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    RAYTHEON RF COMPONENTS Search Results

    RAYTHEON RF COMPONENTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    RAYTHEON RF COMPONENTS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RAYTHEON

    Abstract: OC768 RMLA00400 transimpedance amplifier 10 GHz
    Text: RMLA00400 40 Gb/s Transimpedance Amplifier ADVANCED INFORMATION Description Features The Raytheon RF Components RMLA00400 is a very high speed Transimpedance Amplifier TIA MMIC for 40 Gb/s (OC768) fiber optic systems. It is available in die form, and is manufactured using Raytheon RF Components


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    RMLA00400 RMLA00400 OC768) 450mW. RAYTHEON OC768 transimpedance amplifier 10 GHz PDF

    RMBA09501

    Abstract: RMBA09501-58 2 Watt rf Amplifier grm39 fr4 metal slug
    Text: RF Components RMBA09501-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09501-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF


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    RMBA09501-58 RMBA09501 2 Watt rf Amplifier grm39 fr4 metal slug PDF

    RAYTHEON

    Abstract: RMDA20420 80Au multiplier mmic
    Text: RF Components RMDA20420 20-42 GHz General Purpose MMIC Amplifier ADVANCED INFORMATION Description Features The Raytheon RF Components RMDA20420 is a broadband general purpose driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS, SatCom and


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    RMDA20420 RMDA20420 10GHz) 30GHz 39GHz, 30GHz 21GHz 39GHz RAYTHEON 80Au multiplier mmic PDF

    RAYTHEON

    Abstract: RMLA3565A-58 RO4003
    Text: RF Components RMLA3565A-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description The Raytheon RF Components RMLA3565A-58 is a single bias wideband low noise MMIC amplifier designed for the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits or


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    RMLA3565A-58 RMLA3565A-58 RAYTHEON RO4003 PDF

    RAYTHEON

    Abstract: PCS1900 RMBA19500-58 RMBA19500A RMBA19500A-58 RCI-0603-1101J
    Text: RF Components RMBA19500A-58 PCS1900 2 Watt GaAs MMIC Power Amplifier PRODUCT INFORMATION The RMBA19500A-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF Description Components’ pHEMT process. It has been designed for use as a driver stage for PCS1900 base


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    RMBA19500A-58 PCS1900 RMBA19500A-58 RMBA19500A RAYTHEON RMBA19500-58 RCI-0603-1101J PDF

    RAYTHEON

    Abstract: RMLA3565-58 RO4003
    Text: RF Components RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description Features The Raytheon RF Components RMLA3565-58 is a single bias wideband low noise MMIC amplifier designed for the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits or


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    RMLA3565-58 RMLA3565-58 RAYTHEON RO4003 PDF

    circuit diagram of 4 channel long range RF based

    Abstract: circuit diagram of 8 channel long range RF based raytheon gaas 6.0-18.0 GHz mmic RAYTHEON rmpa61810 copper bond wire
    Text: RF Components RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Raytheon RF Components RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility


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    RMPA61810 RMPA61810 600mA circuit diagram of 4 channel long range RF based circuit diagram of 8 channel long range RF based raytheon gaas 6.0-18.0 GHz mmic RAYTHEON copper bond wire PDF

    GRM36COG101J50

    Abstract: RMBA09501-58 RMBA09501A RMBA09501A-58 ba095 GRM39Y5V104Z50 grm39
    Text: RF Components RMBA09501A-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09501A is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon


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    RMBA09501A-58 RMBA09501A GRM36COG101J50 RMBA09501-58 ba095 GRM39Y5V104Z50 grm39 PDF

    RCI-0402-10R0J

    Abstract: RAYTHEON RMBA09500-58 grm39 GRM36COG8R2B50 OIP35 grm36cog101j50
    Text: RF Components RMBA09500-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon


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    RMBA09500-58 RMBA09500 RMBA09500-58-TB, G657471) RMBA09500-58) G657471 RCI-0402-10R0J RAYTHEON grm39 GRM36COG8R2B50 OIP35 grm36cog101j50 PDF

    oc-192 modulator

    Abstract: RAYTHEON DC-20 RMDA00100 oc 192 modulator
    Text: RMDA00100 OC-192 Modulator Driver MMIC ADVANCED INFORMATION Description The Raytheon RF Components RMDA00100 is a medium power broadband amplifier MMIC suitable as a driver for external optical modulators for OC-192 fiber optic systems. It is available in


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    RMDA00100 OC-192 RMDA00100 DC-20 26dBm oc-192 modulator RAYTHEON oc 192 modulator PDF

    RAYTHEON

    Abstract: RMPA2550-252 54Mbps IC155
    Text: Raytheon RMPA2550-252 RF Components 2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Absolute Ratings1 The RMPA2550-252 is a dual frequency band power amplifier designed for high performance WLAN


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    RMPA2550-252 RMPA2550-252 10dBm 16dBm 20dBm 14dBm 17dBm 21dBm 24dBm RAYTHEON 54Mbps IC155 PDF

    RCI-0603-1001J

    Abstract: GRM39COG100J050AD RAYTHEON RMBA19500 RMBA19500-58 2 Watt rf Amplifier RCI-0603-20R0J
    Text: RF Components RMBA19500-58 - PCS 2 Watt Linear GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA19500 is a highly linear Power Amplifier. The circuit uses Raytheon RF Components’ pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output


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    RMBA19500-58 RMBA19500 RCI-0603-1001J GRM39COG100J050AD RAYTHEON 2 Watt rf Amplifier RCI-0603-20R0J PDF

    DA2900

    Abstract: RAYTHEON Power Amplifier MMIC 2.6 GHz DA29000
    Text: # 425430398 RMDA29000 27-31 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RF Components RMDA29000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications.


