600D
Abstract: 601D 602D 604D RBV600D RBV610D
Text: RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC
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RBV600D
RBV610D
RBV25
UL94V-O
MIL-STD-202,
Polari50
600D
601D
602D
604D
RBV610D
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604D
Abstract: 602D 600D 601D RBV600D RBV610D
Text: RBV600D - RBV610D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 ~ ~ 1.0 ± 0.1 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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RBV600D
RBV610D
RBV25
UL94V-O
MIL-STD-202,
604D
602D
600D
601D
RBV610D
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RBV600 - RBV610 SILICON BRIDGE RECTIFIERS
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RBV600
RBV610
RBV25
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Untitled
Abstract: No abstract text available
Text: RBV6005-RBV610 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 6.0 A KBJ Features 4.7± 0.25 ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded 30± 0.3 Surge overload rating: 200 amperes peak 11.1± 0.2
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RBV6005-RBV610
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604D
Abstract: 600D 601D 602D RBV600D RBV610D
Text: RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes RBV25 3.9 ± 0.2 30 ± 0.3 C3 FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC
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RBV600D
RBV610D
RBV25
UL94V-O
MIL-STD-202,
604D
600D
601D
602D
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RBV6
Abstract: RBV-602 BRIDGE DIODE RBV-602 RBV600 RBV610
Text: RBV600 - RBV610 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ + 1.0 ± 0.1 17.5 ± 0.5 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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RBV600
RBV610
RBV25
UL94V-O
MIL-STD-202,
Polarity50
RBV6
RBV-602 BRIDGE DIODE
RBV-602
RBV610
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RBV-602 BRIDGE DIODE
Abstract: RBV-606 BRIDGE DIODE rbv-602 RBV600 RBV610
Text: RBV600 - RBV610 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 ~ ~ + 1.0 ± 0.1 17.5 ± 0.5 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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RBV600
RBV610
RBV25
UL94V-O
MIL-STD-202,
RBV-602 BRIDGE DIODE
RBV-606 BRIDGE DIODE
rbv-602
RBV610
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 RBV600D - RBV610D IATF 0113686 SGS TH07/1033 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 + ~~ 1.0 ± 0.1 10 7.5 7.5 ± 0.2 ±0.2 ±0.2 MECHANICAL DATA : * Case : Reliable low cost construction
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TH09/2479
TH97/2478
RBV600D
RBV610D
TH07/1033
RBV25
UL94V-0
MIL-STD-202,
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RBV-602 BRIDGE DIODE
Abstract: rbv 602 RBV600 RBV610
Text: RBV600 - RBV610 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ 1.0 ± 0.1 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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RBV600
RBV610
RBV25
UL94V-O
MIL-STD-202,
RBV-602 BRIDGE DIODE
rbv 602
RBV610
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RBV-602
Abstract: RBV6005 RBV610
Text: BL GALAXY ELECTRICAL RBV6005 - - - RBV610 VOLTAGE RANGE: 50 - 1000 V CURRENT: 6.0 A SILICON BRIDGE RECTIFIERS FEATURES KBJ6 ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique ◇ Surge overload rating: 200 amperes peak
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RBV6005
RBV610
RBV-602
RBV610
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RBV600D - RBV610D SILICON BRIDGE RECTIFIERS
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RBV600D
RBV610D
RBV25
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CL-200 IR
Abstract: 604D JEC 400 600D 601D 602D RBV600D RBV610D
Text: 5YNSEMI SEMICONDUCTOR RBV600D - RBV610D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts lo : 6.0 Amperes 3. 9 ± 0. 2C3 30 ±0.3 4.9 ± 0. 2 - FEATURES: * * * * * * * * 0 3. 2 ± 0.1 High current capability High surge current capability High reliability
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RBV600D
RBV610D
UL94V-0
MIL-STD-202,
CL-200 IR
604D
JEC 400
600D
601D
602D
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RBV-602 BRIDGE DIODE
Abstract: RBV-606 BRIDGE DIODE RBV600 RBV610 cco200 NMH 80
Text: r SvrnSEM i m " in c SYMSEMI SEMICONDUCTOR RBV600 - RBV610 SILICON BRIDGE RECTIFIERS PRV: 50 - 1000 Volts lo : 6.0 Amperes FEATURES: * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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RBV600
RBV610
UL94V-0
MIL-STD-202,
RBV-602 BRIDGE DIODE
RBV-606 BRIDGE DIODE
cco200
NMH 80
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