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    MMBD352W Search Results

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    MMBD352W Price and Stock

    onsemi MMBD352WT1G

    RF DIODE SCHOTTKY 7V 200MW SC70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD352WT1G Cut Tape 81,160 1
    • 1 $0.33
    • 10 $0.193
    • 100 $0.1169
    • 1000 $0.07437
    • 10000 $0.07437
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    MMBD352WT1G Digi-Reel 81,160 1
    • 1 $0.33
    • 10 $0.193
    • 100 $0.1169
    • 1000 $0.07437
    • 10000 $0.07437
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    MMBD352WT1G Reel 78,000 3,000
    • 1 -
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    • 100 -
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    • 10000 $0.06136
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    Avnet Americas MMBD352WT1G Reel 10 Weeks 18,000
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    Mouser Electronics MMBD352WT1G 6,739
    • 1 $0.25
    • 10 $0.153
    • 100 $0.084
    • 1000 $0.071
    • 10000 $0.045
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    Newark MMBD352WT1G Cut Tape 19,250 5
    • 1 $0.277
    • 10 $0.162
    • 100 $0.094
    • 1000 $0.081
    • 10000 $0.081
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    MMBD352WT1G Reel 6,000
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    • 10000 $0.061
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    Onlinecomponents.com MMBD352WT1G
    • 1 -
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    • 10000 $0.0382
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    Bristol Electronics MMBD352WT1G 660 27
    • 1 -
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    • 100 $0.0938
    • 1000 $0.0562
    • 10000 $0.0562
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    Quest Components MMBD352WT1G 557
    • 1 $0.11
    • 10 $0.11
    • 100 $0.0825
    • 1000 $0.0688
    • 10000 $0.0688
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    MMBD352WT1G 528
    • 1 $0.25
    • 10 $0.25
    • 100 $0.075
    • 1000 $0.075
    • 10000 $0.075
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    Avnet Silica MMBD352WT1G 11 Weeks 3,000
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    EBV Elektronik MMBD352WT1G 12 Weeks 3,000
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    onsemi NSVMMBD352WT1G

    DIODE ARRAY SCHOTTKY 7V SOT323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NSVMMBD352WT1G Digi-Reel 2,730 1
    • 1 $0.53
    • 10 $0.314
    • 100 $0.1936
    • 1000 $0.12657
    • 10000 $0.12657
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    NSVMMBD352WT1G Cut Tape 2,730 1
    • 1 $0.53
    • 10 $0.314
    • 100 $0.1936
    • 1000 $0.12657
    • 10000 $0.12657
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    NSVMMBD352WT1G Reel 3,000
    • 1 -
    • 10 -
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    • 10000 $0.10606
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    Avnet Americas NSVMMBD352WT1G Reel 8 Weeks 9,000
    • 1 -
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    • 1000 -
    • 10000 $0.07231
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    Mouser Electronics NSVMMBD352WT1G 2,393
    • 1 $0.47
    • 10 $0.247
    • 100 $0.142
    • 1000 $0.126
    • 10000 $0.088
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    Newark NSVMMBD352WT1G Reel 3,000
    • 1 -
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    • 10000 $0.098
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    Avnet Silica NSVMMBD352WT1G 9 Weeks 3,000
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    EBV Elektronik NSVMMBD352WT1G 10 Weeks 3,000
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    onsemi MMBD352WT1

    DIODE SCHOTTKY DUAL 7V SOT-323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD352WT1 Reel
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    Quest Components MMBD352WT1 1,760
    • 1 $0.3
    • 10 $0.3
    • 100 $0.135
    • 1000 $0.09
    • 10000 $0.09
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    Rochester Electronics MMBD352WT1 1,998 1
    • 1 $0.09
    • 10 $0.09
    • 100 $0.0846
    • 1000 $0.0765
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    MMBD352W Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBD352W On Semiconductor Dual Schottky Barrier Diode Original PDF
    MMBD352W PanJit Semiconductors SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE Original PDF
    MMBD352WT1 Leshan Radio Company Dual Schottky Barrier Diode Original PDF
    MMBD352WT1 Motorola Silicon Diode Original PDF
    MMBD352WT1 On Semiconductor MMBD352 - DIODE SILICON, UHF BAND, MIXER DIODE, CASE 419-04, SC-70, 3 PIN, Microwave Mixer Diode Original PDF
    MMBD352WT1 On Semiconductor Dual Schottky Barrier Diode Original PDF
    MMBD352WT1 On Semiconductor Dual Schottky Barrier Diode Original PDF
    MMBD352WT1-D On Semiconductor Dual Schottky Barrier Diode Original PDF
    MMBD352WT1G On Semiconductor MMBD352 - DIODE SILICON, UHF BAND, MIXER DIODE, LEAD FREE, CASE 419-04, SC-70, 3 PIN, Microwave Mixer Diode Original PDF
    MMBD352WT1G On Semiconductor Small Signal SC70 Schottky, Dual Series Original PDF

