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    EVM7

    Abstract: No abstract text available
    Text: RMPA5251 4.90–5.85 GHz InGaP HBT Linear Power Amplifier General Description Features The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and


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    PDF RMPA5251 RMPA5251 26dBm EVM7

    Inductor 0.5 nH

    Abstract: No abstract text available
    Text: LLV1005FB Series NON-POLARITY CERAMIC CHIP INDUCTOR DESCRIPTION TOKO’s LLV1005FB Series is a multilayer ceramic chip inductor with no requirements for magnetic polarity orientation and very high self-resonant frequency characteristics. This inductor series has lead-free internals


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    PDF LLV1005FB 250ppm/ LLV1005curate 800-PIK-TOKO CF-215-LLV1005 Inductor 0.5 nH

    RCI-0402

    Abstract: 802.11a Amplifier ofdm amplifier bipolar transistor ghz s-parameter GRM1885C1H101JA01D GRM21BR60J106K LLV1005FB10NJ LLV1005FB15NJ RMPA5251
    Text: RMPA5251 4.90–5.85 GHz InGaP HBT Linear Power Amplifier General Description • 2.5% EVM at 18.0dBm modulated power out The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3


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    PDF RMPA5251 RMPA5251 RCI-0402 802.11a Amplifier ofdm amplifier bipolar transistor ghz s-parameter GRM1885C1H101JA01D GRM21BR60J106K LLV1005FB10NJ LLV1005FB15NJ

    LLV1005FB10NJ

    Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
    Text: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with


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    PDF RMPA5251-251 RMPA5251-251 LLV1005FB10NJ RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 grm39

    Untitled

    Abstract: No abstract text available
    Text: RMPA5251 4.90–5.85 GHz InGaP HBT Linear Power Amplifier General Description • 2.5% EVM at 18.0dBm modulated power out The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3


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    PDF RMPA5251 RMPA5251

    2-20GHZ

    Abstract: AGILENT 16092a
    Text: Multilayer Chip Inductors 積層チップインダクタ LLV1005-FB Series Inductance Range: 1.0~200nH Temperature Coefficient of L: + 250ppm/°C for reference only FEATURES/特長 • High SRF (More than twice: Compared with Toko’s conventional 1005 model)


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    PDF LLV1005-FB 200nH 250ppm/ SRF21005 LL1608FSLL2012FHLLP1608FLLP2012F LL1005FHLLP1005FHLLV0603FBLLV1005FB use040040 range-40100 LL1005FHLLP1005FHLLV0603FBLLV1005FB 2-20GHZ AGILENT 16092a

    LLV1005-FBR10J

    Abstract: No abstract text available
    Text: 4 TYPE Multilayer Chip Inductors LLV1005FB Meeting Your Needs L The LLV1005-FB Series is a multilayer ceramic chip inductor in an EIA standard 0402 footprint with very high self-resonant frequency characteristics and no requirements for magnetic polarity orientation.


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    PDF LLV1005FB LLV1005-FB 0-100nH 100MHz 800MHz 1800MHz) 250ppm/ availa20% 291A/B 16196B) LLV1005-FBR10J