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    RDSF Search Results

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    RDSF Price and Stock

    ams OSRAM Group AS3682/83 EVALUATION BOARD SFL

    BOARD EVALL AS3682/83 SFL
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    DigiKey AS3682/83 EVALUATION BOARD SFL Box 4 1
    • 1 $175
    • 10 $175
    • 100 $175
    • 1000 $175
    • 10000 $175
    		Buy Now

    Pulse Electronics Corporation NMOMMRDSFME

    NMO 3.5 ROUND MAG MOUNT, 12 DS,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NMOMMRDSFME Bag 41
    • 1 -
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    • 100 $42.43122
    • 1000 $42.43122
    • 10000 $42.43122
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    Avnet Americas NMOMMRDSFME Bag 8 Weeks 41
    • 1 -
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    • 100 $36.49723
    • 1000 $34.92181
    • 10000 $33.47768
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    Sager NMOMMRDSFME 1
    • 1 $36.98
    • 10 $35.48
    • 100 $34.55
    • 1000 $34.55
    • 10000 $34.55
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    Hirose Electric Co Ltd MI20-50RD-SF(51)

    CONN COMPACT FLASH CARD R/A SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MI20-50RD-SF(51) Tray
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    Hirose Electric Co Ltd MI20-50RD-SF(71)

    CONN COMPACT FLASH CARD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MI20-50RD-SF(71) Tray
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    Vishay Dale RDSF0100440R0JDBNI

    100W 440 OHM ROUND-WIRE NON-INDU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RDSF0100440R0JDBNI Bulk 1
    • 1 $395.52
    • 10 $395.52
    • 100 $395.52
    • 1000 $395.52
    • 10000 $395.52
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    Find more RDSF price and stock on Findchips.com

    RDSF Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RDSF002510K00JDB00 Vishay Dale 25W 10K OHM ROUND-WIRE FIXED Original PDF
    RDSF00251R300JDB00 Vishay Dale 25W 1.3 OHM ROUND-WIRE FIXED Original PDF
    RDSF005010R00JDB00 Vishay Dale 50W 10 OHM ROUND-WIRE FIXED Original PDF
    RDSF01001K075JDBNI Vishay Dale 100W 1075 OHM ROUND-WIRE NON-IND Original PDF
    RDSF0100440R0JDBNI Vishay Dale 100W 440 OHM ROUND-WIRE NON-INDU Original PDF
    RDSF0100470R0JDBNI Vishay Dale 100W 470 OHM ROUND-WIRE NON-INDU Original PDF

    RDSF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CS62 www.vishay.com Vishay Milwaukee Customer Special Roundwire Resistor CS62 , Wirewound Resistors, Industrial Power, Tubular, Fixed, Adjustable, RDEF, RDSF, RDEA, RDSA CAPABILITIES • Customer special design options include -Electrical: Tolerance, wattage, resistance, dielectric


    Original     		PDF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    HDWB, HDWK

    Abstract: RDEA, RDSA RDEF, RDSF RBEA, RBSA RBEF, RBSF RBEF RBSA
    Text: HDWB, HDWK www.vishay.com Vishay Milwaukee Hardware Kits and Specifications for RBEF, RBSF, RBEA, RBSA, RDEF, RDSF, RDEA, RDSA Resistors • RBEF, RBSF datasheet: www.vishay.com/doc?31807 • RDEF, RDSF datasheet: www.vishay.com/doc?31829 • RBEA, RBSA datasheet: www.vishay.com/doc?31809


    Original     		PDF RBEF030025R00KFBCP HDWB08012012000B00 HDWB08012018000B00 HDWB08012022000B00 RBxx0040, RBxx0090, RDxx00, RDxx0235, RDxx0240 HDWB04012800008B00 HDWB, HDWK RDEA, RDSA RDEF, RDSF RBEA, RBSA RBEF, RBSF RBEF RBSA

