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    RDRAM 667 Search Results

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    HP 54720D

    Abstract: No abstract text available
    Text: R How to Measure RDRAM* System Clock Jitter Application Note AP- 667 June 1999 Order Number: 292225-002 R How to Measure RDRAM* System Clock Jitter Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		PDF AP-667 HP 54720D

    HP 54720D

    Abstract: LC584 HP54720 HP54720D RIMM-Module Intel AP-667 29222* intel
    Text: R How to Measure RDRAM System Clock Jitter Application Note AP- 667 March 1999 Order Number: 292225-001 R How to Measure RDRAM System Clock Jitter Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		PDF AP-667 HP 54720D LC584 HP54720 HP54720D RIMM-Module Intel AP-667 29222* intel

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    54-WBGA

    Abstract: 711Mbps
    Text: RDRAM Module Code Information 1/2 Last Updated : February 2009 MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory Module(M) 10. Component Generation M : M-die 2. Module Configuration D : 32 bit RIMM (232pin) A : A-die B : B-die


    Original     		PDF 232pin) 294pin) 600Mbps 300MHz) 711Mbps 356MHz) 800Mbps 400MHz) 54-WBGA 711Mbps

    msm665x

    Abstract: MSM6679A-110TS-K I2921 AD129 MSM6679A110TSK ADC8
    Text: J2F0012-18-71 ¡ 電子デバイス 作成：1998年 7月 MSM6679A-110 l 前回作成：1997年10月 MSM6679A-110 不特定話者／特定話者認識録音／再生、音声合成、音声認識プロセッサ n 概要 MSM6679A-110音声認識LSIは不特定話者認識、特定話者認識、録音、再生、音声合成の5つの機能


    Original     		PDF J2F00121871 MSM6679A-110 MSM6679A110 MSM6679A110LSI5 10kHz MSM6650 28kbps 9600bps81 84QFJPLCC msm665x MSM6679A-110TS-K I2921 AD129 MSM6679A110TSK ADC8

    256Mbyte DDR SDRAM with 64bit data bus

    Abstract: PC133 133Mhz cl3 ELPIDA ECT-TS-0198 hitachi part numbering DDR266B DDR200 DDR266A hitachi part "numbering" RDRAM
    Text: Hitachi & NEC DRAM Part Numbering System Elpida Memory, Inc. 2000, 2001 ECT-TS-0198 December 13, 2001 1. Hitachi DRAM Component Parts Numbering System e.g. 256Mbit SDRAM HM 52 25 40 5 B L TT 1) (2) (3) (4) (5) (6)(7) (8) (1)Hitachi IC Memory A6 (9) (2)Product Family


    Original     		PDF ECT-TS-0198 256Mbit 64Mbit, 128Mbit, 256Mbit, 512Mbit 64MByte 96MByte 128MByte 192MByte 256Mbyte DDR SDRAM with 64bit data bus PC133 133Mhz cl3 ELPIDA hitachi part numbering DDR266B DDR200 DDR266A hitachi part "numbering" RDRAM

    0909NS

    Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
    Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA


    Original     		PDF 16K/16ms 4K/32ms 8K/64ms 16K/32ms 8K/32ms 2K/16ms 4K/64ms 429ns 667ns 0909NS GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    MT4LSDT464HG-10EB3

    Abstract: No abstract text available
    Text: 4 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT4LSDT464 L H For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View, 133 MHz/100 MHz) 144-Pin Small-Outline DIMM • JEDEC-standard PC66 and PC100 rev 1.0 144-pin,


    Original     		PDF PC100 144-pin, 096-cycle MT4LSDT464 128MB MT4VR6418AG 256MB MT8VR12816AG MT8VR12818AG MT4LSDT464HG-10EB3

    dram 72-pin simm 128mb

    Abstract: PC133 registered reference design type 760 t85
    Text: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant


    Original     		PDF PC66-, PC100- PC133-compliant 168-pin, 128MB 096-cycle MT4VR6418AG 256MB MT8VR12816AG dram 72-pin simm 128mb PC133 registered reference design type 760 t85

    MT8LSDT1664HG-10EB1

    Abstract: SO-DIMM 144-pin
    Text: 16 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT8LSDT1664 L H For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View, 100 MHz) 144-Pin Small-Outline DIMM • JEDEC-standard, PC66 and PC100, rev 1.0, 144pin, small-outline, dual in-line memory module


    Original     		PDF PC100, 144pin, 128MB 096-cycle MT8LSDT1664 MT4VR6418AG 256MB MT8VR12816AG MT8LSDT1664HG-10EB1 SO-DIMM 144-pin

    Untitled

    Abstract: No abstract text available
    Text: 8 MEG x 64 SDRAM SODIMM MT8LSDT864 L H SMALL-OUTLINE SDRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View, 100 MHz) 144-Pin Small-Outline DIMM • JEDEC-standard PC66 and PC100, rev 1.0, 144-pin,


    Original     		PDF PC100, 144-pin, 096-cycle MT8LSDT864 128MB MT4VR6418AG 256MB MT8VR12816AG MT8VR12818AG

    Untitled

    Abstract: No abstract text available
    Text: 4, 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT4LSDT464A, MT4LSDT864A MT4LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-*, PC100- and PC133-compliant


    Original     		PDF PC66-* PC100- PC133-compliant 168-pin, 128MB 096-cycle -750A1 -745A1 -850A1 -845A1

    MT16LD464AG

    Abstract: No abstract text available
    Text: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant


    Original     		PDF PC66-, PC100- PC133-compliant 168-pin, 128MB 096-cycle -750A1 -745A1 -850A1 -845A1 MT16LD464AG

