SB15H45
Abstract: No abstract text available
Text: SB15H45 www.vishay.com Vishay General Semiconductor Photovoltaic Solar Cell Protection Schottky Plastic Rectifier High Barrier Technology for Improved High Temperature Performance This datasheet reflects specifications of product in actual application. FEATURES
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SB15H45
22-B106
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SB15H45
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SB15H45
Abstract: P600 diode
Text: New Product SB15H45 Vishay General Semiconductor Photovoltaic Solarcell Protection Schottky Rectifier High Barrier Technology for Improved High Temperature Performance This datasheet reflects specifications of product in actual application. FEATURES • Guardring for overvoltage protection
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PDF
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SB15H45
2002/95/EC
2002/96/EC
08-Apr-05
SB15H45
P600 diode
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SB15H45
Abstract: No abstract text available
Text: New Product SB15H45 Vishay General Semiconductor Photovoltaic Solarcell Protection Schottky Rectifier High Barrier Technology for Improved High Temperature Performance This datasheet reflects specifications of product in actual application. FEATURES • Guardring for overvoltage protection
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Original
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PDF
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SB15H45
2002/95/EC
2002/96/EC
18-Jul-08
SB15H45
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SB15H45
Abstract: No abstract text available
Text: New Product SB15H45 Vishay General Semiconductor Photovoltaic Solarcell Protection Schottky Rectifier High Barrier Technology for Improved High Temperature Performance This datasheet reflects specifications of product in actual application. FEATURES • Guardring for overvoltage protection
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Original
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PDF
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SB15H45
2002/95/EC
2002/96/EC
18-Jul-08
SB15H45
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Untitled
Abstract: No abstract text available
Text: New Product SS1P5L & SS1P6L Vishay General Semiconductor High-Current Density Surface Mount Schottky Barrier Rectifier FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses
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DO-220AA
J-STD-020,
2002/95/EC
2002/96/EC
08-Apr-05
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SS1P6L
Abstract: SS1P5L DO-220AA JESD22-B102 J-STD-002 89063 DSA00267082
Text: New Product SS1P5L & SS1P6L Vishay General Semiconductor High-Current Density Surface Mount Schottky Barrier Rectifier FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses
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Original
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PDF
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J-STD-020,
2002/95/EC
2002/96/EC
DO-220AA
18-Jul-08
SS1P6L
SS1P5L
DO-220AA
JESD22-B102
J-STD-002
89063
DSA00267082
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Untitled
Abstract: No abstract text available
Text: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability
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PDF
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UHF20FCT
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
J-STD-002
JESD22-B102
08-Apr-05
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JESD22-B102
Abstract: J-STD-002 UHF20FCT
Text: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability
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PDF
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UHF20FCT
ITO-220AB
2002/95/EC
2002/96/EC
18-Jul-08
JESD22-B102
J-STD-002
UHF20FCT
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Untitled
Abstract: No abstract text available
Text: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability
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PDF
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UHF20FCT
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
J-STD-002
JESD22-B102
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability
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PDF
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UHF20FCT
ITO-220AB
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability
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Original
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PDF
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UHF20FCT
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
J-STD-002
JESD22-B102
2011/65/EU
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability
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Original
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PDF
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UHF20FCT
ITO-220AB
2002/95/EC
2002/96/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability
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PDF
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UHF20FCT
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
08-Apr-05
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MSE1PJHM
Abstract: AEC-Q101-001 MSE1P
Text: MSE1PB thru MSE1PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES • • • • eSMP Series • • Top View Bottom View • • MicroSMP Very low profile - typical height of 0.65 mm Ideal for automated placement
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PDF
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J-STD-020,
AEC-Q101
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MSE1PJHM
AEC-Q101-001
MSE1P
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Untitled
Abstract: No abstract text available
Text: SS1P5L, SS1P6L www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES • Very low profile - typical height of 1.0 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses
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Original
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PDF
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J-STD-020,
AEC-Q101
DO-220AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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UH6PJ
Abstract: No abstract text available
Text: New Product UH6PJ Vishay General Semiconductor High Current Density Surface Mount Ultrafast High Voltage Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Oxide planar chip junction K • Ultrafast recovery time
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PDF
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J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
O-277A
18-Jul-08
UH6PJ
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V20100R
Abstract: V20100R-E3/4W JESD22-B102 J-STD-002
Text: New Product V20100R & VF20100R Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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V20100R
VF20100R
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
18-Jul-08
V20100R
V20100R-E3/4W
JESD22-B102
J-STD-002
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uh6pj
Abstract: J-STD-002
Text: New Product UH6PJ Vishay General Semiconductor High Current Density Surface Mount Ultrafast High Voltage Rectifier FEATURES eSMP TM • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Oxide planar chip junction • Ultrafast recovery time
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PDF
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O-277A
J-STD-020,
22-A111
2002/95/EC
2002/96/EC
18-Jul-08
uh6pj
J-STD-002
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Untitled
Abstract: No abstract text available
Text: U1B, U1C, U1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020,
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PDF
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J-STD-020,
DO-214AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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diode sg 89a
Abstract: No abstract text available
Text: MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES • • • • eSMP Series • • Top View Bottom View • • MicroSMP Very low profile - typical height of 0.65 mm Available Ideal for automated placement
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Original
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PDF
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J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
diode sg 89a
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V20100R
Abstract: No abstract text available
Text: New Product V20100R & VF20100R Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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PDF
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V20100R
VF20100R
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
08-Apr-05
V20100R
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Untitled
Abstract: No abstract text available
Text: New Product V20100R & VF20100R Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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Original
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PDF
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V20100R
VF20100R
O-220AB
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
18-Jul-08
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UH6PJ
Abstract: No abstract text available
Text: New Product UH6PJ Vishay General Semiconductor High Current Density Surface Mount Ultrafast High Voltage Rectifier FEATURES eSMP TM • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Oxide planar chip junction • Ultrafast recovery time
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Original
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PDF
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J-STD-020,
2002/95/EC
2002/96/EC
O-277A
08-Apr-05
UH6PJ
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JESD22-A114
Abstract: JESD22-A115 J-STD-002
Text: New Product MSE1PB thru MSE1PJ Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES • • • • eSMP Series • • Top View Bottom View • • MicroSMP • Very low profile - typical height of 0.65 mm Ideal for automated placement
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Original
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PDF
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J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
JESD22-A114
JESD22-A115
J-STD-002
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