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    RMDA29000 RMDA29000 250mA DA2900 RAYTHEON Power Amplifier MMIC 2.6 GHz DA29000 PDF

    raytheon mhemt

    Abstract: RAYTHEON RMLA31400 T25C6
    Text: Raytheon RF Components RMLA31400 31-40 GHz Low Noise Amplifier MMIC ADVANCED INFORMATION Description The RMLA31400 is a 3-stage GaAs Low Noise MMIC Amplifier designed for operation from 31 to 40 GHz. The amplifier operates on a single positive supply voltage and is ideal for low noise


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    RMLA31400 RMLA31400 raytheon mhemt RAYTHEON T25C6 PDF

    long range gold detector circuit diagram

    Abstract: gold detector circuit diagram RMPA39300 RAYTHEON gold detector circuit
    Text: Raytheon RMPA39300 RF Components 37-40 GHz 2 Watt Power Amplifier MMIC ADVANCED INFORMATION Description Features The RMPA39300 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, and other millimeter wave applications. The RMPA39300 is a three stage


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    RMPA39300 RMPA39300 long range gold detector circuit diagram gold detector circuit diagram RAYTHEON gold detector circuit PDF

    RAYTHEON

    Abstract: RMWL26001 RMWM26001 26 GHz mixer
    Text: RMWM26001 26 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM26001 is a 26 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon RF


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    RMWM26001 RMWM26001 RMWL26001 RAYTHEON 26 GHz mixer PDF

    RMLA18250

    Abstract: id46 raytheon mhemt 2574 transistor
    Text: Raytheon RF Components RMLA18250 18-25 GHz Low Noise Amplifier MMIC ADVANCED INFORMATION Description Features The RMLA18250 is a 3-stage GaAs Low Noise MMIC Amplifier designed for operation from 18 to 25 GHz. The amplifier operates with a +1V positive supply voltage and is ideal for low noise applications


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    RMLA18250 RMLA18250 id46 raytheon mhemt 2574 transistor PDF

    RAYTHEON

    Abstract: RMPA29400 2 Watt rf Amplifier power amplifier mmic
    Text: Raytheon RMPA29400 RF Components 27-32 GHz 2.8 Watt Power Amplifier MMIC ADVANCED INFORMATION Description Features Electrical Characteristics At 25°C 50 Ω system, Vd=+5 V, Quiescent current (Idq) = 1.6 A The RMPA29400 is a high efficiency power amplifier designed for use in point to point radio, point to


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    RMPA29400 RMPA29400 RAYTHEON 2 Watt rf Amplifier power amplifier mmic PDF

    RAYTHEON

    Abstract: 50W 4 GHz linear power amplifier
    Text: # 425430398 Description Features Absolute Ratings Electrical Characteristics1 RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Raytheon RF ComponentsRMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The


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    RMPA2451-58 RMPA2451-58 RAYTHEON 50W 4 GHz linear power amplifier PDF

    LLV1005FB10NJ

    Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
    Text: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with


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    RMPA5251-251 RMPA5251-251 LLV1005FB10NJ RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 grm39 PDF

    CDMA2000-1X

    Abstract: RAYTHEON RMPA1956-103
    Text: RMPA1956-103 - 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module RF Components PRODUCT INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands.


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    RMPA1956-103 CDMA2000-1X RAYTHEON PDF

    pin configuration of 8251

    Abstract: C17-C19 PA1900 RMPA1901-53 MURATA MW
    Text: RMPA1901-53 PCS CDMA GaAs MMIC Power Amplifier Description Features The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance parameters may be slightly adjusted by “tweaking” the off-chip matching components. The amplifier circuit design


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    RMPA1901-53 RMPA1901-53 pin configuration of 8251 C17-C19 PA1900 MURATA MW PDF

    RAYTHEON

    Abstract: CDMA2000-1X RMPA1953-103 RAYTHEON INC, INTERFACE ACPR24
    Text: RMPA1953-103 3V PCS CDMA & CDMA2000 Power Amplifier Module with Digital Bias Control ADVANCED INFORMATION Description Features The RMPA1953-103 is a power amplifier for CDMA and CDMA2000-1X personal communications system PCS applications. The PA is internally matched to 50 ohms to minimize the use of external components. Advanced DC


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    RMPA1953-103 CDMA2000 RMPA1953-103 CDMA2000-1X RAYTHEON RAYTHEON INC, INTERFACE ACPR24 PDF

    Untitled

    Abstract: No abstract text available
    Text: Raytheon Electronics Œ « â » Description The Raytheon RMLA12000-70 is a 2 stage GaAs MMIC PHEMT LNA for use in Direct Broadcast Satellite DBS and phased array front end applications. This device is particularly useful for Twin and Quattro LNB applications requiring low noise RF input amplification while minimizing


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    RMLA12000-70 PDF