Untitled
Abstract: No abstract text available
Text: Product specification RB451F Features Small surface mounting type. UMD3 Low VF. (VF=0.45V Typ. at 100mA) High reliability. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r P e a k re v e rs e v o lta g e S ym bol L im its U n it VRM 40 V
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RB451F
100mA)
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0928u
Abstract: RB451F
Text: RB451F Diodes Shottky barrier diode RB451F zApplication Low current rectification zExternal dimensions Unit : mm zLead size figure (Unit : mm) 1.3 2.0±0.2 0.15±0.05 0.65 0.9MIN. 各リードとも Each lead has same dimensions 同寸法 2.1±0.1 1.25±0.1
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RB451F
OT-323
SC-70
0928u
RB451F
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Untitled
Abstract: No abstract text available
Text: RB451F Diodes Shottky barrier diode RB451F zApplication Low current rectification zExternal dimensions Unit : mm zLead size figure (Unit : mm) 1.3 2.0±0.1 ＋0.1 0.25 －0.05 各リードとも Each lead has same dimension 同寸法 ＋0.1 0.15 －0.06
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RB451F
OT-323
SC-70
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RB451F
Abstract: No abstract text available
Text: RB451F Diodes Schottky barrier diode RB451F !External dimensions Units : mm 2.0±0.2 0.9±0.1 1.3±0.1 0.65 2.1±0.1 0.65 0.3 1.25±0.1 !Features 1) Small surface mounting type. (UMD3) 2) Low VF. (VF=0.45V Typ. at 100mA) 3) High reliability. 0~0.1 0.15±0.05
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RB451F
100mA)
RB451F
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RB451F
Abstract: 13221
Text: REFERENCE 28-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB451F No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI
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28-Aug-06
RB451F
215E-07
182E-11
000E-05
656E-09
RB451F
13221
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Untitled
Abstract: No abstract text available
Text: Data Sheet Schottky Barrier Diode RB451F Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) 2.0±0.2 0.3± 0.1 Each lead has same dimensions 0.15± 0.05 1.25±0.1 Features 1) Small mold type. (UMD3) 2) Low VF
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RB451F
100mA
R1120A
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diode
Abstract: SCHOTTKY "Schottky Barrier Diodes" diodes schottky barrier diode Schottky Diode RB451F
Text: Diodes Schottky barrier diode RB451F FApplications Low power rectification FExternal dimensions Units: mm Schottky barrier diodes FFeatures 1)ăSmall surface mounting type. (UMD3) 2)ăHigh reliability. 3)ăLow reverse current and low forward voltage. Small signals
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RB451F
diode
SCHOTTKY
"Schottky Barrier Diodes"
diodes
schottky barrier diode
Schottky Diode
RB451F
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Untitled
Abstract: No abstract text available
Text: Data Sheet Schottky Barrier Diode RB451F Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) 1.3 2.0±0.2 0.15± 0.05 0.9MIN. 0.65 1.25±0.1 2.1±0.1 (3) Features 1) Small mold type. (UMD3) 2) Low VF 3) High reliability.
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RB451F
OT-323
SC-70
R1120A
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DIODE MARKING smd
Abstract: marking 34 RB451F marking 3C
Text: Diodes SMD Type Schottky barrier diode RB451F Features Small surface mounting type. UMD3 Low VF. (VF=0.45V Typ. at 100mA) High reliability. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r P e a k re v e rs e v o lta g e S ym bol L im its
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RB451F
100mA)
DIODE MARKING smd
marking 34
RB451F
marking 3C
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RB451F
Abstract: No abstract text available
Text: RB451F Diodes Schottky barrier diode RB451F !External dimensions Units : mm 2.0±0.2 0.9±0.1 1.3±0.1 0.65 2.1±0.1 0.65 0.3 1.25±0.1 !Features 1) Small surface mounting type. (UMD3) 2) Low VF. (VF=0.45V Typ. at 100mA) 3) High reliability. 0~0.1 0.15±0.05
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RB451F
100mA)
RB451F
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Untitled
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Schottky Barrier Diode RB451FFH Applications Low current rectification Land size figure Unit : mm Dimensions (Unit : mm) 1.3 2.0±0.2 0.15± 0.05 0.9MIN. 0.65 1.25±0.1 2.1±0.1 (3) Features 1) Small mold type. (UMD3)
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AEC-Q101
RB451FFH
OT-323
SC-70
R1120A
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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Untitled
Abstract: No abstract text available
Text: Diodes Schottky barrier diode RB425D / RB421D FApplications Low power rectification FExternal dimensions Units: mm Schottky barrier diodes FFeatures 1) Small surface mounting type. (SMD3) 2) High reliability. 3)ăLow reverse current and low forward voltage.
