Untitled
Abstract: No abstract text available
Text: RB717F Diodes Schottky barrier diode RB717F zApplications General purpose detection High speed switching zExternal dimensions Units : mm 2.0±0.2 0.9±0.1 1.3±0.1 2.1±0.1 0.65 0~0.1 0.15±0.05 3E 0.3±0.1 (All leads have the same dimensions) zConstruction
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RB717F
SC-70
OT-323
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RB717F
Abstract: No abstract text available
Text: REFERENCE 30-Oct-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB717F No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI
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30-Oct-06
RB717F
113E-08
102E-12
000E-07
214E-09
RB717F
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RB717F
Abstract: Schottky Diode rb717f schottky barrier diode
Text: Diodes Schottky barrier diode RB717F FApplications General purpose detection High speed switching FExternal dimensions Units: mm Schottky barrier diodes FFeatures 1) Multiple diodes with common anode configuration. (UMD3) 2) High reliability. 3) Low reverse current and low forward voltage.
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RB717F
RB717F
Schottky Diode
rb717f schottky barrier diode
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode RB717F ＳＯＴ－３２３ SCHOTTKY BARRIER DIODE FEATURES: １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃）
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OT-323
RB717F
525REF
026TYP
650TYP
021REF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode RB717F SOT-323 SCHOTTKY BARRIER DIODE FEATURES: 1. 01 REF 1. 25¡ À0. 05 Power dissipation mW Tamb=25℃ 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 30 mA IF: Collector-base voltage
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OT-323
RB717F
OT-323
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SOT-323 package outline
Abstract: Plastic-Encapsulate Diodes marking E1 RB717F MARKING 3E Diodes a2 0016C
Text: SOT-323 Plastic-Encapsulate Diodes RB717F ＳＯＴ－３２３ SCHOTTKY BARRIER DIODE FEATURES: １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃） Collector current IF : 30 mA Collector-base voltage
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OT-323
RB717F
525REF
026TYP
650TYP
021REF
SOT-323 package outline
Plastic-Encapsulate Diodes
marking E1
RB717F
MARKING 3E
Diodes a2
0016C
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Untitled
Abstract: No abstract text available
Text: RB717FFH Diodes AEC-Q101 Qualified Schottky barrier diode RB717FFH zApplications Low current rectification z External dimensions Unit : mm z Land size figure (Unit : mm) 㪈㪅㪊 r 㪇㪅㪍㪌 r 㪇㪅㪐㪤㪠㪥㪅 ฦ࠼ߣ߽ Each
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RB717FFH
AEC-Q101
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RB717F
Abstract: No abstract text available
Text: RB717F Diodes Schottky barrier diode RB717F zApplications Low current rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 2.0±0.1 1.3 ＋0.1 0.25 －0.05 各リードとも Each lead has same dimension 同寸法 ＋0.1 0.15 －0.06
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RB717F
OT-323
SC-70
RB717F
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rb717f schottky barrier diode
Abstract: RB717F
Text: RB717F Diodes Schottky barrier diode RB717F zApplications General purpose detection High speed switching zExternal dimensions Units : mm 2.0±0.2 0.9±0.1 1.3±0.1 2.1±0.1 0.65 0~0.1 0.15±0.05 3E 0.3±0.1 (All leads have the same dimensions) zConstruction
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RB717F
SC-70
OT-323
rb717f schottky barrier diode
RB717F
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MARKING 3E
Abstract: RB717F
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode RB717F SOT-323 SCHOTTKY BARRIER DIODE FEATURES: Low VF, Low VR High reliability MARKING: 3E• Maximum Ratings @TA=25 ℃ Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage
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OT-323
RB717F
OT-323
MARKING 3E
RB717F
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RB717F
Abstract: No abstract text available
Text: RB717F SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.03 Ampere FEATURES SOT-323 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-323 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA
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RB717F
OT-323
OT-323
J-STD-020D
2002/95/EC
RB717F
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Untitled
Abstract: No abstract text available
Text: Product specification RB717F Features Small mold type. UMD3 High reliability. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Lim its Unit V RM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current * IO 30 mA I FSM 200 mA Reverse voltage (repetitive peak)
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RB717F
1MH25
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RB717F
