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    Part ECAD Model Manufacturer Description Download Buy
    READ2351JSP#GC1 Renesas Electronics Corporation Ultra-Small Low Voltage Drive Input Output Full Range CMOS Dual Operational Amplifier Visit Renesas Electronics Corporation
    READ2352JSP#GC3 Renesas Electronics Corporation High Drivability & High Slew Rate, Input Output Full Range, CMOS Dual Operational Amplifier Visit Renesas Electronics Corporation
    READ2304GSN#GC0 Renesas Electronics Corporation High Drivability and High Slew Rate, Input Output Full Range, CMOS Dual Operational Amplifier, VIO ≤±6mV, SR=8V/μs , GBW=6MHz Visit Renesas Electronics Corporation
    READ2353JSP#GC1 Renesas Electronics Corporation READ2353JSP Visit Renesas Electronics Corporation
    READ2351JSP#GC3 Renesas Electronics Corporation Ultra-Small Low Voltage Drive Input Output Full Range CMOS Dual Operational Amplifier Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation READ2303GSP#GC0

    LINEAR IC
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    Mouser Electronics READ2303GSP#GC0 5,000
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    Renesas Electronics Corporation READ2353JSP#GC1

    ANALOG:GENERAL-PURPOSE LINEAR
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    Avnet Americas READ2353JSP#GC1 Reel 24 Weeks 2,500
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    Renesas Electronics America READ2353JSP#GC1 Tape & Reel (TR) 2,445 1
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    Gearbox Labs PART BREADBOARD SMALL

    400 POINT SOLDERLESS BREADBOARD
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    DigiKey PART BREADBOARD SMALL Bulk 1,436 1
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    Texas Instruments LM22673QMRE-ADJ/NOPB

    IC REG BUCK ADJ 3A 8SOPWR
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    Bristol Electronics LM22673QMRE-ADJ/NOPB 750
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    Texas Instruments LM22680QMRE-ADJ/NOPB

    IC REG BUCK ADJ 2A 8SOPWR
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    Win Source Electronics LM22680QMRE-ADJ/NOPB 18,229
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    READ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    READ2302GSP#GC0 Renesas Electronics IC OPAMP 8TSSOP Original PDF
    READ2302GSP#GC0 Renesas Electronics IC OPAMP 8TSSOP Original PDF
    READ2302GSP#GC3 Renesas Electronics IC MSIG CMOS 2 CIRCUIT 8TSSOP Original PDF
    READ2302GSP#GC3 Renesas Electronics IC MSIG CMOS 2 CIRCUIT 8TSSOP Original PDF

    READ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UZ210

    Abstract: P1275
    Text: TOSHIBA MOS MEMORY PRODUCTS TMM27512ADI-20, TMM27512ADI-25 DESCRIPTION The TMM27512ADI is a 65,536 words * 8 bits ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TMM27512ADI's access time is 200ns/250ns, and the TMM27512ADI


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    PDF TMM27512ADI-20, TMM27512ADI-25 TMM27512ADI 200ns/250ns, 200ns 130mA TMM27512ADI. UZ210 P1275

    Untitled

    Abstract: No abstract text available
    Text: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s


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    PDF TMS28C64 536-BIT

    i486

    Abstract: No abstract text available
    Text: SN74BCT2141 2-WAY 8K x 18 SYNCHRONOUS CACHE DATA RAM D3613. A UG UST 1990 2-Way 8K x 18 Bit Architecture FN PACKAGE TOP VIEW Synchronous Read and Write Access at 50 MHz Clock Frequency Incorporates Burst Counter for Burst-Read (Read-Hit) Cycles or Burst-Write (Line-Fill)


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    PDF SN74BCT2141 D3613. I486TM DQ13s BCT2141 i4861 i486

    54256AP

    Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
    Text: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without


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    PDF TC54256AP/AF TC54256AP/AF 28-pin 200ns TC57256AD TC54256AP/AF. 54256AP TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap

    NCC equivalent

    Abstract: No abstract text available
    Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors


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    PDF TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent

    A1051

    Abstract: No abstract text available
    Text: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs


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    PDF TMS27C291, TMS27C292 384-BIT TMS27PC291 27C/PC291-3 27C/PC291 27C/PC291-5 27C/PC291-35 27C/PC291-45 A1051

    27C020-12

    Abstract: 27PC020-12 LS020 A1025 LS020B 2097152-BIT
    Text: TMS27C020 2097152-BIT UV ERASABLE PROGRAMMABLE TMS27PC020 2097152-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS020B - N O V E M B E R 1990 - REVISED JU N E 1995 • Organization . . . 256K x 8 J PACKAGE TOP VIEW • Single 5-V Power Supply • Operationally Compatible With Existing


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    PDF TMS27C020 2097152-BIT TMS27PC020 LS020B 32-Pln 32-Lead 27C/PC020-12 27C/PC020-15 27C/PC020-20 27C020-12 27PC020-12 LS020 A1025

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.


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    PDF TC58V64FT/DC 64-MBIT TC58V64FT/DC 016-bit) 528-byte 44/40-P-400-0

    TD-172

    Abstract: 3B3 diode TOLD9151MB
    Text: TOSHIBA VLD Technical Data TOLD9151MB Units in: mm • Small package high power index guided type M Q W InGaAlP V L D ■ Package flange: 05.6m m ■ Applications include: Read/write optical disk systems *5 .6 Surface ^ Pin Connection 0.03 * 4 .4 M A X 5 i


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    PDF OLD9151MB OLP9151MB_ -30mW TD172S2 0Qlb372 TD-172 3B3 diode TOLD9151MB

    Untitled

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­


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    PDF TC57256AD-12 TC57256AD 120ns, 30mA/8 TC57256AD.

    74170

    Abstract: OF IC 74170
    Text: TTL MSI TYPES SN54170, SN54LS170. SN74170, SN74LS170 4-BY-4 REGISTER FILES WITH OPEN-COLtECTOR OUTPUTS B U L L E T IN N O , D L -S 7 6 1 1 3 4 9 , M A R C H 1 9 7 4 — R E V IS E D O C T O B E R 1 9 7 6 • Separate Read/Write Addressing Permits Simultaneous Reading and Writing


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    PDF SN54170, SN54LS170. SN74170, SN74LS170 LS170 SN54LS670 SN74LS670 SN64LS170 74170 OF IC 74170

    TC5316200bP

    Abstract: TC5316200BP/BF
    Text: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.


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    PDF TC5316200BP/BF TC5316200BP/BF 600mil 42-pin 44-pin TC5316200BP TC5316200BF

    TC57256AD

    Abstract: No abstract text available
    Text: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It


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    PDF TC57256AD-12 TC57256AD-120 TC57256AD-150 TC57256AD 30mA/8 TC57256AD.

    character generater

    Abstract: No abstract text available
    Text: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.


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    PDF TC534200P/F 600mil 40pin 525mil 150ns 20/uA TC534200P TC534200P/F-- character generater

    S3036

    Abstract: No abstract text available
    Text: 6. Contact Sensor Module 6-1 Outline The contact sensor m odule is an im age reader unit which integrates an im age sensor, lens, light source and control circuit. T he contact sensor m odule has the follow ing fea­ tures. 1 O ptical design is not necessary


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    PDF

    CT 2048

    Abstract: D8228
    Text: SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L 2048 x 9,4096 x 9,8192 x 9,16384 x9 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES SCAS226A - FEBRUARY 1993 - REVISED SEPTEMBER 1995 Reads and Writes Can Be Asynchronous or Coincident Organization: - SN74ACT7203L - 2048 x 9


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    PDF SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L SCAS226A SN74ACT7203L SN74ACT7204L SN74ACT7205L IDT7203/7204 CT 2048 D8228