    KM49RC2H-A60

    Abstract: RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram
    Text: KM48RC2H/KM49RC2H Concurrent RDRAM 2M X 8 / 2 M x 9 Concurrent RDRAM Overview Ordering Information The 16 / 18Mbit Concurrent Rambus DRAMs RDRAM are Part No. Org. frequency KM49RC2H-A60 2M X 9 600Mhz extremely high-speed CMOS DRAMs organized as 2M words


    OCR Scan     		PDF KM48RC2H/KM49RC2H 18Mbit 667MHz SHP-32 KM49RC2H-A60 RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram

    RDRAM CONCURRENT

    Abstract: samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H
    Text: Preliminary Concurrent RDRAM KM48 9 RC2H 16/18Mbit R D R A M 2M X 8/9bit Concurrent RAMBUS DRAM Revision 0.7 February 1998 Rev. 0.7 (Feb. 1998) Preliminary Concurrent RDRAM KM48(9)RC2H Revision History Revision 0.5 (October 1997) - Preliminary • . Changed Peak TrasferRate from 700Mbps to 667Mbps. (page 1)


    OCR Scan     		PDF 16/18Mbit 700Mbps 667Mbps. SHP-32 RDRAM CONCURRENT samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H

    hyundai rdram

    Abstract: No abstract text available
    Text: T NU Direct RDRAM / SyncLink DRAM PART NUMBERING HY XX X XX XX X X X - XXX SPEED 50M 60M 66M 70M 80M 10G 12G 16G HYUNDAI Memory Products PRODUCT GROUP RD : Direct RDRAM SL : SyncLink DRAM PROCESS & POWER SUPPLY U : CMOS,2.5V PACKAGE H : SHP V : SVP M : |UBGA


    OCR Scan     		PDF 500MHz 600MHz 667MHz 700MHz 800MHz 18M-bit 64M-bit 72M-bit l44M-bit VSMP-400mil hyundai rdram

    samsung concurrent rdram

    Abstract: RDRAM CONCURRENT KM49RC2H-A60 samsung datecode rdram concurrent Samsung concurrent rdram concurrent RDRAM 72 RDRAM Clock concurrent rdram samsung
    Text: Preliminary KM48 9 RC2H Concurrent RDRAM Overview Ordering Information The 16 / 18Mbit Concurrent Rambus DRAMs (RDRAM ) are Part No. Org. frequency by 8 or 9 bits. They are capable of bursting unlimited lengths of KM49RC2H-A53 2M x 9 533Mhz data at 1.5ns per byte (12.0ns per eight bytes). The use of Ram­


    OCR Scan     		PDF 18Mbit 667MHz SHP-32 samsung concurrent rdram RDRAM CONCURRENT KM49RC2H-A60 samsung datecode rdram concurrent Samsung concurrent rdram concurrent RDRAM 72 RDRAM Clock concurrent rdram samsung

    HY5RC1809

    Abstract: concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53
    Text: HY5RC1809 / 6408 Series “HYUNDAI 18Mb 2Mx9 / 64Mb(8Mx8), Concurrent RDRAM Preliminary Overview The 18/64M b C o n cu rre n t R am bus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M words by 9 bits or 8M words by 8 bits. They are capable of bursting unlimited length of


    OCR Scan     		PDF 18/64M SVP-32 HY5RC1809 concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53

    Untitled

    Abstract: No abstract text available
    Text: CL-GD5465 Advance Product Bulletin uü! CIRRUS LOGIC FEA TU RES High-Performance 3D AGP Graphics Accelerator • 64-blt graphics engine with integrated 3D game acceleration — — — — — — — — — — — — — — — Perspective textures mapping


    OCR Scan     		PDF CL-GD5465 64-blt 16-bit

    CL-GD5465

    Abstract: colour tv kit circuit diagram apple powermac cirrus logic laguna Chinese tv circuit schematic diagram vga to tv CL-GD546X PC97 3D Accelerator rdram 667
    Text: CL-GD5465 Advance Product Bulletin ILI C IR R U S L O G IC FEATURES • 6 4 -b lt g ra p h ic s e n g in e w ith in te g ra te d a c c e le ra tio n — — — — — — — — — — — — — — — High-Performance 3D AGP Graphics Accelerator 3D g a m e


    OCR Scan     		PDF CL-GD5465 64-blt 16-bit blo768, CL-GD5465 colour tv kit circuit diagram apple powermac cirrus logic laguna Chinese tv circuit schematic diagram vga to tv CL-GD546X PC97 3D Accelerator rdram 667

    F501 MOS

    Abstract: voice recognition control home automation voice recognition processor voice recorder player ic 74H373 VOICE RECOGNITION ALGORITHM block diagram of speech recognition circuit diagram of speech recognition VOICE RECORDER circuits F300
    Text: Oki Semiconductor MSM6679A-110 VRP SI/SD Voice Recognizer, Recorder/Player, and Speech Synthesizer DESCRIPTION The MSM6679A-110 Voice Recognition Processor VRP is a slave-mode device that performs five func­ tions: speaker-independent (SI) voice recognition, speaker-dependent (SD) voice recognition, solid-state


    OCR Scan     		PDF MSM6679A-110VRP_ MSM6679A-110 MSM6679A MSM6654. F501 MOS voice recognition control home automation voice recognition processor voice recorder player ic 74H373 VOICE RECOGNITION ALGORITHM block diagram of speech recognition circuit diagram of speech recognition VOICE RECORDER circuits F300