Untitled
Abstract: No abstract text available
Text: 8 5 6 7 4 NOTES: D 2 3 ECN # 1. MOUNTING: Pa ne l mo unting ho le .171" 4.34mm Dia me te r Lite p ip e fro m .200" to .500" use g ro mme t re ta ine r RTN 150 Lite p ip e fro m .500" to 2.00" the sp ring re ta ine r RTN 250 is re c o mme nd e d fo r rig id ity
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ECR111009AZ01
11/ax
94-HB
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Untitled
Abstract: No abstract text available
Text: 8 5 6 7 4 2 3 1 NOTES: REVISIONS ECN # 1. MOUNTING : Pa ne l mo unting ho le .180" X .180" 4.57mm X 4.57mm Lite p ip e fro m .300" to .500" use g ro mme t re ta ine r (RTN150) Lite p ip e fro m .500" to 2.00" the sp ring c lip (RTN250) is re c o mme nd e d fo r rig id ity
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111009AZ01
052511ED01
175mm)
508mm)
94-HB
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LDR 03
Abstract: LDR05 valvo handbuch valvo handbuch rohren ORP60 valvo 18504 LDR -03 valvo BPY10 18550 Valvo
Text: VALVO-HÀKOBUCH Spezialröhren II 19E7 j D a s V A L V O -H a n d b u c h Sp e zialröh re n I enthält d ie G ru p p e n V erstärkerröh ren O sz illo g ra fe n rö h re n M on ito rrö h re n P ro je ktio n s-B ild rö h re n L ich tpunkt-A btaströh ren
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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smd transistor LY
Abstract: a26 transistor
Text: 1.25A High Efficiency Switching Regulator D escription T he CS-3972 is a 1.25A, 60V, c u r re n t m o d e , h ig h efficiency, s w itc h in g re g u la to r circuit. It can be co n fig u re d in b u ck , b o o st, fo rw ard , iso lated a n d n o n -iso lated to p o lo
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CS-3972
S-3972
CS-3972DW16
CS-3972T5
CS-3972TV5
CS-3972TH5
CS-3972N8
O-220
smd transistor LY
a26 transistor
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v60rt
Abstract: No abstract text available
Text: Using the bq3285/7E in a Green or Portable Environment Introduction Enabling the 32.768kHz Output The bq3285/7E Real-Time Clock is a PC/AT-compatible real-tim e clock th a t incorporates th re e enhanced fea tu re s to facilitate power m anagem ent in G reen desktop
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bq3285/7E
32kHz
300-mil
150-mil
bq3285ES
bq3285ESS
bq3285LS
bq3285LSS
v60rt
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1507 Series Single-In-Line Delay Lines
Abstract: No abstract text available
Text: Single-In-Line Delay Lines 14 pins SIP 10 Taps 1507 SERIES: Specifications: 10 Equal Taps Low Profile M eets or Exceeds: M IL-D -23859C O perating Tem peratu re Range: - 55°C to + 125°C Storage Tem peratu re Range: 55°C to + 125°C Tem perature C oefficient: 100 PPM/°C
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-23859C
1507-200B
1507-250B
1507-50C
1507-200C
1507-300G
1507-500G
1507 Series Single-In-Line Delay Lines
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Untitled
Abstract: No abstract text available
Text: Specifications: • ■ ■ ■ ■ ■ ■ ■ ■ 10 Equal Taps Low Profile Meets or Exceeds: M IL-D -23859C O perating Tem peratu re Range: 55 C to 125 C Storage Tem peratu re Range: 55 C to * 125 C Tem perature C oefficient: 100 PPM C Dielectric B reakdow n: 50 Vdc:
