RD00HVS1 Search Results

RD00HVS1 Price and Stock

Filter by Manufacturer


Mitsubishi Electric RD00HVS1-T113 POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	RD00HVS1-T113		2,160			1 $5.4 10 $5.4 100 $5.4 1000 $2.7 10000 $2.7	Buy Now

RD00HVS1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RD00HVS1		Mitsubishi	Silicon MOSFET Power Transistor 175 MHz, 0.5 W		Original	PDF
RD00HVS1		Mitsubishi	Silicon MOSFET Power Transistor 175MHz, 0.5W		Original	PDF
RD00HVS1		Mitsubishi	Transistor Mosfet N-CH 30V 0.2A 3SOT-89		Original	PDF

RD00HVS1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
gp 722 Abstract: 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-036-A Date : 11th Jul 2006 Rev. date : 22 th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani RD00HVS1 RF characteristics data at f=150-162MHz,Vdd=7.2V SUBJECT: SUMMARY: This application note shows the RF characteristics Frequency Characteristics and Pin vs. Pout	Original	AN-VHF-036-A RD00HVS1 150-162MHz RD00HVS1: 150MHz 156MHz 162MHz c72JB CR1/10-241JB gp 722 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E	PDF
Untitled Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz RD00HVS1-101	PDF
RD00HVS1 Abstract: transistor 5024 transistor D 5024 TRANSISTOR 7916 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz transistor 5024 transistor D 5024 TRANSISTOR 7916	PDF
transistor D 5024 Abstract: RD00HVS1 8582 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz transistor D 5024 8582	PDF
GRM1882C1H5R0CZ01D Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0 Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V	Original	AN-UHF-111 RD00HVS1 RD02MUS1B 400-470MHz, 470MHz. RD00HVS1: RD02MUS1B: 103AJ-G" 400MHz 470MHz, GRM1882C1H5R0CZ01D GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h GRM1882C1H150JA01D RPC05-0R0	PDF
RD00HVS1 Abstract: RF Transistor s-parameter vhf T113 RD00HVS1-101 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz RF Transistor s-parameter vhf T113 RD00HVS1-101	PDF
transistor D 5024 Abstract: 1383 transistor transistor d 1264 a 4134 mosfet 5024 transistor TRANSISTOR 7916 transistor 5024 RD00HVS1 TRANSISTOR 1383 transistor A 1264 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION 4.6MAX RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz 48MAX 53MAX transistor D 5024 1383 transistor transistor d 1264 a 4134 mosfet 5024 transistor TRANSISTOR 7916 transistor 5024 TRANSISTOR 1383 transistor A 1264	PDF
1383 transistor Abstract: TRansistor C 101 RD00HVS1-101 4134 mosfet RD00HVS1 TRANSISTOR 1383 T06M transistor D 5024 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz 1383 transistor TRansistor C 101 RD00HVS1-101 4134 mosfet TRANSISTOR 1383 T06M transistor D 5024	PDF
8582 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically 4.4+/-0.1 designed for VHF/UHF RF amplifiers applications. TYPE NAME	Original	RD00HVS1 175MHz RD00HVS1 175MHz RD00HVS1-101 Oct2011 8582	PDF
GRM2162C Abstract: GRM2162C1H100FD01E GRM2162C1H110GD01E GRM2162C1H150GD01E GRM2162C1H4R0CD01E GRM2162C1H5R0CD01E GRM2162C1H680GD01E GRM216R11H223KA01E RD00HVS1 30t60 Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-076-A Date : 29th Jun. 2006 Rev. Date :22th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V	Original	AN-UHF-076-A RD00HVS1 450-470MHz RD00HVS1: 450MHz 460MHz 470MHz C1H100FD01E GRM2162C1H680GD01E GRM2162C GRM2162C1H100FD01E GRM2162C1H110GD01E GRM2162C1H150GD01E GRM2162C1H4R0CD01E GRM2162C1H5R0CD01E GRM2162C1H680GD01E GRM216R11H223KA01E 30t60	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically 4.4+/-0.1 designed for VHF/UHF RF amplifiers applications. TYPE NAME	Original	RD00HVS1 175MHz RD00HVS1 175MHz RD00HVS1-101	PDF
RD100HHF1 Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V	Original	30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1	PDF
RM15TB-H Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;	Original	CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A	PDF
j 6815 transistor Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .	OCR Scan	RD00HVS1 175MHz RD00HVS1 175MHz 48MAX OT-89 j 6815 transistor TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor	PDF