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    2N763 Price and Stock

    GeneSic Semiconductor Inc 2N7638-GA

    TRANS SJT 650V 8A TO276
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    GeneSic Semiconductor Inc 2N7639-GA

    TRANS SJT 650V 15A TO257
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    GeneSic Semiconductor Inc 2N7637-GA

    TRANS SJT 650V 7A TO257
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    GeneSic Semiconductor Inc 2N7635-GA

    TRANS SJT 650V 4A TO257
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    GeneSic Semiconductor Inc 2N7636-GA

    TRANS SJT 650V 4A TO276
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    Find more 2N763 price and stock on Findchips.com

    2N763 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N7635-GA GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 650V 4A TO-257 Original PDF
    2N7635M1 International Rectifier 60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET in a 14-Lead Flat Pack package; QPL part number related to IRHLG7670Z4 Original PDF
    2N7636-GA GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 650V 4A TO276 Original PDF
    2N7637-GA GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 650V 7A TO-257 Original PDF
    2N7638-GA GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 650V 8A TO276 Original PDF
    2N7639-GA GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 650V 15A TO-257 Original PDF

    2N763 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRHLA770Z4

    Abstract: IRHLA7930Z4 IRHLA7970Z4 2n7630 2N763 97306 quad p-CHANNEL
    Text: PD-97306 2N7630M2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE 14-LEAD FLAT PACK IRHLA7970Z4 60V, Quad P-CHANNEL ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLA7970Z4 100K Rads (Si) 1.36Ω -0.56A IRHLA7930Z4 300K Rads (Si)


    Original     		PDF PD-97306 2N7630M2 14-LEAD IRHLA7970Z4 IRHLA7970Z4 IRHLA7930Z4 MlL-STD-750, IRHLA770Z4 IRHLA7930Z4 2n7630 2N763 97306 quad p-CHANNEL

    transistor bf 175

    Abstract: No abstract text available
    Text: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF 2N7638-GA 2N7638 73E-46 50E-28 77E-10 23E-10 20E-02 2N7638-GA transistor bf 175

    Untitled

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		PDF 2N7637-GA 2N7637 73E-46 50E-28 77E-10 23E-10 20E-02 2N7637-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		PDF 2N7635-GA 2N7635 22E-47 91E-27 37E-10 36E-10 50E-02 2N7635-GA

    2n7633

    Abstract: IRF N-Channel Power MOSFETs IRHLA7630Z4 IRHLA7670Z4 2N763
    Text: PD-97251 2N7633M2 IRHLA7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE 14-LEAD FLAT PACK Product Summary Part Number Radiation Level IRHLA7670Z4 100K Rads (Si) IRHLA7630Z4 300K Rads (Si) RDS(on) ID


    Original     		PDF PD-97251 2N7633M2 IRHLA7670Z4 14-LEAD IRHLA7630Z4 166mH, -161A/ 2n7633 IRF N-Channel Power MOSFETs IRHLA7630Z4 IRHLA7670Z4 2N763

    IRHLF770Z4

    Abstract: No abstract text available
    Text: PD-94685E 2N7631T2 IRHLF7970Z4 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-39 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLF7970Z4 100K Rads (Si) 1.35Ω -1.5A IRHLF7930Z4 300K Rads (Si) 1.35Ω -1.5A


    Original     		PDF PD-94685E IRHLF7970Z4 IRHLF7930Z4 2N7631T2 MIL-STD-750, MlL-STD-750, O-205AF IRHLF770Z4

    2n7632

    Abstract: IRHLUC7670Z4 2N763
    Text: PD-97268A 2N7632UC IRHLUC7670Z4 RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY ™ SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω


    Original     		PDF PD-97268A 2N7632UC IRHLUC7670Z4 IRHLUC7630Z4 MIL-PRF-19500/255L 2n7632 IRHLUC7670Z4 2N763

    2N7638-GA SPICE

    Abstract: high-temperature-sic-junction-transistors
    Text: 2N7638-GA Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the 2N7638-GA. * MODEL OF GeneSiC Semiconductor Inc.


    Original     		PDF 2N7638-GA sic/sjt/2N7638-GA 2N7638-GA. 12-DEC-2014 2N7638 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7638-GA SPICE high-temperature-sic-junction-transistors

    2N7637-GA SPICE

    Abstract: high-temperature-sic-junction-transistors
    Text: 2N7637-GA Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the 2N7637-GA. * MODEL OF GeneSiC Semiconductor Inc.