    MMBD352W Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed


    Original
    MMBD101W/MMBD352W/MMBD354W/MMBD355W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2012-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed


    Original
    MMBD101W/MMBD352W/MMBD354W/MMBD355W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2012-REV RB500V-40 MMBD101W PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Schottky Barrier Diode MMBD352WT1 3 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 MMBD352WT1 PDF

    MMBD352WT1

    Abstract: SMD310
    Text: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 r14525 MMBD352WT1/D MMBD352WT1 SMD310 PDF

    MMBD352WT1

    Abstract: No abstract text available
    Text: ON Semiconductort Dual SCHOTTKY Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 r14525 MMBD352WT1/D MMBD352WT1 PDF

    MMBD352WT1G

    Abstract: No abstract text available
    Text: MMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. Features http://onsemi.com • Very Low Capacitance - Less Than 1.0 pF @ 0 V


    Original
    MMBD352WT1G OT-323 SC-70) MMBD352WT1/D MMBD352WT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 MMBD352WT1/D PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 MMBD352WT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD352WT1G, MMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. http://onsemi.com Features •     Very Low Capacitance − Less Than 1.0 pF @ 0 V


    Original
    MMBD352WT1G, NSVMMBD352WT1G MMBD352WT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed


    Original
    MMBD101W/MMBD352W/MMBD354W/MMBD355W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2012-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 PDF

    MARKING M5

    Abstract: No abstract text available
    Text: MMBD352W Schottky Barrier Diodes SOT-323 Features — Very low capacitance-less than 1.0Pf @zero volts. — Low forward voltage-0.5 Voltage Typ. @IF=10mA. Applications — Dimensions in inches and (millimeters) For UHF mixer applications. Ordering Information


    Original
    MMBD352W OT-323 MMBD352W MARKING M5 PDF

    PBD 3511

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-323 Package Weight mg 6 Product Group Type No. MMBD352W RB706F-40, RB715F, RB717F BAS70W / AW / CW / SW 1SS372 MMBD717W / AW / CW / SW BAT54W / AW / CW / SW MMBD330 BAS40W / AW / CW / SW


    Original
    OT-323 MMBD352W RB706F-40, RB715F, RB717F BAS70W 1SS372 MMBD717W BAT54W MMBD330 PBD 3511 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD353W/MMBD354W/ MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Low V F : 0.5V (Typ) at IF=10mA .087(2.2) .078(2.0) Applications .004(.10)MIN.


    Original
    MMBD101W/MMBD352W/MMBD353W/MMBD354W/ MMBD355W OT-323 OT-323, MIL-STD-750, PDF

    MMBD352WT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBD352WT1/D SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.


    Original
    MMBD352WT1/D MMBD352WT1 MMBD352WT1 PDF

    onsemi 035 diode

    Abstract: MMBD352WT1 MMBD352WT1G
    Text: MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features http://onsemi.com • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 MMBD352WT1/D onsemi 035 diode MMBD352WT1 MMBD352WT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD352W SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability


    Original
    MMBD352W OT-323, MIL-STD-202, PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original
    M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212 PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original
    OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original
    SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original
    5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ual Sch o ttk y Barrier Diode MMBD352W T1 These devices are designed primarily for U H F mixer applications but are suitable also for use in detector and ultra-fast switching circuits. • Very Low Capacitance — L ess Than 1.0 pF @ Zero Volts


    OCR Scan
    MMBD352W MMBD352WT1 OT-323 MMBD352WT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky B arrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    OCR Scan
    b3b72SS BD352W PDF