DIODE marking 5ba
Abstract: No abstract text available
Text: POWER RECTIFIER DIODE 1N5550D3A / 1N5550D3B • VBR = 220V, IF = 5A, Standard Reverse Recovery Rectifier Diode • Light Weight Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B” / “E-MELF” Package† • Switching Power Supply Applications
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1N5550D3A
1N5550D3B
1N5550D3B-JQRS
DIODE marking 5ba
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D-5B layout
Abstract: LE17 MIL-PRF19500 QR217 8814 "Power rectifier Diode"
Text: POWER RECTIFIER DIODE 1N5550D3A / 1N5550D3B • VBR = 220V, IF = 5A, Standard Reverse Recovery Rectifier Diode • Light Weight Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B” / “E-MELF” Package† • Switching Power Supply Applications
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1N5550D3A
1N5550D3B
1N5550D3B-JQRS
D-5B layout
LE17
MIL-PRF19500
QR217
8814
"Power rectifier Diode"
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"Power rectifier Diode"
Abstract: power rectifier diode D-5B layout LE17 MIL-PRF19500 QR217 1N5551D3A 1n5551d3
Text: POWER RECTIFIER DIODE 1N5551D3A / 1N5551D3B • VBR = 440V, IF = 5A, Standard Reverse Recovery Rectifier Diode • Light Weight Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B” / “E-MELF” Package† • Switching Power Supply Applications
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1N5551D3A
1N5551D3B
1N5551D3B-JQRS
"Power rectifier Diode"
power rectifier diode
D-5B layout
LE17
MIL-PRF19500
QR217
1n5551d3
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-2.030 revG 01/05 1N3879 R , 1N3889(R) 6/ 12/ 16FL(R) SERIES FAST RECOVERY DIODES Stud Version Major Ratings and Characteristics Parameters 1N3879- 1N38891N3883 1N3893 6FL 12FL 16FL Units Description This range of fast recovery diodes is designed for applications in DC power
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1N3879
1N3889
1N3879-
1N38891N3883
1N3893
12-Mar-07
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2n7632
Abstract: IRHLUC7670Z4 2N763
Text: PD-97268A 2N7632UC IRHLUC7670Z4 RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω
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PD-97268A
2N7632UC
IRHLUC7670Z4
IRHLUC7630Z4
MIL-PRF-19500/255L
2n7632
IRHLUC7670Z4
2N763
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IRHLUC7630Z4
Abstract: No abstract text available
Text: PD-97268A 2N7632UC IRHLUC7670Z4 RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω
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PD-97268A
2N7632UC
IRHLUC7670Z4
IRHLUC7630Z4
MIL-PRF-19500/255L
IRHLUC7630Z4
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2N763
Abstract: 2N7632UC IRHLUC7630Z4
Text: PD-97268 2N7632UC IRHLUC7670Z4 60V, Combination 1N-1P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω
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PD-97268
2N7632UC
IRHLUC7670Z4
IRHLUC7630Z4
MIL-PRF-19500/255L
2N763
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1N6626D3A-JQRS
Abstract: No abstract text available
Text: ULTRA FAST RECOVERY POWER RECTIFIER 1N6626D3A / 1N6626D3B • High Reliability Screening Options Available • High forward current surge current capability • Switching power supplies or other applications requiring fast switching and low forward loss ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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1N6626D3A
1N6626D3B
1N6626
1N6626D3A-JQRS
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MIL-PRF-19500
Abstract: NASA Group 1N6664 1N6664R 1N6666 1N6666R silicon power rectifier 594a
Text: METRIC The documentation and process conversion measures necessary to comply with this amendment shall be completed by 7 Oct. 1999. MIL-PRF-19500/594A AMENDMENT 1 7 July 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/594A
1N6664
1N6666,
1N6664R
1N6666R
MIL-PRF-19500/594A,
MIL-PRF-19500,
MIL-PRF-19500)
MIL-PRF-19500
NASA Group
1N6666
silicon power rectifier
594a
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1N6620
Abstract: 1N6625 1N6623 1N6620US 1N6622 1N6625US 1N6621 JANTXV 1N6625 JANTX 1N6623 JANTX
Text: 1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be
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1N6620
1N6625
MIL-PRF19500/585
1N6620US
1N6625US)
1N6625
1N6623
1N6622
1N6625US
1N6621 JANTXV
1N6625 JANTX
1N6623 JANTX
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MSP6620US
Abstract: 1N6623 1N6620 1n6625 fast recovery 1000 volt JAN 1N6620US 1N6622 1N6625US EIA-481-B Microsemi micronote series 050
Text: 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be
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1N6620US
1N6625US
MIL-PRF19500/585
1N6620
1N6625)
1N6620US
MSP6620US
1N6623
1n6625
fast recovery 1000 volt JAN
1N6622
1N6625US
EIA-481-B
Microsemi micronote series 050
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SP6620US
Abstract: 1N6620 1N6620US 1N6622 1N6623 1N6625 1N6625US EIA-481-B Microsemi micronote series 050 1N6621 JANTX
Text: 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be
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1N6620US
1N6625US
MIL-PRF19500/585
1N6620
1N6625)
1N6620US
SP6620US
1N6622
1N6623
1N6625
1N6625US
EIA-481-B
Microsemi micronote series 050
1N6621 JANTX
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1N6620
Abstract: 1N6620US 1N6622 1N6623 1N6625 1N6625US 1N6621
Text: 1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be
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1N6620
1N6625
MIL-PRF19500/585
1N6620US
1N6625US)
1N6622
1N6623
1N6625
1N6625US
1N6621
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irfip240
Abstract: DIODE PN junction diode