    Original     		PDF 2N7637-GA sic/sjt/2N7637-GA 2N7637-GA. 12-DEC-2014 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA SPICE high-temperature-sic-junction-transistors

    2N7635-GA SPICE

    Abstract: high-temperature-sic-junction-transistors
    Text: 2N7635-GA Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file http://www.genesicsemi.com/images/ hit_sic/sjt/2N7635-GA_SPICE.pdf into LTSPICE (version 4) software for simulation of the 2N7635-GA. * MODEL OF GeneSiC Semiconductor Inc.


    Original     		PDF 2N7635-GA sic/sjt/2N7635-GA 2N7635-GA. 12-DEC-2014 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA SPICE high-temperature-sic-junction-transistors

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		PDF 2N7635-GA 2N7635 22E-47 91E-27 37E-10 36E-10 50E-02 2N7635-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF 2N7636-GA 2N7636 22E-47 91E-27 37E-10 36E-10 50E-02 2N7636-GA

    2N7639-GA SPICE

    Abstract: No abstract text available
    Text: 2N7639-GA Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the 2N7639-GA. * MODEL OF GeneSiC Semiconductor Inc.


    Original     		PDF 2N7639-GA sic/sjt/2N7639-GA 2N7639-GA. 12-DEC-2014 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 2N7639-GA SPICE

    2n2222 spice model

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7637-GA 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA 2n2222 spice model

    2N763

    Abstract: No abstract text available
    Text: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on)


    Original     		PDF PD-97191B 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MO-036AB MlL-STD-750, -164A/ 2N763

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on)


    Original     		PDF PD-97191B 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MlL-STD-750, -164A/Â MO-036AB

    2N763

    Abstract: 2N7632UC IRHLUC7630Z4
    Text: PD-97268 2N7632UC IRHLUC7670Z4 60V, Combination 1N-1P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω


    Original     		PDF PD-97268 2N7632UC IRHLUC7670Z4 IRHLUC7630Z4 MIL-PRF-19500/255L 2N763

    Untitled

    Abstract: No abstract text available
    Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF 2N7636-GA 2N7636 22E-47 91E-27 37E-10 36E-10 50E-02 2N7636-GA

    2n7631

    Abstract: 2N7631T2 IRHLF7970Z4 IRHLF770Z4 IRHLF7930Z4 2N763
    Text: PD-94685D 2N7631T2 IRHLF7970Z4 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-39 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLF7970Z4 100K Rads (Si) 1.25Ω -1.6A IRHLF7930Z4 300K Rads (Si) 1.25Ω -1.6A


    Original     		PDF PD-94685D 2N7631T2 IRHLF7970Z4 IRHLF7970Z4 IRHLF7930Z4 MIL-STD-750, MlL-STD-750, O-205AF 2n7631 2N7631T2 IRHLF770Z4 IRHLF7930Z4 2N763

    Untitled

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		PDF 2N7637-GA 2N7637 73E-46 50E-28 77E-10 23E-10 20E-02 2N7637-GA

    Untitled

    Abstract: No abstract text available
    Text: PD-94685E 2N7631T2 IRHLF7970Z4 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-39 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLF7970Z4 100K Rads (Si) 1.35Ω -1.5A IRHLF7930Z4 300K Rads (Si) 1.35Ω -1.5A


    Original     		PDF PD-94685E 2N7631T2 IRHLF7970Z4 IRHLF7970Z4 IRHLF7930Z4 MIL-STD-750, MlL-STD-750, O-205AF

    MO-03

    Abstract: No abstract text available
    Text: PD-97191A 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω


    Original     		PDF PD-97191A 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MO-036AB MlL-STD-750, -164A/ MO-03

    2N7635M1

    Abstract: IRHLG7630Z4 IRHLG7670Z4 MO-036AB MO036 2N763
    Text: PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω


    Original     		PDF PD-97191B 2N7635M1 IRHLG7670Z4 MO-036AB) IRHLG7630Z4 MlL-STD-750, -164A/ MO-036AB 2N7635M1 IRHLG7630Z4 IRHLG7670Z4 MO-036AB MO036 2N763

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF 2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA