Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-454BA72 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M SDRAM: mPD4516421 are assembled.
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MC-454BA72
72-BIT
MC-454BA72
mPD4516421
MC-454BA72-A10
MC-454BA72-A12
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db3 bl
Abstract: dba1 MAKING A10 BGA QFP100-P-1420-0 MS82V16520
Text: E2L1056-39-72 ¡ Semiconductor MS82V16520 ¡ Semiconductor This version: Jul. 1999 MS82V16520 Previous version: Sep. 1998 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32
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E2L1056-39-72
MS82V16520
144-Word
32-Bit
MS82V16520
db3 bl
dba1
MAKING A10 BGA
QFP100-P-1420-0
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BL-4C
Abstract: actb 10-VCC-0 QFP100-P-1420-0 Cas23
Text: J2L1056-39-72 作成：1999年 7月 MS82V16520 l 前回作成：1998年 9月 ¡ 電子デバイス MS82V16520 262,144-Wordx32-Bit×2-Bank SYNCHRONOUS GRAPHICS RAM n 概要 MS82V16520は256Kワード×32ビット×2バンクのシンクロナスグラフィックスRAMです。
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J2L10563972
MS82V16520
MS82V16520
144Word
32Bit
MS82V16520256K
143MHz8
CAS23
2A10BA
04832ms
BL-4C
actb
10-VCC-0
QFP100-P-1420-0
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rba 016
Abstract: dba1 VG3617161BT
Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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VG3617161BT
VG3617161BT
288-word
16-bit
50-pin
200MHz,
183MHz,
166MHz,
143MHz,
125MHz
rba 016
dba1
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tas t23
Abstract: No abstract text available
Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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VG3617161BT
288-word
16-bit
50-pin
166MHz,
143MHz,
125MHz,
100MHz
Ia0344
tas t23
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PD48
Abstract: uPD481850GF-A12-JBT
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 128 K words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write
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PD481850
PD481850
100-pin
PD48
uPD481850GF-A12-JBT
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dba1
Abstract: VG3617161DT
Text: VIS VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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VG3617161DT
VG3617161DT
288-word
16-bit
50-pin
250MHz,
200MHz,
183MHz,
166MHz,
143MHz,
dba1
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BA1T12
Abstract: BA1T11 BA2T13 ba6t17 PD4516161G5 A10 7JF PD4516821G5 PD4516161 1994P PD4516421G5
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.
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PD4516421,
16M-bit
216-bit
44-pin
50-pin
BA1T12
BA1T11
BA2T13
ba6t17
PD4516161G5
A10 7JF
PD4516821G5
PD4516161
1994P
PD4516421G5
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MS82V16520
Abstract: QFP100-P-1420-0
Text: FEDS82V16520-05 ¡ Semiconductor MS82V16520 This version: Mar. 2001 Previous version: Feb. 2000 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32
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FEDS82V16520-05
MS82V16520
144-Word
32-Bit
MS82V16520
QFP100-P-1420-0
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dba1
Abstract: MSM54V25632A MSM54V25632A-10 MSM54V25632A-12 QFP100-P-1420-0
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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dba1
Abstract: VG3617161DT
Text: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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VG3617161DT
VG3617161DT
288-word
16-bit
50-pin
250MHz,
200MHz,
183MHz,
166MHz,
143MHz,
dba1
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Untitled
Abstract: No abstract text available
Text: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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PDF
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VG3617161BT
288-word
16-bit
50-pin
166MHz,
143MHz,
125MHz,
100MHz
Ia0344
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dba1
Abstract: VG3617161ET
Text: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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VG3617161ET
VG3617161ET
288-word
16-bit
50-pin
166MHz,
143MHz,
125MHz
1G5-0189
dba1
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dba1
Abstract: VG3617161ET RR111
Text: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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VG3617161ET
VG3617161ET
288-word
16-bit
50-pin
166MHz,
143MHz,
125MHz
1G5-0189
dba1
RR111
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dba1
Abstract: No abstract text available
Text: VIS Preliminary VG3617161DT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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VG3617161DT
VG3617161DT
288-word
16-bit
50-pin
180MHz,
166MHz,
143MHz,
125MHz,
100MHz
dba1
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Untitled
Abstract: No abstract text available
Text: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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Original
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PDF
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VG3617161DT
288-word
16-bit
50-pin
250MHz,
200MHz,
183MHz,
166MHz,
143MHz,
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Untitled
Abstract: No abstract text available
Text: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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Original
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PDF
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VG3617161DT
288-word
16-bit
50-pin
250MHz,
200MHz,
183MHz,
166MHz,
143MHz,
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dba1
Abstract: MS82V16520 QFP100-P-1420-0
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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dba1
Abstract: MS82V16520 QFP100-P-1420-0 CBB, CBC
Text: Pr E2L0056-18-32 el im y 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32 bits ¥ 2 banks. This device can operate up to 125 MHz by using synchronous interface. In addition, it has 8-column
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E2L0056-18-32
144-Word
32-Bit
MS82V16520
MS82V16520
QFP100-P-1420-0
65-BK4
dba1
CBB, CBC
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M5562
Abstract: RBA 5C BC 529 GOK584450 gk 27b 5A64
Text: 53@, .?>:8:>6@2 <27.B 3GDQROGP y Cnj[dZ[Z j[cf2 hWd][ kf je 569 y 5 Dehc ? - 5 Dehc A YedjWYj WhhWd][c[dj y 62<cc MA j[hc_dWbi y NeFO - CHR Yecfb_Wdj >TNIEDJ .NNJIEDQIMLP F[WZb_]^j Yedjheb0 Dk[b fkcf Yedjheb0 Fehd Yedjheb0 ?3A Yecfh[iieh YbkjY^ 05.<.0>2<6=>60=
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694cR
5729RBA/
M5562
RBA 5C
BC 529
GOK584450
gk 27b
5A64
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Untitled
Abstract: No abstract text available
Text: Pr E2L0056-28-91 el im y 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32 bits ¥ 2 banks. This device can operate up to 166 MHz by using synchronous interface. In addition, it has 8-column
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E2L0056-28-91
MS82V16520
144-Word
32-Bit
MS82V16520
QFP100-P-1420-0
65-BK4
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uPD4504161
Abstract: upd4504161g5
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized as 131,072 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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PD4504161
PD4504161
304-bit
50-pin
uPD4504161
upd4504161g5
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UPD4504161
Abstract: PD4504161 upd4504161g5
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized as 131,072 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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PD4504161
PD4504161
304-bit
50-pin
UPD4504161
upd4504161g5
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Untitled
Abstract: No abstract text available
Text: 30E D m 7^5^537 003113? 2 m SGS-THOMSON 0 g[H }(gm iO T (Q K S S G 2 N 2857 S-THOMSON VHF/UHF AMPLIFIERS DESCRIPTION The 2N2857 is a silicon planar epitaxial NPN tran sistors in Jedec TO-72 metal case, intended for am plifier, oscillator and converter applications up to
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2N2857
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