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-23859C
507-20A
507-40A
507-50A
1507-20B
1507-50B
1507-20CIB
1507-20C:
1507-50C;
1507-200C
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Untitled
Abstract: No abstract text available
Text: 1N4099 thru 1N4135D I n ter n a tio n a l S e m ic o n d u c to r , I n c . 1N4614 thru 1N4627D 400 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES MAXIMUM RATINGS * Junction T e m p e ra tu re : Storage T em peratu re: DC Pow er Dissipation: Pow er D erating:
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1N4099
1N4135D
1N4614
1N4627D
1N4099-1N4135
1N4614-1N4627
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Untitled
Abstract: No abstract text available
Text: P o s i t i on p o s i t ion — 12 9 . 6 8 ±0,05 f— d— b— Re i he row Re i he X i_n 411 rights remué row tile Reihte Vorbehalten/ 11x I T I = 22 72x 0 , 3 ±o.oi - \_ \_ / 4* 00,2 \_ J <TT1 5:1 kinked pins dt both ends of the connector 1 Lochbild
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11-Nr
D-32339
76/xm
30juin
50/iin
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Untitled
Abstract: No abstract text available
Text: Magnet Wire Terminals AMPLIVAR and MAG-MATE AMP Catalog 1307612 Revised 7-01 T ec h n ical In fo rm ation Circular Mil Area (CMA) and Diameter for Magnet Wires (AWG Wire Size Range 25-8) AW G B a r e W ir e B a re O ia . W ir e CM A B a re in. mm 25 24'/s
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IN753a
Abstract: 35219F IN757A IN957B IN753 1N96SB 1N753A ITT d035 Fairchild sharp zener diodes series 66 zener 7.2 V
Text: Fairchild Sem iconductors Sem iconductors Zener Diodes A B S O L U T E M A X IM U M R A T IN G S Zener D iodes - 400m W IN957B Series O p e ra tin g te m p e ra tu re — 65*C to +150*C S to ra g e te m p e ra tu re _ 175’ C _ 5% Tolerance
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400mW_
1N957B
35215G
1N958B
5216A
1N959B
35217X
1N960B
1N753A
35239R
IN753a
35219F
IN757A
IN957B
IN753
1N96SB
1N753A ITT
d035 Fairchild
sharp zener diodes series 66
zener 7.2 V
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Untitled
Abstract: No abstract text available
Text: I n ter n a t/ onal S e m ic o n d u c t o r I n c . 1N3154 thru 1N3157A TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 8.4 V O LT N OM INAL ZENER VOLTAGE A. MAXIMUM RATINGS O p e ra tin g T e m pe ratu re: S to ra g e T e m p e ra tu re : DC P ow er D issipatio n:
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1N3154
1N3157A
00005b0
T00037Ã
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MBM27128-25
Abstract: 27128-25 MBM27128 MBM27128-30 27128-20 INTEL 27128 MBM27128-20 Fujitsu 511
Text: FUJITSU MOS Memories MBM27128-20, MBM27128-25, MBM27128-30 UV Erasable 131,072-Bit Read Only Memory Description T h e F u jits u M BM 27128 is a hig h speed 131,072-bit s ta tic N-channei M O S e ra s a b le a nd e le c tric a lly re p ro g ra m m a b le re a d o n ly
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MBM27128-20,
MBM27128-25,
MBM27128-30
072-Bit
MBM27128
28-pin
32-pin)
MBM27128.
