f absorbing transients and intended fo r power rectifie r applications. The series consists o f the follow ing types:


    OCR Scan     		PDF BYX25 711DflSb T-07-H BYX25-600 BYX25-1400. BYX25-600R BYX25-1400R. BYX25- diode BYX25 600 IR 0711 RECTIFIER DIODES PHILIPS BYX25 BYX25-1400 BYX25-1400R IEC134

    HP 5082-0180

    Abstract: HP 5082-0113 5082-0833 hp 5082-0151 5082-0840 5082-0815 5082-0151 5082-0153 5082-0825 5082-0114
    Text: HEWLETT-PACKARD i CMPNTS fT Y T l H E W W P A C K A R D !ÍL j L E T T 20E D E3 4447SÖ4 DGOSñOS CLASS PACKAGED STEP RECOVERY DIODES 5082-0112 5082-0113 5082-0114 5082-0151 5082-0153 5082-0180 El 5082-0803 5082-0815 5082-0825 5082-0833 5082-0840 Features


    OCR Scan     		PDF 4447S 80S2A HP 5082-0180 HP 5082-0113 5082-0833 hp 5082-0151 5082-0840 5082-0815 5082-0151 5082-0153 5082-0825 5082-0114