dc dc for CDI Circuit
Abstract: thyristor cdi FD1500BV-90DA cdi unit gct thyristor
Text: MITSUBISHI SOFT RECOVERY DIODES FD1500BV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD1500BV-90DA 6.35 x 10.8 φ85 ± 0.2 TYPE NAME 26 ± 0.5 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN ¡IF AV Average forward current . 1500A
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FD1500BV-90DA
120MAX
dc dc for CDI Circuit
thyristor cdi
FD1500BV-90DA
cdi unit
gct thyristor
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thyristor cdi
Abstract: gct thyristor dc dc for CDI Circuit FD1500BV-90DA
Text: MITSUBISHI SOFT RECOVERY DIODES FD1500BV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD1500BV-90DA 6.35 x 10.8 φ85 ± 0.2 TYPE NAME 26 ± 0.5 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN ¡IF AV Average forward current . 1500A
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FD1500BV-90DA
120MAX
thyristor cdi
gct thyristor
dc dc for CDI Circuit
FD1500BV-90DA
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gct thyristor
Abstract: FD500JV-90DA thyristor cdi 2000A power diode 2000A power diode qrr
Text: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A
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FD500JV-90DA
75MAX
gct thyristor
FD500JV-90DA
thyristor cdi
2000A power diode
2000A power diode qrr
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FAH 23. smd
Abstract: Ericsson GM 12 "Power over Ethernet" BMR456 BMR4562100/002
Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S Kevin Zhou Approved 1 (2) (5) No. Checked 1/1301- BMR 456Technical 00152-FGC1011823 Uen Specification Date BMR456 series SEC/S Kevin Zhou Fully regulated Advanced Bus Converters
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BMR456
00152-FGC1011823
1/28701-FGC
27-141W
FAH 23. smd
Ericsson GM 12
"Power over Ethernet"
BMR4562100/002
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gct thyristor
Abstract: FD500JV-90DA 2000A power diode qrr 530G thyristor cdi 2000A power diode
Text: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A
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FD500JV-90DA
75MAX
gct thyristor
FD500JV-90DA
2000A power diode qrr
530G
thyristor cdi
2000A power diode
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P0114
Abstract: BMR456
Text: Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other No. SEC/S Kevin Zhou Approved Checked 1 (2) (5) 1/1301- BMR 456Technical 00152-FGC1011823 Uen Specification Date BMR456 series SEC/S Kevin Zhou Fully regulated Advanced Bus Converters
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00152-FGC1011823
BMR456
27-141W
P0114
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NAC-20-472
Abstract: ADA600F-24 ADA600F-48 SPHD-002T-P05 ada1000f-24 ADA600F-30 ADA600F-36 DC90 ADA750F 250V25A
Text: Ordering information Unit type ADA600F 2 F 3 -24 4 Recommended Noise Filter NAC-20-472 R ADA ADA 600 1 High voltage pulse noise type : NAP series Low leakage current type : NAM series *The Noise Filter is recommended *to connect with several devices. -O 5
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ADA600F
NAC-20-472
SPHD-002T-P0
PHDR-14VS
BPHD-001T-P0
BPHD-002T-P0
S14B-PHDSS
NAC-20-472
ADA600F-24
ADA600F-48
SPHD-002T-P05
ada1000f-24
ADA600F-30
ADA600F-36
DC90
ADA750F
250V25A
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linflex
Abstract: DSI RGB Bridge display PDI 40 PK413 pj 88 LV smd code pj4 2PCS02 MPC5606 PCR111 SMD Transistor PD8
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: MPC5606S Rev. 7, 03/2011 MPC5606S MPC5606S Microcontroller Data Sheet MAPBGA–225 15 mm x 15 mm QFN12 ##_mm_x_##mm SOT-343R ##_mm_x_##mm PKG-TBD ## mm x ## mm LQFP144 20 x 20 mm 1 Overview
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MPC5606S
MPC5606S
QFN12
OT-343R
LQFP144
LQFP176
linflex
DSI RGB Bridge display
PDI 40
PK413
pj 88 LV
smd code pj4
2PCS02
MPC5606
PCR111
SMD Transistor PD8
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Untitled
Abstract: No abstract text available
Text: Ordering information AC-DC Power Supplies Enclosed type ADA600F ADA 600 1 2 F 3 -24 4 Recommended EMI/EMC Filter NAC-20-472 R ADA High voltage pulse noise type : NAP series Low leakage current type : NAM series *The EMI/EMC Filter is recommended *to connect with several devices.
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ADA600F
NAC-20-472
SPHD-002T-P0
PHDR-14VS
BPHD-001T-P0
BPHD-002T-P0
S14B-PHDSS
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ST7FLiteUS5
Abstract: HE10 AN1324
Text: ST7LITEUSx 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, TIMERS PRELIMINARY DATA • ■ ■ ■ ■ Memories – 1K bytes single voltage Flash Program memory with read-out protection, In-Circuit and InApplication Programming ICP and IAP . 10K write/erase cycles guaranteed, data retention:
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Untitled
Abstract: No abstract text available
Text: G200 www.vishay.com Vishay Draloric Axial Vitreous Wirewound Resistors FEATURES • Complete welded construction • Vitreous coating • Enhanced humidity protection • TCR 100 ppm/K to 180 ppm/K • CECC 40201-801 approved version available • Pure tin plating provides compatibility with lead Pb -free
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G220414
G240719
G260933
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: G200 www.vishay.com Vishay Draloric Axial Vitreous Wirewound Resistors FEATURES • Complete welded construction • Vitreous coating • Enhanced humidity protection • TCR 100 ppm/K to 180 ppm/K • CECC 40201-801 approved version available • Pure tin plating provides compatibility with lead Pb -free
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G220414
G240719
G260933
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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STM8S208
Abstract: RM0016 STM8S 5401 DM pm0044 sda 5241 STM8 CPU programming manual LQFP32 LQFP44 LQFP48
Text: STM8S207xx STM8S208xx Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN Features • ■ ■ ■ ■ Core – Max fCPU: Up to 24 MHz, 0 wait states @ fCPU ≤ 16 MHz – Advanced STM8 core with Harvard
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STM8S207xx
STM8S208xx
10-bit
STM8S208
RM0016
STM8S
5401 DM
pm0044
sda 5241
STM8 CPU programming manual
LQFP32
LQFP44
LQFP48
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Untitled
Abstract: No abstract text available
Text: D.-CRCW Vishay Thick Film, Rectangular Chip Resistors FEATURES • • • • Metal glaze on high quality ceramic Protective overglaze Lead bearing 90 % Sn/10 % Pb solder contacts Excellent stability (ΔR/R ≤ ± 0.5 % for 1000 h at 70 °C) in different environmental conditions
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Sn/10
40401-802/EIA-575
CRCW0402
08-Apr-05
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schlumberger 4002
Abstract: 2N6768 E7A2 2N6767 MFL 23-6
Text: FAIRCHILD SEMICONDUCTOR fi4 D e J 34L,Tb74 0027fl20 4 jf 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 78 20 D „ 2N6767/2N6768 N-Channel Power M O SFETs, 15 A, 350 V/400 V m hm hm bm A Schlum berger Com pany Power And Discrete Division T-39-13 Description These devices are n-channel, enhancement mode, power
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2N6767/2N6768
T-39-13
T0-204AA
2N6767
2N6768
2N6768
E7A24
schlumberger 4002
E7A2
MFL 23-6
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tic 1060
Abstract: No abstract text available
Text: Panasonic Aluminum Electrolytic Capacitors/EB Aluminum Electrolytic Capacitors Radial Lead Type M in ia tu riz a tb n ForE ictonfc Ba]fest (Hgh Volage) C ic u it fcr contro] (Low V olage) F e a tm ss Life tm e : 105 CC 5000 - lOOOOh JncJude Low Profite p ro d u c ts
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5000h
tic 1060
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM514266B_ 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514266B is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514266B is OKI's CMOS silicon gate process technology.