MBM27128-25
27128-25
MBM27128-30
27128-20
INTEL 27128
MBM27128-20
Fujitsu 511
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si - 4102
Abstract: No abstract text available
Text: P o s ¡ t i on position Re ¡ he row Re i he row B B S S X . Vorbehalten/ ill rifils resentí I I I I I I I I I I I I 11x [7] 72x ^ 00,2 =22 0 , 3 ±0 , 0 1 Alle Retfilt -I l I I I I I I I I I I I- LochbiId bodrd d r i l l i n g s
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diode IN456
Abstract: IN456
Text: 1N456 I n ter n a t/ onal S e m ic o n d u c t o r I n c . thru 1N463/A LOW LEAKAGE DIODES And Other Diodes DIFFUSED SILICON PLANAR ABSOLUTE MAXIMUM RATINGS NoteD Tem peratures S to ra g e T e m p e ra tu re : • M axm um J u n c tio n O p e ra tin g T e m p e ra tu re :
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1N456
1N463/A
IN456/A
1N457/A
1G0G37Ã
diode IN456
IN456
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njmo82
Abstract: No abstract text available
Text: DUAL J-FET INPUT OPERATIONAL AMPLIFIER NJM072B/082B, 072/082 T h e N JM 072B /082B & N JM 072/082 a re d u a l J F E T in p u t o p e ra tio n a l am plifiers. T h e y fe a tu re low in p u t bias an d offset c u rre n ts, high in p u t im p e d a n ce a n d fast slew ra te . T h e low h arm o n ic d is to rtio n and low noise m ake th e m ideally suit for
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NJM072B/082B,
/082B
500mW
300mW
250mW
800mW
--10kQ,
njmo82
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4728a
Abstract: N4749A
Text: N N D 1 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 4728 thru 1 1 WATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES 4764 MAXIMUM RATINGS O pe rating T e m pe ratu re: S to ra g e T e m p e ra tu re : DC Pow er D issipa tion: P ow er D erating:
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1N4728
1N4764D
DD375
4728a
N4749A
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Untitled
Abstract: No abstract text available
Text: 2 B 5 7 6 P o s i \ i on position 9,68 d— b— Re i he row X 5:1 % f— 1 1 x 2 =22 ± 0.05 8 , 7 8 * 0.05 2 5 +0,1 -0,3 Re i he row X i_n X i_n -— a 11* 0 ( = 22) V 0 , 3 ±0.01 72x ^ 00,2 1 B , 3 E, ± 0 , 0 5 5:1 kinked pins at both ends of the connector
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76/xm
30jiiin
27/im
50/iin
D-32339
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Untitled
Abstract: No abstract text available
Text: 1N4954 1N5968 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N4996 1N5969 5 WATT TRANSFER MOLDED ZENER DIODES MAXIMUM RATINGS * O p e ra tin g T e m p e ra tu re : S to ra g e T e m p e ra tu re : FEATURES -65 °C to +175 °C -65 °C to +200 °C
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1N4954
1N5968
1N4996
1N5969
1N5868
100ns
100us
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Untitled
Abstract: No abstract text available
Text: I n ter n a tio n a l S e m ic o n d u c t o r I n c , 1N5518 thru 400 MILLIWATT HERMETICALLY SEALED GLASS SILICON l o w n o is e MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re : S to ra g e T e m p e ra tu re : DC P ow er D issip a tio n Pow er D era ting:
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1N5518
1N5546D
0DD0b35
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Untitled
Abstract: No abstract text available
Text: 6 Amp Schottky OR’ing Rectifier UPS615 — L .035 .070 REF. .072 { — T- .035 .173 Mounting Pad Dimensions Microsemi Catalog Number Industry P art Number Working Peak R epetitive Peak Reverse Voltage Reverse Voltage • Powermite 3 package • S ch ottky barrier re c tifie r
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UPS615
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Untitled
Abstract: No abstract text available
Text: 3 Amp Schottky OR’ing Rectifier UPS315 — L .035 .070 REF. .072 { — T- .035 .173 Mounting Pad Dimensions Microsemi Catalog Number Industry P art Number Working Peak R epetitive Peak Reverse Voltage Reverse Voltage • Powermite 3 package • S ch ottky barrier re c tifie r
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UPS315
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Untitled
Abstract: No abstract text available
Text: 6 Amp Schottky OR’ing Rectifier UPS615 — L .035 .070 REF. .072 { — T- .035 .173 Mounting Pad Dimensions Microsemi Catalog Number Industry P art Number Working Peak R epetitive Peak Reverse Voltage Reverse Voltage • Powermite 3 package • S ch ottky barrier re c tifie r
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UPS615
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