Abstract: No abstract text available
Text: RB717F Diodes Schottky barrier diode RB717F zApplications Low current rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 㪈㪅㪊 r 㪇㪅㪍㪌 r 㪇㪅㪐㪤㪠㪥㪅 ฦ࠼ߣ߽ Each lead has same dimension
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RB717F
RB717F
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Untitled
Abstract: No abstract text available
Text: MMBD717 Schottky Barrier Diode SOT-323 Features High reliability type. Low VF. High reliability. Applications Low current rectification. Dimensions in inches and millimeters Ordering Information Type No. Marking Package Code RB717F 3E SOT-323
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MMBD717
OT-323
RB717F
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RB717F
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# RB717F Features • • • • • Halogen free available upon request by adding suffix "-HF" High reliability
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RB717F
OT-323
RB717F
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Untitled
Abstract: No abstract text available
Text: RB717F Diodes Schottky barrier diode RB717F Applications Low current rectification Land size figure Unit : mm External dimensions (Unit : mm) 緱綌縈 3/1‒1/3 緫綌縠縕 1/26‒1/16 緫綌繮耑翮耔綌 返鷺察彩膏豪 Each lead has same dimension
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RB717F
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RB717F
Abstract: No abstract text available
Text: RB717F Diodes Schottky barrier diode RB717F zApplications Low current rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 1.3 2.0±0.2 0.65 0.15±0.05 0.9MIN. 各リードとも Each lead has same dimension 同寸法 2.1±0.1 1.25±0.1
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RB717F
OT-323
SC-70
RB717F
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PBD 3511
Abstract: No abstract text available
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-323 Package Weight mg 6 Product Group Type No. MMBD352W RB706F-40, RB715F, RB717F BAS70W / AW / CW / SW 1SS372 MMBD717W / AW / CW / SW BAT54W / AW / CW / SW MMBD330 BAS40W / AW / CW / SW
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OT-323
MMBD352W
RB706F-40,
RB715F,
RB717F
BAS70W
1SS372
MMBD717W
BAT54W
MMBD330
PBD 3511
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RB717F
Abstract: No abstract text available
Text: RB715F / RB717F SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protecion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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RB715F
RB717F
OT-323,
MIL-STD-202,
RB717F
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TPC28T
Abstract: MAX1987ETM tpc8107 C2682 CM85621 2SC252 asus 2mm t140 12C519 2mm t120
Text: 5 4 3 2 1 AC_BAT_SYS 1 2 1 C404 15UF/25V D 5 6 7 8 Q69 SI4800BDY GND T215 TPC28t 4 3 2 1 3 2 +1.8VAUXO 1 2 3 4 T131 TPC28t T17 T27 T133 1 1 C401 0.1UF/25V D34 RB717F 2 G S +5VA S C405 0.1UF/25V G GND + D D Q70 SI4800BDY 1 8 7 6 5 D 2 2 + CE12 220uF/25V 1 2
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15UF/25V
220uF/25V
TPC28t
15UF/25V
1UF/25V
SI4800BDY
RB717F
MAX1987ETM
tpc8107
C2682
CM85621
2SC252
asus
2mm t140
12C519
2mm t120
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rb717f schottky barrier diode
Abstract: RB717F
Text: RB717F RB717F ＳＯＴ－３２３ SCHOTTKY BARRIER DIODE FEATURES: １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃） Collector current IF : 30 mA Collector-base voltage VR : 40 V Operating and storage junction temperature range
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RB717F
026TYP
650TYP
525REF
021REF
rb717f schottky barrier diode
RB717F
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Untitled
Abstract: No abstract text available
Text: RB717F K/Diodes R B 717F H lf ê 4 l/ Under Development v 'j3 > it:$ iv 7 ^ v a 'y K Silicon Epitaxial Schottky Barrier Diode • • W f é ^ iH / 'D im e n s io n s (U nit : mm ) 1) 7 y - h ' 3 i > ’X > ÿ - i 7 ' o 2) 5 Ko 3) isiiaflÆT fe -5 o • Features
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RB717F
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Untitled
Abstract: No abstract text available
Text: RB717F K /D io d e s R B 717F Silicon Epitaxial Schottky Barrier Diodes • 4 • « * 1 / J v M a i i g * - f 7 T ' & 5 4 - / Di mensi ons Unit : mm) (U M D )o 2) ra ig flT 'ife -5 0 • Features 1) Small surface m ount typ e (UMD). 2) High relia bility.
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RB717F
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Untitled
Abstract: No abstract text available
Text: Diode, Schottky barrier, surface mount RB717F These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Each envelope contains two diodes with a common anode. Dimensions Units : mm 1 3±0 1 i 0r— 65 0 65 Features
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RB717F
SC-70,
OT-323)
RB717F
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