    TIS152

    Abstract: No abstract text available
    Text: TLS1521 THIN-FILM 6-CHANNEL READ/WRITE PREAMPLIFIER D3625, DECEM BER 1 990-R E V IS E D MARCH 1991 • Differential Input Capacitance . . . 35 pF Typ • Low Input Noise Voltage . . . 0.5 nV/VRz Typ FN PACKAGE TOP VIEW 9 z • o o <••> > y o 2 1 x


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    PDF TLS1521 D3625, 990-R 40/Ivv) TIS152

    Untitled

    Abstract: No abstract text available
    Text: SN74ACT7881 1024 x 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCAS227C - FEBRUARY 1993 - REVISED FEBRUARY 1996 • Member of the Texas Instruments Wldebus Family • Independent Asynchronous Inputs and Outputs • Input-Ready, Output-Ready, and Half-Full Flags


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    PDF SN74ACT7881 SCAS227C SN74ACT7882, SN74ACT7884, SN74ACT7811 50-pF 68-Pin 80-Pln DO-D17

    27C512-3

    Abstract: 27c512-45 TG-14 27C512 27C512-2
    Text: TEXAS "Ô 961725 INSTR TEX A S {ASIC/MENORY} INS TR PRODUCT PREVIEW 77 d e A S IC /M EM O R V T 0 ^ 1 7 5 5 77C 4 0 9 33 G D Ll ü li 3 3 D TMX27C512 524,288-BIT ERASABLE PROGRAM M ABLE READ ONLY M EM O RY N O V E M B E R 1965 J PACKAGE Organization . . . 64K x 8


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    PDF TMX27C512 288-BIT 27C512-2, 27C512-20 27C512, 27C512-25 27C512-3, 27C512-4, 27C512-45 27C512-3 TG-14 27C512 27C512-2

    TLR306

    Abstract: TLR308 TLG306 TLR 308 TLG308 TLR307 toshiba TLr307 TLG307 TOSHIBA LED DISPLAY TLG3
    Text: TOSHIBA TOSHIBA LED DISPLAY TLG306, TLG307, TLG308, TLG309 TLR306, TLR307, TLR308, TLR309 • 15mm Character Height Numerical and Polarity Display. • Application : Numerical Readout for Instrument and Consumer Product.


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    PDF TLG306 TLG307 TLG308 TLG309 TLR306 TLR307 TLR308 TLR309 TLG306, TLG307, TLR 308 toshiba TLr307 TOSHIBA LED DISPLAY TLG3

    Untitled

    Abstract: No abstract text available
    Text: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte


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    PDF TMS28F040 304-BIT SMJS040-DECEMBER A0-A18 32-pin 40-pin

    d8253

    Abstract: No abstract text available
    Text: SN74AS632A 32 BIT PARALLEL ERROR DETECTION AND CORRECTION CIRCUIT D 3 3 9 7 , JAN U AR Y 1990 • Detects and Corrects Single-Bit Errors • Detects and Flags Dual-Bit Errors • Built-In Diagnostic Capability • Fast W rite and Read Cycle Processing Times


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    PDF SN74AS632A d8253

    A18D0

    Abstract: TC534000AP
    Text: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the


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    PDF TC534000AP/AF 288words TC534000AP 150ns, TC534000AP/ 600mil 32pin 525mil A18D0

    DR856

    Abstract: K/FND COMMON CATHODE DISPLAY
    Text: TOSHIBA TLG346T,TLG347T,TLS346T.TLS347T.TLR346T,TLR347T TOSHIBA LED DISPLAY TLG346T, TLG347T, TLS346T TLS347T, TLR346T, TLR347T • 10mm 0.4” Character Height Numerical Display. • Application : Numerical Readout for Instrument and Consumer Product. •


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    PDF TLG346T TLG347T TLS346T TLS347T TLR346T TLR347T TLG346T, TLG347T, TLS347T, DR856 K/FND COMMON CATHODE DISPLAY