    Untitled

    Abstract: No abstract text available
    Text: RDEF, RDSF www.vishay.com Vishay Milwaukee Wirewound Resistors, Industrial Power, Tubular, Roundwire RD , Fixed (RDEF, RDSF) FEATURES • High temperature silicone or vitreous enamel coatings • Non-inductive options available • All welded construction


    Original     		PDF RDEF0008 RDEF0012 RDEF0015 RDEF0020 RDEF0025 RDEF0030 RDEF0045 RDEF0050 RDEF0051 RDEF0061

    Untitled

    Abstract: No abstract text available
    Text: MX25L2026E MX25L2026E DATASHEET P/N: PM1580 1 REV. 1.4, NOV. 14, 2013 MX25L2026E Contents FEATURES. 4


    Original     		PDF MX25L2026E PM1580

    Untitled

    Abstract: No abstract text available
    Text: MX25L6475E MX25L6475E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1831 1 REV. 1.1, NOV. 11, 2013 MX25L6475E Contents 1. FEATURES. 4


    Original     		PDF MX25L6475E PM1831

    Untitled

    Abstract: No abstract text available
    Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4


    Original     		PDF MX25L1673E PM1912

    8-USON

    Abstract: No abstract text available
    Text: MX25L512E MX25L512E DATASHEET P/N: PM1669 1 REV. 1.3, DEC. 10, 2013 MX25L512E Contents FEATURES. 4


    Original     		PDF MX25L512E PM1669 8-USON

    Serial Flash

    Abstract: No abstract text available
    Text: MX25L25735F MX25L25735F DATASHEET P/N: PM1799 MX25L25735F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6


    Original     		PDF MX25L25735F PM1799 Serial Flash

    MX25L12873F

    Abstract: MXIC MX25l12873f
    Text: MX25L12873F MX25L12873F DATASHEET P/N: PM1914 MX25L12873F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6


    Original     		PDF MX25L12873F PM1914 MX25L12873F MXIC MX25l12873f

    Untitled

    Abstract: No abstract text available
    Text: MX25L12875F MX25L12875F DATASHEET P/N: PM1855 MX25L12875F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6


    Original     		PDF MX25L12875F PM1855

    2SK1925

    Abstract: No abstract text available
    Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5


    OCR Scan     		PDF 2SK1737 2SK1738 T0220 2SK1921* 2SK2142* 2SJ254 0220M 2SK1925

    F5001H

    Abstract: T0220F-5 T151
    Text: F5001H FUJI POWER MOS-FET IN'EUGENT POWER SWITCH Outline Drawings 10*0.2 i.5 ± 0 .2 0 5 .2 iO .2 I -eatures ►C PU direct drive >Cvertemperature, Overcurrent, Overvoltage protection ►Cpen load, short-circuit detection 12^ »L^wer RDSfon IN ST GND OU T


    OCR Scan     		PDF F5001H T0220F-5pins T0220F-5 F5001H T0220F-5 T151

    Untitled

    Abstract: No abstract text available
    Text: m H a r r i 0054414 7flt. • HAS . s . . f ^ _ . . R F H 2 5 N R F H 2 5 N . ^ 1 2 8 N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features TO-218AC TOP VIEW • 25A , 180V and 2 0 0V • rDSf011) = 0 .1 5 ft • S O A is P ow er-D issipation Lim ited


    OCR Scan     		PDF O-218AC rDSf011) RFH25N18 RFH25N20 S-37166

    GC20930

    Abstract: 6v dc motor IG 2200 19
    Text: SGS-THOMSON STP25N06 STP25N06FI IM N - CHANNEL EN H A N C EM EN T M ODE PO W ER M OS TR A N SISTO R TYPE STP25N06 STP25N06FI . . . . . . V dss RDSfon 60 V 60 V 0.07 0.07 Id a il 25 A 16 A AVALANCHE RUG G EDN ESS TEC HNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C