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RB425D
RB421D
RB451F
RB731U
RB751V
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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Untitled
Abstract: No abstract text available
Text: ^ RB451F — K/D iodes RB451F y IJ =l > I k°2 * v 7 M $ '> a "J V + - / * U 7 $ < * ~ K Silicon Epitaxial Schottky Barrier Diode • W K ifiilS I/D im e n s io n s U n it: mm 1) 5 - C - A b 2) / h M T '* 3 „ 3) 9 r^ ](o $ § j z C &-5 o 1) M in im old type
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RB451F
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Untitled
Abstract: No abstract text available
Text: Diodes Schottky Barrier Diode RB451F •A pplications Low power rectification •E x te rn a l dimensions Units: mm Schottky barrier d iodes •F e a tu re s 1)Designed for mounting on small surface areas (UMD3) 2) High reliability Smoli signals • ■ ■
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RB451F
100mA
c100//
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ROHM RB451F
Abstract: No abstract text available
Text: RB451F is — K / D io d e s RB451F "J t — K S ilic o n E pitaxial S ch o ttk y Barrier D io d e s • 1 Dim ensions Unit : mm) (U M D )o 2} iWiiaflT'ifo 5 o • Fe atures 1) S m all su rface mount type (UMD). 2) H igh reliability. • ffliÊ • A p p lica tio n s
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RB451F
ROHM RB451F
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Untitled
Abstract: No abstract text available
Text: RB451F Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Dimensions U n its: mm 20 +02 Features • available in UMD3 (UMD, SC-70, SOT-323) package • part marking, 3C
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RB451F
SC-70,
OT-323)
RB451F
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Diodes smd f5
Abstract: RB751H
Text: Schottky Barrier Diodes lo = 1 A to 0.1 A, single or array, low V f, or low leakage. # F o r Rectifier Absolute maximum ratings Ta* 2 5 * 0 Part No. Vrm (V (V) « lo (A) Vr ^ I fsm (A) 60Hz • 1 ^ Tj (°c) Tstg VF (V CO * Electrical characteristics (Ta = 25°C )
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RB035B-40
RB031B-40
RB160L-40
RB110C
RB111C
RB401D
RB435C
RB400D
RB731U
RB751H-40
Diodes smd f5
RB751H
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RB100A
Abstract: RB110
Text: Schottky barrier diodes Schottky barrier diodes summary Peak reverse voltage V HM V Reverse voltage RB160L-40 RB110C Part num ber Peak forward surge current 1 cycle @ 60 Hz V r (V) Mean rectifying current lo (A) 40 40 1.0 40 25 1.0 Forward voltage Package
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RB160L-40
RB110C
RB401D
RB435C
RB400D
RB411D
RB420D
RB421D
RB425D
RB450F
RB100A
RB110
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R8715F
Abstract: RD7M RB435 SE163 RB111 RB-601 RB110C T100 RB4200
Text: Schottky Barrier Diodes lo=1A to 0.1 A, single or array, low V f, or low leakage. •F o r Rectifier Absolute maximum ratings Ta ” 25*C Vhm (V) Vr (V) Mio (A) &RB035B-40 40 40 R8031B-40 40 40 r RB160L-40 40 RB110C Part No. ’ ' Packge Circuits - 4 0 — + 125
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RB035B-40
5533I--
R8715F
RD7M
RB435
SE163
RB111
RB-601
RB110C T100
RB4200
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diode zener mtz 107
Abstract: INS400 zener UMZ te-146
Text: Diodes Table of Characteristics Table of Characteristics Small signal diodes •Switching diodes These are switching diodes with outstanding supply capability and high reliability, of which Rohm is especially proud. With the UMD2 package, in particular, superb surge characteristics are obtained despite the compact size of the package. I n
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T1SS400
DAN222
DAP222
DA221
1SS355
DAN202U
DAP202U
DA204U
DA114
DA227
diode zener mtz 107
INS400
zener UMZ
te-146
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