Text: • 4aS54SE Q01S3D" ^ " 1NR PD‘9744 IRFIP240 International [^1 Rectifier HEXFET« Power MOSFET • • • • • • • INTERNATIONAL RECTIFIER Isolated Package DC Package Isolation^ 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm
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Q01S3D4
IRFIP240
O-247
DIODE PN junction diode
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100FXFG13
Abstract: No abstract text available
Text: TO SH IB A 100FXFG13,100FXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1nnFYFGi3 1nnpypHiq •v w ■ w m. m ' w ■v g m ^ur w ■ ^ m ■ ■ ■ ■ w Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage «» n v ±-
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100FXFG13
100FXFH13
33the
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a1870
Abstract: A177N A187A A170PB 1N3261 1N3262 A170A A177 A180 A180A
Text: RECTIFIERS 100 TO 150 AMPERES JIE DEC TYPE GE TYPE SPECIFICATIONS •f 1N 3 2 8 9 -9 6 A 170 A 177 - A180 A 187 A V operation) 100 10 0 100 160 150 150 T c = <°C> 130 13 0 130 125 143 110 M ax. average fo rw ard current (1 phase m 1 N 3 2 6 0 -7 5 A70
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1N3289-96
IN3260-75
A170A
1N3261
A180A
A187A
1N3262
1N3289
A170B
A177B
a1870
A177N
A187A
A170PB
A177
A180
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common anode schottky to220
Abstract: diode d07 anode common fast recovery diode c 92 M - 02 DIODE 3a ultra fast diode D041 SE 40 RECTIFIER Super matched pair 519 SOT23 anode common fast recovery diode dual
Text: DIODES & RECTIFIERS GENERAL PURPOSE NTE Type No. Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop {Volts)
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110MP
OT-23
200MHz
T0220
QQ0355Ã
common anode schottky to220
diode d07
anode common fast recovery diode
c 92 M - 02 DIODE
3a ultra fast diode
D041
SE 40 RECTIFIER
Super matched pair
519 SOT23
anode common fast recovery diode dual
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A180P
Abstract: a1870 GE a70b a170 VS A177M 1N3261 1N3262 A170A A170M A180
Text: RECTIFIERS 100 TO 150 AMPERES 1N3289-96 JIE DEC T Y P E 1N3260-75 GE T Y P E A70 A170 A177 - A180 A187 SPEC IFICATIO N S Max. average forward current 1 phase •f m ( A V operation) 100 100 100 160 150 150 130 130 130 125 143 110 T c = <°C> V RM (surge)
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1N3289-96
IN3260-75
A170A
1N3261
A180A
A187A
1N3262
1N3289
A170B
A177B
A180P
a1870
GE a70b
a170 VS
A177M
A170M
A180
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DIODE SW-05
Abstract: No abstract text available
Text: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40
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110MP
OT-23
200MHz
T0220
b43125T
0P03SSÃ
DIODE SW-05
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D 7 ^ 4 1 4 2 GG1247Ü 613 m S H G K N-CHANNEL POWER MOSFET SSP1N60/1N55 FEATURES • • • • • • TO-220 Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance
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GG1247Ã
SSP1N60/1N55
O-220
SSP1N60
SSP1N55
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S11 SCHOTTKY diode
Abstract: Trench MOS Schottky Rectifier fet with schottky diode ELM14900AA converter DC-DC SOP-8
Text: 2 3 in one N-Channel Power MOS FET ELM14900xA ELM14904xA Advance Information ELM14900XA — Advance Information Dual N-Channel Enhancement Mode Power MOS FET with Schottky Diode • GENERAL DESCRIPTION ELM14900xA Series uses advanced trench technology to provide excellent Ri>-«« , and low gate charge.
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ELM14900xA
ELM14904xA
14W4AM
S11 SCHOTTKY diode
Trench MOS Schottky Rectifier
fet with schottky diode
ELM14900AA
converter DC-DC SOP-8
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SSP1N60
Abstract: ssp1n55
Text: N-CHANNEL POWER MOSFET SSP1N60/1N55 FEATURES • • • • • • TO-220 Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Improved high temperature reliability 1. Gate 2. Drain
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SSP1N60/1N55
O-220
SSP1N60
SSP1N55
SSP1N55
300us,
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12v to 220v step-up transformer winding awg
Abstract: AN-965A Full-bridge series resonant converter PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES LC resonant resonant full bridge schematic HEXFET Characteristics LC resonant CIRCUIT OPERATION 220v 100a diode bridge transformer 220V 12V 8A
Text: A P P L IC A T IO N N O T E 9 6 5 A A 500W100 kHz Resonant Converter Using HEXFETs' H E X F E T is a trademark of International Rectifier by S. Young, G. C ailln o Summary This application note describes the im plem entation o f a 100 kH z reson ant converter using International Rec
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500W100
AN-965A
00V/div.
200Wdiv.
AN-965A
12v to 220v step-up transformer winding awg
Full-bridge series resonant converter
PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES
LC resonant
resonant full bridge schematic
HEXFET Characteristics
LC resonant CIRCUIT OPERATION
220v 100a diode bridge
transformer 220V 12V 8A
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12v to 220v step-up transformer winding awg
Abstract: CD4013B IC PIN DETAILS HEXFETs FETs B66335
Text: APPLICATION NOTE 965A A 500W100 kHz Resonant Converter Using HEXFETs* H E X F E T is a trademark ot International Rectifier by S. Young, Q. Cattino Summary This application note describes the implementation o f a 100 kHz reson ant converter using International Rec
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500W100
AN-965A
12v to 220v step-up transformer winding awg
CD4013B IC PIN DETAILS
HEXFETs FETs
B66335
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