    OCR Scan     		PDF STP25N06 STP25N06FI STP25N06FI O-220 ISOWATT22Q STP25N06/FI GC20930 6v dc motor IG 2200 19

    F5001

    Abstract: F5001H
    Text: F5001H FUJI POWER MOS-FET IN'EUGENT POWER SWITCH Outline Drawings • -eatures • C PU direct drive • C vertemperature, Overcurrent, Overvoltage protection • Cpen load, short-circuit detection 1 2 3' • U w e r RDSf0n} IM I • high surge capability


    OCR Scan     		PDF F5001 T0220F-5pins T0220F-5 F5001H

    fu110

    Abstract: No abstract text available
    Text: I n t e r n a t i o n a l R e c t if ie r HEXFET Power MOSFETS V B%SS Draln-to-Source BreakdownVoltage (Volt. Part Number RDSfon) On-State Resistance (Ohms) iQContinuous Drain Current 100* C 25* C (Amps) (Amps) RthJC Max Thermal Resistance row) PdOTo 2S“C


    OCR Scan     		PDF O-251AA IRFD9014 IRFD9024 IRFD9110 IRFD9120 IRFD9210 IRFD9220 IRFU4105 IRFU014 IRFU024N fu110

    IRFD120

    Abstract: IRFD121 IRFD122 IRFD123 irfd1201
    Text: Standard Power MOSFETs - IRFD120, IRFD121, IRFD122, IRFD123 File Number 2315 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistore N -C H A N N EL E N H A N C EM EN T M O DE 1.1 A and 1.3 A, 60 V - 100 V rDsfoni= 0.3 O and 0.4 O


    OCR Scan     		PDF IRFD120, IRFD121, IRFD122, IRFD123 IRFD123 IRFD120 IRFD121 IRFD122 irfd1201

    Untitled

    Abstract: No abstract text available
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta - 25 O RDSfon ID •VGS Applications Voss CV> V(tff ID (A) PD m Teh CC) VGSS(off) (V> RDS (on) m ax(Q) |Yls| @ VDS - ID ID <A) VGS (V) VDS a ID (A)


    OCR Scan     		PDF 2SK1424 2SK1425 2SK212 2SK2395 2SK304 17Q7ti

    ufn330

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		PDF UFN332 UFN333 UFN330 UFN331 UFN332 ufn330

    VPT09050

    Abstract: *08P06P transistor SMD 352
    Text: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3


    OCR Scan     		PDF SPD08P06P SPU08P06P VPT09050 VPT09051 P-T0252 Q67040-S4153-A2 P-T0251-3-1 Q67040-S4154-A2 VPT09050 *08P06P transistor SMD 352

    VN1310N3

    Abstract: No abstract text available
    Text: Gì Super tex inc. VN13A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS/ Order Number / Package ^ D S O N ' d io n i (max) (min) TO-39 TO-92 40V 8Ì2 0.5A VN1304N2 VN1304N3 60V 8 ii 0.5A VN1306N2 VN1306N3


    OCR Scan     		PDF VN13A VN1304N2 VN1306N2 VN1310N2 VN1304N3 VN1306N3 VN1310N3 VN1310N3

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ9802DY S e m i c o n d u c t o r s Dual N-Channel Reduced Qg, Fast Switching MOSFET Product Summary V D S V 20 r D S (on)(^) I d (A ) 0.055 @ V os = 4.5 V ± 4 .5 0.075 @ Vo s = 3.0 V ± 3 .8 Dì U SO-8 s, Tl Q _ o, [T S2 CE G- GE D, °i ~ T |


    OCR Scan     		PDF 9802DY S-51303-- 19-Dec-96

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B

    4E7 philips

    Abstract: KY 711 VN2406L FL 210 transistor
    Text: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n


    OCR Scan     		PDF 711002b VN2406L MBB073 711Dfl5h D0bfl057 MC9357 4E7 philips KY 711 VN2406L FL 210 transistor