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MSM514266B_
144-WORD
MSM514266B
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Z80B-CPU
Abstract: Z8400BPS Z8400APS Z80BCPU Z8400A-PS Z8400A Z80h Z80B CPU z80a-cpu TDA 4100
Text: 28400 Z80*CPU C entral Processing Unit P roduct S pecification Septem ber 1983 F e a tu re s • The instruction set contains 158 instructions. The 78 instructions of the 8080A are included as a subset; 8080A software com patibility is m aintained. ■ Eight MHz, 6 MHz, 4 MHz an d 2.5 MHz
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Z8400A
Z8400
Z8400B
40-pin)
Z80B-CPU
Z8400BPS
Z8400APS
Z80BCPU
Z8400A-PS
Z80h
Z80B CPU
z80a-cpu
TDA 4100
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EE119
Abstract: No abstract text available
Text: Panasonic y ' j y s f B t 'W 7 JU 5 9 - & ñ íL B j’ i i s / iS . ^ 3 l» V x V t t Alum inium Electrolytic Capacitors/NXA Aluminium Electrolytic Capacitors Type Snap-in Series NXA k n v x v y - Japan U .S.A. NXA Type TS (Snap-in) Series: on Long life
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30x45
30x50
35x40
EE119
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ding dong generator
Abstract: ding dong brahms lullaby happy birthday happy birthday to you trio melody ding dong santa claus is coming to town SD995 TR11
Text: Z J Super Device SD995 SD995 Dual Tone Melody Generator Features 1.3V to 3.3V power supply. Lower power consumption. 256 notes memory. 14 tempos available. 15 beats available. 27 notes including rest available. RC oscillator with one external resistor. On chip envelope modulation.
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SD995
SD995
995-C
ding dong generator
ding dong
brahms lullaby
happy birthday
happy birthday to you
trio
melody ding dong
santa claus is coming to town
TR11
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5D215
Abstract: 5D104
Text: VITESSE V 5 C 7 1 0 7 High Performance Encoder/Decoder Preliminary Data Sheet FEATURES • Full A N S I X3T11 Fibre Channel FC Compatibility • 8B/10B Encoding/Decoding • 32 or 16 bit Synchronous FIFO System Interface • 20 bit Encoded Transmission Character
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X3T11
8B/10B
VSC7107
0DD13D1
VSC7107
VSC71XX
----------------------VSC7107
S502331
5D215
5D104
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3N120E
Abstract: B3N120E MTB3N120E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M TB3N 120E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M o to ro la P re fe rre d D evice TM O S PO W ER FET N-Channel Enhancement-Mode Silicon Gate
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Untitled
Abstract: No abstract text available
Text: E2E0042-18-95 O K I Semiconductor MSM63184B 4-Bit Microcontroller with Built-in 640-Dot Matrix LCD Drivers, Operating at 0.9 V Min. GENERAL DESCRIPTION The MSM63184B is a CMOS 4-bit microcontroller with built-in 640-dot matrix LCD drivers and operates at 0.9 V (min.). The MSM63184B is suitable for applications such as games, toys,
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E2E0042-18-95
MSM63184B
640-Dot
MSM63184B
6318x
OLMS-63K
MSM63P180
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IS626030
Abstract: 0A48 JS 9 diode
Text: 3 =iE POUlEREX INC » • TSTMbSl r<¥/ER£X D 0 0 M7 3 7 4 H P R X IS 626030 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S. A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 " T ' V ? ' 3/ Single IGBTMOD
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D00M737
IS626030
BP107,
300Amperes/600
IS626030
1S697
300Amperes/600Volts
0A48
JS 9 diode
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